Abstract: An organometallic complex, a catalyst composition employing the same, and a method for preparing polyolefin are provided. The organometallic compound has a structure represented by Formula (I) wherein M is Ti, Zr, or Hf; X is —O—, or —NR6—; R1 and R2 are independently hydrogen, C1-6 alkyl group, C6-12 aryl group, or R1 and R2 are combined with the carbon atoms, to which they are attached, to form an C6-12 aryl moiety; R3, R4 and R5 are independently fluoride, chloride, bromide, C1-6 alkyl group, C6-12 aryl group, C3-6 hetero aryl group, C7-13 aryl alkyl group or C7-12 alkyl aryl group; and R6 is hydrogen, C6-12 aryl group or C7-12 alkyl aryl group.

Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a first portion and a matrix structure. The first portion is connected to a first optical member and corresponds to a first light. The matrix structure is disposed on the first portion and corresponds to a second light, wherein the first light is different from the second light. The matrix structure includes a regularly-arranged structure.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An optical element driving mechanism includes a movable assembly, a fixed assembly, and a driving assembly. The movable assembly is configured to be connected to an optical element. The movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly in a range of motion. The optical element driving mechanism further includes a positioning assembly configured to position the movable assembly at a predetermined position relative to the fixed assembly when the driving assembly is not operating.

Abstract: A process tool including a polishing pad on a top surface of a wafer platen. A wafer carrier is configured to hold a wafer over the polishing pad. A slurry dispenser is configured to dispense an abrasive slurry including a plurality of charged abrasive particles having a first polarity onto the polishing pad. A first conductive rod is within the wafer platen and coupled to a first voltage supply. A wafer roller is configured to support the wafer. A first wafer brush is arranged beside the wafer roller. A second conductive rod is within the first wafer brush and coupled to a second voltage supply. The first voltage supply is configured to apply a first charge having a second polarity, opposite the first polarity, to the first conductive rod. The second voltage supply is configured to apply a second charge having the second polarity to the second conductive rod.

Abstract: In non-limiting examples of the present disclosure, systems, methods, and devices for matching device configurations to games are presented. A set of device configuration tiers may be generated from gameplay telemetry data generated by a plurality of client devices executing a plurality of games. A device configuration for a specific client device may be determined based at least on the specific client device's GUI type. When the specific client device accesses a software game library a determination may be made based on a performance tier corresponding to the device configuration for the specific client device as to whether the specific client device can adequately execute each game. One or more recommendations may be rendered and displayed in the game library based on the determination of whether the specific client device can adequately execute each game.

Abstract: A current sensing module includes a shunt resistor for receiving and sensing a current, a digital sensing circuit, and an analog sensing circuit. The shunt resistor includes a connecting part, a first resistive part and a second resistive part coupled in series to the first resistive part via the connecting part. The digital sensing circuit is coupled to the first resistive part for measuring a first analog voltage of the first resistive part when the current flows through the first resistive part, and providing a first digital measuring value associated with the first analog voltage. The analog sensing circuit is coupled to the second resistive part for measuring a second analog voltage of the second resistive part when the current flows through the second resistive part, and providing a second analog measuring value associated with the second analog voltage.

Abstract: In non-limiting examples of the present disclosure, systems, methods, and devices for matching device configurations to games are presented. A set of device configuration tiers may be generated from gameplay telemetry data generated by a plurality of client devices executing a plurality of games. A device configuration for a specific client device may be determined based at least on the specific client device's GUI type. When the specific client device accesses a software game library a determination may be made based on a performance tier corresponding to the device configuration for the specific client device as to whether the specific client device can adequately execute each game. One or more recommendations may be rendered and displayed in the game library based on the determination of whether the specific client device can adequately execute each game.

Abstract: In non-limiting examples of the present disclosure, systems, methods, and devices for matching device configurations to games are presented. A set of device configuration tiers may be generated from gameplay telemetry data generated by a plurality of client devices executing a plurality of games. A device configuration for a specific client device may be determined based at least on the specific client device's GUI type. When the specific client device accesses a software game library a determination may be made based on a performance tier corresponding to the device configuration for the specific client device as to whether the specific client device can adequately execute each game. One or more recommendations may be rendered and displayed in the game library based on the determination of whether the specific client device can adequately execute each game.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.

