Abstract: A Micro-Electro-Mechanical-System (MEMS) microphone device includes a substrate, a MEMS microphone thin film, oxide layer. The substrate has a first penetrating portion. The MEMS microphone thin film is above the substrate and covered the first penetrating portion defining a first cavity. The MEMS microphone thin film includes an elastic portion and a connection portion. The elastic portion has a plurality of first slots arranged along the edge of the elastic portion and sequentially and separately. The first slots are penetrated two surface of the elastic portion, the surface are opposite each other. The connection portion is connected to the elastic portion and contacted the substrate. The oxide layer has a second penetrating portion. The oxide layer is on the MEMS microphone thin film and contacted the connection portion. A part of the MEMS microphone thin film is exposed through the second penetrating portion.

Abstract: A micro-electromechanical apparatus having a signal attenuation-proof function, and a manufacturing method and a signal attenuation-proof method thereof are disclosed. The micro-electromechanical apparatus includes a substrate, an insulation layer, and a sensing unit. The substrate has a doped region in which a majority of conductive carriers have the same polarity as an electronic signal. The insulation layer is located on the substrate, and the sensing unit is located above the insulation layer and forms the electronic signal when sensing a force.

Abstract: A micro-electromechanical apparatus having a signal attenuation-proof function, and a manufacturing method and a signal attenuation-proof method thereof are disclosed. The micro-electromechanical apparatus includes a substrate, an insulation layer, and a sensing unit. The substrate has a doped region in which a majority of conductive carriers have the same polarity as an electronic signal. The insulation layer is located on the substrate, and the sensing unit is located above the insulation layer and forms the electronic signal when sensing a force.

Abstract: A Micro-Electro-Mechanical-System (MEMS) microphone device includes a substrate, a MEMS microphone thin film, oxide layer. The substrate has a first penetrating portion. The MEMS microphone thin film is above the substrate and covered the first penetrating portion defining a first cavity. The MEMS microphone thin film includes an elastic portion and a connection portion. The elastic portion has a plurality of first slots arranged along the edge of the elastic portion and sequentially and separately. The first slots are penetrated two surface of the elastic portion, the surface are opposite each other. The connection portion is connected to the elastic portion and contacted the substrate. The oxide layer has a second penetrating portion. The oxide layer is on the MEMS microphone thin film and contacted the connection portion. A part of the MEMS microphone thin film is exposed through the second penetrating portion.

Abstract: A microelectromechanical system (MEMS) gas sensing device includes a substrate, an oxide layer, a heating unit, a thermal-conductive metal layer, a passivation layer, and a sensor layer. The substrate includes a first cavity. The oxide layer has a first surface and a second surface opposite to the first surface, is on the substrate, and covers on the first cavity. The first surface contacts the substrate. The heating unit is in the oxide layer and adjacent to the first surface of the oxide layer. The thermal-conductive metal layer is between the heating unit and the second surface of the oxide layer. The passivation layer is on the second surface of the oxide layer and includes at least one via. The sensor layer is on the passivation layer and electrically connected to the thermal-conductive metal layer through the at least one via.

Abstract: A tunable chemical sensing device includes a sensing unit, a plurality of first pads, a value reading circuit and a plurality of second pads. The sensing unit has a first impedance component and a plurality of second impedance components. The first impedance component and the second impedance components respectively have a first terminal and a second terminal. The second impedance components respectively have a different impedance value. The first pads are respectively coupled to the corresponding first and second terminals. The value reading circuit has a first input terminal, a second input terminal and an output terminal. The second pads are respectively coupled to the corresponding first input terminal, second input terminal and output terminal. A coupling relationship between the first pads and the second pads is adjusted to tune an impedance value of the sensing unit.

Abstract: A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.

Abstract: A MEMS apparatus includes a pillar, a supporter, and a solder. The pillar has a first side and a second side opposite to the first side. The supporter supports the pillar. The supporter is adjacent to the pillar, but the supporter is not connected to the pillar. The supporter has a third side and a fourth side opposite to the third side. The supporter includes a plurality of first confined layers and a plurality of second confined layers. These first confined layers and these second confined layers are overlapped with each other. The second side and the third side are adjacent to each other. The solder is located between the second side and the third side. The solder is also located at the first side and the fourth side. The solder is utilized to combine the pillar and the supporter. The solder also isolates the pillar and the supporter.

Abstract: A MEMS apparatus includes a pillar, a supporter, and a solder. The pillar has a first side and a second side opposite to the first side. The supporter supports the pillar. The supporter is adjacent to the pillar, but the supporter is not connected to the pillar. The supporter has a third side and a fourth side opposite to the third side. The supporter includes a plurality of first confined layers and a plurality of second confined layers. These first confined layers and these second confined layers are overlapped with each other. The second side and the third side are adjacent to each other. The solder is located between the second side and the third side. The solder is also located at the first side and the fourth side. The solder is utilized to combine the pillar and the supporter. The solder also isolates the pillar and the supporter.

Abstract: A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.

Abstract: A signal boosting apparatus and a method of boosting signals applied in the MEMS are disclosed. The signal boosting apparatus includes a substrate, an oxide layer, and a signal transmission layer. The substrate has a doped region. The doped region has a plurality of conductive carriers. These conductive carriers have the same polarity as an electronic signal. The oxide layer is located on the substrate, and the signal transmission layer is located on the oxide layer. The signal transmission layer can receive and boost the electronic signal.