Patents by Inventor Shu-Wei Vanessa Chung

Shu-Wei Vanessa Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High voltage device with reduced leakage
    Patent number: 8951872
    Abstract: A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first type of conductivity, a lightly doped region formed in the substrate and aligned with a side of the gate structure, the lightly doped region having the first type of conductivity, and a barrier region formed in the substrate and adjacent the drain. The barrier region is formed by doping a dopant of a second type of conductivity different from the first type of conductivity.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: February 10, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shu-Wei Vanessa Chung, Kuo-Feng Yu
  • High Voltage Device with Reduced Leakage
    Publication number: 20140179080
    Abstract: A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first type of conductivity, a lightly doped region formed in the substrate and aligned with a side of the gate structure, the lightly doped region having the first type of conductivity, and a barrier region formed in the substrate and adjacent the drain. The barrier region is formed by doping a dopant of a second type of conductivity different from the first type of conductivity.
    Type: Application
    Filed: February 27, 2014
    Publication date: June 26, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Wei Vanessa Chung, Kuo-Feng Yu
  • High voltage device with reduced leakage
    Patent number: 8664719
    Abstract: A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first type of conductivity, a lightly doped region formed in the substrate and aligned with a side of the gate structure, the lightly doped region having the first type of conductivity, and a barrier region formed in the substrate and adjacent the drain. The barrier region is formed by doping a dopant of a second type of conductivity different from the first type of conductivity.
    Type: Grant
    Filed: January 7, 2013
    Date of Patent: March 4, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shu-Wei Vanessa Chung, Kuo-Feng Yu
  • High voltage device with reduced leakage
    Patent number: 8350327
    Abstract: A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first type of conductivity, a lightly doped region formed in the substrate and aligned with a side of the gate structure, the lightly doped region having the first type of conductivity, and a barrier region formed in the substrate and adjacent the drain. The barrier region is formed by doping a dopant of a second type of conductivity different from the first type of conductivity.
    Type: Grant
    Filed: August 28, 2009
    Date of Patent: January 8, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shu-Wei Vanessa Chung, Kuo-Feng Yu
  • HIGH VOLTAGE DEVICE WITH REDUCED LEAKAGE
    Publication number: 20100052057
    Abstract: A semiconductor device is provided which includes a semiconductor substrate, a gate structure formed on the substrate, sidewall spacers formed on each side of the gate structure, a source and a drain formed in the substrate on either side of the gate structure, the source and drain having a first type of conductivity, a lightly doped region formed in the substrate and aligned with a side of the gate structure, the lightly doped region having the first type of conductivity, and a barrier region formed in the substrate and adjacent the drain. The barrier region is formed by doping a dopant of a second type of conductivity different from the first type of conductivity.
    Type: Application
    Filed: August 28, 2009
    Publication date: March 4, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Wei Vanessa Chung, Kuo-Feng Yu