Abstract: A cryptographic key of a first instance of a group of one or more cloud nodes providing a service is managed. A request to share the cryptographic key with a second instance of a different group of one or more cloud nodes is received. A determination is made whether the second instance is allowed to access the cryptographic key. In response to a determination that the second instance is allowed to access the cryptographic key, the cryptographic key is encrypted with a target key of the second instance and the encrypted cryptographic key is signed using a cryptographic signature of the first instance. The signed encrypted cryptographic key is provided to the second instance.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.

Abstract: A cryptographic key of a first instance of a group of one or more cloud nodes providing a service is managed. A request to share the cryptographic key with a second instance of a different group of one or more cloud nodes is received. A determination is made whether the second instance is allowed to access the cryptographic key. In response to a determination that the second instance is allowed to access the cryptographic key, the cryptographic key is encrypted with a target key of the second instance and the encrypted cryptographic key is signed using a cryptographic signature of the first instance. The signed encrypted cryptographic key is provided to the second instance.

Abstract: An electronic device is provided. The electronic device includes a first signal line and a second signal line. The first signal line is arranged in the electronic device, and the first signal line at least includes a first section. The second signal line is arranged adjacent to the first signal line, and the second signal line at least includes a second section. An extension direction of the first section is different than an extension direction of the second section. From the top view of the electronic device, the second section is crossed with the first section.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.

Abstract: Examples described herein generally relate to detecting potential issues in video processing. For each of multiple instances of time over a time period, a set of values corresponding to different performance metrics related to video processing can be obtained. A data structure can be generated to include the set of values. The data structure can be compared to a set of data structures in a convolutional neural network (CNN) model. Based on comparing the data structure to the set of data structures, it can be determined whether the set of values represent a potential issue in video processing or not.

Abstract: A semiconductor structure includes a semiconductor substrate, a buried layer, a pair of first well regions, a second well region, a body doped region, and a first heavily doped region. The semiconductor substrate has a first conductivity type. The buried layer is disposed on the semiconductor substrate. The first well regions having the second conductivity type are disposed on the buried layer. The second well region having the first conductivity type is disposed between the first well regions. The body doped region having the first conductivity type is disposed in the second well region. The first heavily doped region having the first conductivity type is disposed in the body doped region. From a top view, the first heavily doped region and the first well regions extend in a first direction, and the first heavily doped region extends beyond the opposite edges of the first well regions.

Abstract: A semiconductor device includes a semiconductor substrate, a buried layer disposed in the semiconductor substrate, and a first well region, a second well region, a third well region and a fourth well region disposed in the semiconductor substrate on the buried layer. The semiconductor device also includes a source region disposed in the second well region, a drain region disposed in the first well region, a gate structure disposed on the first well region and the second well region, and a deep trench isolation structure disposed in the semiconductor substrate and surrounding the source region and the drain region. The second well region surrounds the first well region. The third well region and the fourth well region are located on opposite sides of the second well region. The deep trench isolation structure penetrates through the buried layer.

Abstract: A capacitor structure includes a first electrode plate disposed on a substrate, a first capacitor dielectric layer disposed on the first electrode plate, and a second electrode plate disposed on the first capacitor dielectric layer. A portion of the first electrode plate extends beyond an end of the second electrode plate to form a step. The capacitor structure also includes an etching stop layer, an inter-metal dielectric layer, a first via and a second via. The etching stop layer is disposed on the second electrode plate. The inter-metal dielectric layer covers the etching stop layer, the second electrode plate, the first capacitor dielectric layer and the first electrode plate. The first via penetrates through the inter-metal dielectric layer to contact the first electrode plate at the portion extending beyond the second electrode plate. The second via penetrates through the inter-metal dielectric layer to contact the second electrode plate.

Abstract: An electronic device is provided. The electronic device includes a first signal line and a second signal line. The first signal line is arranged in the electronic device, and the first signal line at least includes a first section. The second signal line is arranged adjacent to the first signal line, and the second signal line at least includes a second section. An extension direction of the first section is different than an extension direction of the second section. From the top view of the electronic device, the second section is crossed with the first section.