Abstract: A chassis with built-in handles which do not add to dimensional clearance required for the chassis to be placed in a cavity includes a side plate, a mounting unit, and a handle. A mounting groove is defined on the side plate. The mounting unit is coupled to the side plate. The handle is partially clamped by the side plate and the mounting unit, and rotatably coupled with the side plate. By rotating the handle, the handle can be stored at least flush in the mounting groove.

Abstract: A locking assembly can lock a workpiece. The workpiece includes a locking hole. The locking assembly includes a housing, a movable component, and an unlocking handle. The movable component includes a sleeve, a pin, and an unlocking cover. The sleeve is mounted on the housing. The pin is accommodated in the sleeve, and a portion of the pin protrudes from the housing and accommodated in the locking hole. The unlocking cover is fixed to the pin. The unlocking handle is disposed between the unlocking cover and the sleeve. The unlocking cover can be pulled from a first direction to move the pin out of the locking hole; or the unlocking handle can be pulled from a second direction intersecting with the first direction, and the unlocking handle can abut against the unlocking cover to drive the pin to move out of the locking hole.

Abstract: A circuit check method and an electronic apparatus applicable to a to-be-tested circuit are provided. The to-be-tested circuit has one or more first nodes related to a gate voltage of one or more transistor devices and a plurality of second nodes. The circuit check method includes: setting endpoint voltages of a plurality of input interface ports of the to-be-tested circuit; obtaining a first node voltage of the first node according to a conduction path of the to-be-tested circuit and the gate voltage of the transistor device; obtaining a second node voltage of each second node according to the conduction path, the endpoint voltages, and the first node voltage; and performing circuit static check on the to-be-tested circuit by applying the first node voltage and the second node voltage.

Abstract: A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.

Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.

Abstract: A vinyl-containing copolymer is copolymerized from (a) first compound, (b) second compound, and (c) third compound. (a) First compound is an aromatic compound having a single vinyl group. (b) Second compound is polybutadiene or polybutadiene-styrene having side vinyl groups. (c) Third compound is an acrylate compound. The vinyl-containing copolymer includes 0.003 mol/g to 0.010 mol/g of benzene ring, 0.0005 mol/g to 0.008 mol/g of vinyl group, and 1.2*10?5 mol/g to 2.4*10?4 mol/g of ester group.

Abstract: An optical element and a method for manufacturing the optical element are described. The optical element includes a transparent substrate, an optical layer, and an adhesive layer. The optical layer is located on a surface of the transparent substrate. The optical layer has a first surface and a second surface, which are opposite to each other. The first surface is set with various diffracting optical structures. A refractive index of the optical layer is equal to or greater than 1.4. The adhesive layer is sandwiched between the surface of the transparent substrate and the second surface of the optical layer.

Abstract: An apparatus, a method, and a system are presented in which the apparatus includes an interface control circuit that may be configured to receive a message including a cryptographic keyword and a policy value. The policy value may include one or more data bits indicative of one or more policies that define allowable usage of the cryptographic keyword. The apparatus also includes a security circuit that may be configured to extract the cryptographic keyword and the policy value from the message, and to apply at least one policy of the one or more policies to usage of the cryptographic keyword in response to a determination that an authentication of the message succeeded.

Abstract: Translating applications to a target language includes extracting program integrated information (PII) to be translated and creating translation context datasets based on interpretation of accessibility information associated with particular strings of PII. Translation pairs include PII and corresponding context datasets for context-based translation of application components. A two-stage index contains PII strings for first stage lookup and context datasets for distinguishing duplicate PII strings as a second stage lookup. Real-time translation is facilitated by the two-stage index, which is established by translation pairs and resulting translations.

Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.

