Abstract: A method includes following steps. First transistors are formed over a substrate. An interconnect structure is formed over the plurality of first transistors. A dielectric layer is formed over the interconnect structure. 2D semiconductor seeds are formed over the dielectric layer. The 2D semiconductor seeds are annealed. An epitaxy process is performed to laterally grow a plurality of 2D semiconductor films respectively from the plurality of 2D semiconductor seeds. Second transistors are formed on the plurality of 2D semiconductor films.

Abstract: A display panel includes a substrate, a plurality of bottom electrodes, an isolation layer, a plurality of light emitting layers, a top electrode, and at least one first auxiliary electrode. The bottom electrodes and the isolation layer are disposed on the substrate. The isolation layer has a plurality of pixel region openings and at least one buffer region. Each of the pixel region openings respectively exposes the corresponding bottom electrode. The buffer region is disposed between two adjacent pixel region openings. The light emitting layers are respectively disposed on the corresponding bottom electrodes. The top electrode covers the light emitting layers, the isolation layer, and the buffer region. The first auxiliary electrode is disposed in the buffer region.

Abstract: A display panel includes a substrate, a plurality of bottom electrodes, an isolation layer, a plurality of light emitting layers, a top electrode, and at least one first auxiliary electrode. The bottom electrodes and the isolation layer are disposed on the substrate. The isolation layer has a plurality of pixel region openings and at least one buffer region. Each of the pixel region openings respectively exposes the corresponding bottom electrode. The buffer region is disposed between two adjacent pixel region openings. The light emitting layers are respectively disposed on the corresponding bottom electrodes. The top electrode covers the light emitting layers, the isolation layer, and the buffer region. The first auxiliary electrode is disposed in the buffer region.