Patents by Inventor Shu Tsai Wang

Shu Tsai Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gap fill using carbon-based films
    Patent number: 11049716
    Abstract: Provided herein are methods of filling gaps using high density plasma chemical vapor deposition (HDP CVD). According to various implementations, carbon-containing films such as amorphous carbon and amorphous carbide films are deposited by HDP CVD into gaps on substrates to fill the gaps. The methods may involve using high hydrogen-content process gasses during HDP CVD deposition to provide bottom-up fill. Also provided are related apparatus.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: June 29, 2021
    Assignee: Lam Research Corporation
    Inventors: Wei Tang, Jason Daejin Park, Bart J. van Schravendijk, Shu Tsai Wang, Kaihan Abidi Ashtiani
  • GAP FILL USING CARBON-BASED FILMS
    Publication number: 20190181004
    Abstract: Provided herein are methods of filling gaps using high density plasma chemical vapor deposition (HDP CVD). According to various implementations, carbon-containing films such as amorphous carbon and amorphous carbide films are deposited by HDP CVD into gaps on substrates to fill the gaps. The methods may involve using high hydrogen-content process gasses during HDP CVD deposition to provide bottom-up fill. Also provided are related apparatus.
    Type: Application
    Filed: November 16, 2018
    Publication date: June 13, 2019
    Inventors: Wei Tang, Jason Daejin Park, Bart J. van Schravendijk, Shu Tsai Wang, Kaihan Abidi Ashtiani
  • GAP FILL USING CARBON-BASED FILMS
    Publication number: 20160314964
    Abstract: Provided herein are methods of filling gaps using high density plasma chemical vapor deposition (HDP CVD). According to various implementations, carbon-containing films such as amorphous carbon and amorphous carbide films are deposited by HDP CVD into gaps on substrates to fill the gaps. The methods may involve using high hydrogen-content process gasses during HDP CVD deposition to provide bottom-up fill. Also provided are related apparatus.
    Type: Application
    Filed: April 21, 2015
    Publication date: October 27, 2016
    Inventors: Wei Tang, Jason Daejin Park, Bart J. van Schravendijk, Shu Tsai Wang, Kaihan Abidi Ashtiani
  • Salsa clean process
    Patent number: 6340395
    Abstract: A wet spray cleaning process for removing thick organic layers including hardened photoresist from the surface of silicon wafers yields low residual particle counts for photoresist thicknesses up to 3 microns, and maintains low residual particle density for oxide-covered wafer regions. The cleaning process uses multiple cycles of SPM/DI/APM/DI, without an intervening drying step therebetween.
    Type: Grant
    Filed: March 16, 2000
    Date of Patent: January 22, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Jacques Bertrand, Barry Dick, Shu Tsai Wang, Weiwen Ou, Lynne A. Okada, Yen C. Chu