Abstract: A semiconductor device is described. An isolation region is disposed on the substrate. A plurality of channels extend through the isolation region from the substrate. The channels including an active channel and an inactive channel. A dummy fin is disposed on the isolation region and between the active channel and the inactive channel. An active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. A dielectric material extends through the active gate and contacts a top of the dummy fin. The inactive channel is a closest inactive channel to the dielectric material. A long axis of the active channel extends in a first direction. A long axis of the active gate extends in a second direction. The active channel extends in a third direction from the substrate. The dielectric material is closer to the inactive channel than to the active channel.

Abstract: An optical proximity correction (OPC) device and method is provided. The OPC device includes an analysis unit, a reverse pattern addition unit, a first OPC unit, a second OPC unit and an output unit. The analysis unit is configured to analyze a defect pattern from a photomask layout. The reverse pattern addition unit is configured to provide a reverse pattern within the defect pattern. The first OPC unit is configured to perform a first OPC procedure on whole of the photomask layout. The second OPC unit is configured to perform a second OPC procedure on the defect pattern of the photomask layout to enhance an exposure tolerance window. The output unit is configured to output the photomask layout which is corrected.

Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.

Abstract: An optical element and a method for manufacturing the optical element are described. The optical element includes a transparent substrate, an optical layer, and an adhesive layer. The optical layer is located on a surface of the transparent substrate. The optical layer has a first surface and a second surface, which are opposite to each other. The first surface is set with various diffracting optical structures. A refractive index of the optical layer is equal to or greater than 1.4. The adhesive layer is sandwiched between the surface of the transparent substrate and the second surface of the optical layer.

Abstract: A method for manufacturing a semiconductor structure includes forming a first interconnect feature in a first dielectric feature, the first interconnect feature including a first conductive element exposed from the first dielectric feature; forming a first cap feature over the first conductive element, the first cap feature including a first cap element which includes a two-dimensional material; forming a second dielectric feature with a first opening that exposes the first cap element; forming a barrier layer over the second dielectric feature while exposing the first cap element from the barrier layer; removing a portion of the first cap element exposed from the barrier layer; and forming a second conductive element in the first opening.

Abstract: A method for identifying hard-coded strings in source code is disclosed. In one embodiment, such a method parses source code and associated localization resource files to identify hard-coded strings and their associated context. The method provides a confidence score for each hard-coded string that indicates whether the hard-coded string is translatable or non-translatable. Based on the confidence score for each hard-coded string, the method transforms each hard-coded string into a single equivalence word. The method then prepares training data by tagging the hard-coded strings in the source code and associated localization resource files as one of translatable and non-translatable. The method then trains a parts-of-speech (POS) tagging model using the training data. At runtime, the method fetches potential hard-coded strings and tags each hard-coded string as one of translatable and non-translatable using the POS tagging model. A corresponding system and computer program product are also disclosed.

Abstract: Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.

Abstract: This disclosure relates to a surgical tool configured for holding an implant includes an inner rod and a sleeve. The inner rod includes a rod portion and a holding portion. The holding portion is located at one end of the rod portion and has a first accommodation space configured for accommodating at least part of the implant. The sleeve includes a sleeving portion and a retaining portion. The sleeving portion is slidably sleeved on the rod portion of the inner rod. The retaining portion is located at one end of the sleeving portion and selectively presses against the holding portion. The inner rod further includes at least one fin portion protruded from the holding portion and located in the first accommodation space for being inserted into at least one slot of the implant.

Abstract: A coil module is provided, including a second coil mechanism. The second coil mechanism includes a third coil assembly and a second base corresponding to the third coil assembly. The second base has a positioning assembly corresponding to a first coil mechanism.

Abstract: In an embodiment, a system is provided in which the private key is managed in hardware and is not visible to software. The system may provide hardware support for public key generation, digital signature generation, encryption/decryption, and large random prime number generation without revealing the private key to software. The private key may thus be more secure than software-based versions. In an embodiment, the private key and the hardware that has access to the private key may be integrated onto the same semiconductor substrate as an integrated circuit (e.g. a system on a chip (SOC)). The private key may not be available outside of the integrated circuit, and thus a nefarious third party faces high hurdles in attempting to obtain the private key.