Abstract: The present disclosure relates to a solvent-containing dry film and a method for applying a dry film on a substrate. The dry film includes a carrier and a resin layer. The resin layer contains a resin composition and a solvent and the solvent is present in a total amount of at least 5 wt % based on the total weight of the resin layer. The dry film of the present invention can be applied onto a substrate without the use of a prior art vacuum lamination apparatus. The application process is simple and is more cost-efficient than the prior art techniques.

Abstract: The present disclosure relates to a solvent-containing dry film and a method for applying a dry film on a substrate. The dry film includes a carrier and a resin layer. The resin layer contains a resin composition and a solvent and the solvent is present in a total amount of at least 5 wt % based on the total weight of the resin layer. The dry film of the present invention can be applied onto a substrate without the use of a prior art vacuum lamination apparatus. The application process is simple and is more cost-efficient than the prior art techniques.

Abstract: A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)4-x to allow the silica moiety to carry a photo-polymerizable unsaturated group; adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9 and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4?x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: A package structure for a multi-chip integrated circuit (IC) is disclosed and the structure includes substrate having a position for bonding with chips for chip-bonding and having at least a hole for the passage of a gold wire in the course of wire-bonding, a first chip attached to the substrate with a chip bonding agent and being wire-bonded on the substrate and the chip bonding position being opposite to the 2nd chip with the substrate in-between, and the gold wire of the wire-bonding passed through the hole of the substrate from the substrate bonding pad at the substrate and on the same lateral side of the second chip and being connected to the pin pad of the first chip, at least a second chip being flip-chip bonded onto the substrate and the bonding position being at different sides of the bonding between the substrate and the first chip, and a package body including filler of the second chip extended to cover the hole of the substrate and the first chip and the gold wire connected to the substrate and th

Abstract: A fabrication method for solder bump pattern of rear section wafer package is disclosed and the method includes the steps of: (a) pattern-etching the wafer at a passivation layer for the positioning of the solder bump; (b) depositing the entire under bump metal layer,

Abstract: A method of wire bonding of a semiconductor device for resolving oxidation of copper bonding pad is disclosed. The method comprises the steps of exposing the copper bonding pad of a wafer which has been completed with semiconductor circuit fabrication; covering the copper bonding pad of the wafer with a protective anti-oxidization film which will be vaporized when heated; performing wire bonding directly without requiring the removal of the protective film, employing ultrasonic vibration energy, pressurizing deformation energy and heat energy in the course of bonding to vaporize the protective film so that the metal wire and the copper pad form a large area intermetallic compound layer for bonding.

Abstract: An open-typed multi-chip stack-packaging is disclosed and the packaging comprises a substrate having a first surface and a second surface, at least a through opening formed on the substrate, and including at least two layers of circuitry to electrically transmit signals; at least a first chip positioned on the upper section of the opening of the first surface and a plurality of protruded blocks being soldered onto the circuitry on the first surface of the substrate at the external region of the substrate for electrically connection; at least a second chip stacked onto the first chip and the second chip being connected electrically to the circuitry of the first surface with gold lines; at least a third chip positioned at the lower section of the opening of the second surface and having a size smaller than the first chip, and a plurality of protruded blocks being used to electrically bond with the center position of the first chip, and adhesive being used to fill the first chip and the third chip, and the regio