Patents by Inventor Shu-Yi Wang

Shu-Yi Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220149181
    Abstract: A method includes forming a first fin and a second fin over a substrate. The method includes forming a first dummy gate structure that straddles the first fin and the second fin. The first dummy gate structure includes a first dummy gate dielectric and a first dummy gate disposed over the first dummy gate dielectric. The method includes replacing a portion of the first dummy gate with a gate isolation structure. The portion of the first dummy gate is disposed over the second fin. The method includes removing the first dummy gate. The method includes removing a first portion of the first dummy gate dielectric around the first fin, while leaving a second portion of the first dummy gate dielectric around the second fin intact. The method includes forming a gate feature straddling the first fin and the second fin, wherein the gate isolation structure intersects the gate feature.
    Type: Application
    Filed: January 24, 2022
    Publication date: May 12, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yao Lin, Chih-Han Lin, Shu-Uei Jang, Ya-Yi Tsai, Chi-Hsiang Chang, Tzu-Chung Wang, Shu-Yuan Ku
  • Patent number: 10727064
    Abstract: Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-etch process. In an embodiment, a method for semiconductor processing is provided. The method includes performing a first deposition process to form a conformal film over a bottom surface and along sidewall surfaces of a feature on a substrate. The method includes performing an etch process to remove a portion of the conformal film. The method includes repeating the first deposition process and the etch process to fill the feature with the conformal film. The method includes exposing the conformal film to ultraviolet light.
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: July 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: De-Wei Yu, Chien-Hao Chen, Chih-Tang Peng, Jei Ming Chen, Shu-Yi Wang
  • Publication number: 20190318932
    Abstract: Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-etch process. In an embodiment, a method for semiconductor processing is provided. The method includes performing a first deposition process to form a conformal film over a bottom surface and along sidewall surfaces of a feature on a substrate. The method includes performing an etch process to remove a portion of the conformal film. The method includes repeating the first deposition process and the etch process to fill the feature with the conformal film. The method includes exposing the conformal film to ultraviolet light.
    Type: Application
    Filed: June 24, 2019
    Publication date: October 17, 2019
    Inventors: De-Wei Yu, Chien-Hao Chen, Chih-Tang Peng, Jei Ming Chen, Shu-Yi Wang
  • Patent number: 10332746
    Abstract: Embodiments disclosed herein relate generally to forming a gate layer in high aspect ratio trenches using a cyclic deposition-etch process. In an embodiment, a method for semiconductor processing is provided. The method includes performing a first deposition process to form a conformal film over a bottom surface and along sidewall surfaces of a feature on a substrate. The method includes performing an etch process to remove a portion of the conformal film. The method includes repeating the first deposition process and the etch process to fill the feature with the conformal film. The method includes exposing the conformal film to ultraviolet light.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: June 25, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: De-Wei Yu, Chien-Hao Chen, Chih-Tang Peng, Jei Ming Chen, Shu-Yi Wang
  • Patent number: 9457517
    Abstract: A powder shaping method comprises: providing a powder on a target surface; providing a laser beam to illuminate the powder so as to form a pre-treated powder; and providing an energy beam to illuminate the pre-treated powder for enabling a shaping process. In addition, a powder shaping apparatus comprises a base, a target surface, a powder supply unit and an energy beam source system. The target surface is disposed on the base and can be fixed or moved on the base. The powder supply unit provides a powder on the target surface. The energy beam source system has a laser source and an energy source, the laser source provides a laser beam to illuminate the powder to form a pre-treated powder, and the energy source provides an energy beam to further illuminate the pre-treated powder to make a shaping process.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: October 4, 2016
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chung-Wei Cheng, Kuang-Po Chang, Cen-Ying Lin, Shu-Yi Wang
  • Publication number: 20150130118
    Abstract: A powder shaping method comprises: providing a powder on a target surface; providing a laser beam to illuminate the powder so as to form a pre-treated powder; and providing an energy beam to illuminate the pre-treated powder for enabling a shaping process. In addition, a powder shaping apparatus comprises a base, a target surface, a powder supply unit and an energy beam source system. The target surface is disposed on the base and can be fixed or moved on the base. The powder supply unit provides a powder on the target surface. The energy beam source system has a laser source and an energy source, the laser source provides a laser beam to illuminate the powder to form a pre-treated powder, and the energy source provides an energy beam to further illuminate the pre-treated powder to make a shaping process.
    Type: Application
    Filed: December 20, 2013
    Publication date: May 14, 2015
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: CHUNG-WEI CHENG, KUANG-PO CHANG, CEN-YING LIN, SHU-YI WANG
  • Patent number: 8574137
    Abstract: An upper limb training device includes a first rod, a second rod, a third rod, a first resilient element, and a second resilient element. The second rod is pivoted to the first rod by a first revolution element. The third rod is pivoted to the second rod by a second revolution element. Two ends of the first resilient element respectively connect with the first rod and the third rod for providing resistance when the first rod and the second rod rotate relative to the third rod. Two ends of the second resilient element respectively connect with the first rod and the third rod for providing resistance when the first rod rotates relative to the second rod. The first revolution element is disposed between two connecting points at which the first resilient element and the second resilient element connect with the first rod.
    Type: Grant
    Filed: January 6, 2011
    Date of Patent: November 5, 2013
    Assignee: National Taiwan University
    Inventors: Dar-Zen Chen, Shu-Yi Wang, Tzong-Ming Wu
  • Publication number: 20120040807
    Abstract: An upper limb training device is disclosed. It includes a first rod, a second rod, a third rod, a first resilient element, and a second resilient element. The second rod is pivoted to the first rod by means of a first revolution element. The third rod is pivoted to the second rod by means of a second revolution element. Two ends of the first resilient element respectively connect with the first rod and the third rod for providing resistance when the first rod and the second rod rotate relative to the third rod. Two ends of the second resilient element respectively connect with the first rod and the third rod for providing resistance when the first rod rotates relative to the second rod. The first revolution element is disposed between two connecting points at which the first resilient element and the second resilient element connect with the first rod.
    Type: Application
    Filed: January 6, 2011
    Publication date: February 16, 2012
    Inventors: Dar-Zen Chen, Shu-Yi Wang, Tzong-Ming Wu