Patents by Inventor Shu Tao Chen

Shu Tao Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure
    Patent number: 11955397
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: April 9, 2024
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Shin-Cheng Lin, Cheng-Wei Chou, Ting-En Hsieh, Yi-Han Huang, Kwang-Ming Lin, Yung-Fong Lin, Cheng-Tao Chou, Chi-Fu Lee, Chia-Lin Chen, Shu-Wen Chang
  • Nitrate salt-based process for manufacture of graphite oxide
    Patent number: 8691174
    Abstract: The present invention relates to a nitrate salt-based process for preparing a graphite oxide. The invention nitrate salt-based process employs starting materials comprising a sulfuric acid, an inorganic nitrate salt, an amount of water, a first amount of chlorate salt, and a graphite.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: April 8, 2014
    Assignee: Dow Global Technologies LLC
    Inventors: Shu Tao Chen, Michael S. Paquette, Mary A. Leugers
  • Process for manufacture of graphite oxide with purge of chlorine dioxide
    Patent number: 8486302
    Abstract: The present invention relates to a process for preparing a graphite oxide while purging chlorine dioxide. The invention process employs starting materials comprising a sulfuric acid, a nitric acid, a chlorate salt, and a graphite and further employs an inert purge gas.
    Type: Grant
    Filed: January 19, 2010
    Date of Patent: July 16, 2013
    Inventors: Michael S. Paquette, Thomas D. Gregory, Shu Tao Chen
  • Highly efficient process for manufacture of exfoliated graphene
    Patent number: 8246856
    Abstract: A process for preparing oxidized graphite that provides exfoliated graphene, preferably with high surface area. The process uses considerably less chlorate than previously known systems.
    Type: Grant
    Filed: July 28, 2008
    Date of Patent: August 21, 2012
    Assignee: Dow Global Technologies LLC
    Inventors: Mary Anne Leugers, Brian C. Nickless, Michael S. Paquette, Robert C. Cieslinski, Shu Tao Chen
  • NITRATE SALT-BASED PROCESS FOR MANUFACTURE OF GRAPHITE OXIDE
    Publication number: 20110280787
    Abstract: The present invention relates to a nitrate salt-based process for preparing a graphite oxide. The invention nitrate salt-based process employs starting materials comprising a sulfuric acid, an inorganic nitrate salt, an amount of water, a first amount of chlorate salt, and a graphite.
    Type: Application
    Filed: January 19, 2010
    Publication date: November 17, 2011
    Inventors: Shu Tao Chen, Michael S. Paquette, Mary A. Leugers
  • PROCESS FOR MANUFACTURE OF GRAPHITE OXIDE WITH PURGE OF CHLORINE DIOXIDE
    Publication number: 20110274610
    Abstract: The present invention relates to a process for preparing a graphite oxide while purging chlorine dioxide. The invention process employs starting materials comprising a sulfuric acid, a nitric acid, a chlorate salt, and a graphite and further employs an inert purge gas.
    Type: Application
    Filed: January 19, 2010
    Publication date: November 10, 2011
    Inventors: Michael S. Paquette, Thomas D. Gregory, Shu Tao Chen
  • HIGHLY EFFICIENT PROCESS FOR MANUFACTURE OF EXFOLIATED GRAPHENE
    Publication number: 20110014111
    Abstract: A process for preparing oxidized graphite that provides exfoliated graphene, preferably with high surface area. The process uses considerably less chlorate than previously known systems.
    Type: Application
    Filed: July 28, 2008
    Publication date: January 20, 2011
    Inventors: Mary Anne Leugers, Brian C. Nickles, Michael S. Paquette, Robert C. Cieslinski, Shu Tao Chen