Abstract: The application discloses a chip fabrication process for improving LED chip light extraction efficiency and an LED chip. The LED chip comprises: a patterned sapphire substrate including a sapphire substrate and an oxide layer provided on the sapphire substrate; an LED chip epitaxial wafer provided on a patterned sapphire substrate, and the outer periphery of the LED chip epitaxial wafer is provided with an isolation groove; the LED chip epitaxial wafer comprises an N-type gallium nitride layer and a P-type gallium nitride layer, wherein the N-type gallium nitride layer is provided on a patterned sapphire substrate, the P-type gallium nitride layer is provided on the N-type gallium nitride layer, and the isolation groove is a multi-layer triangular cone, a semi-circle or a sphere.

Abstract: The present application provides constructs comprising a single-domain antibody (sdAb) moiety that specifically recognizes TIGIT. Also provided are methods of making and using these constructs.

Abstract: The present application provides anti-LAG-3 constructs comprising a single-domain antibody (sdAb) that specifically recognizes LAG-3. Also provided are methods of making and using these constructs.

Abstract: A polysilicon resistor is disclosed, to reduce a voltage coefficient of the polysilicon resistor. The polysilicon resistor includes: a polysilicon layer (101), a voltage module (102), and a substrate layer (103), where the voltage module (102) is configured to transmit a voltage on the polysilicon layer (101) to the substrate layer (103).

Abstract: Provided is a curved liquid crystal display panel, including a color film substrate and an array substrate. An orthographic projection of the color film substrate on the array substrate is within the array substrate. The color film substrate includes a first side surface and a second side surface. The array substrate includes a third side surface and a fourth side surface. The first side surface is adjacent to and staggered from the third side surface. The second side surface is adjacent to and staggered from the fourth side surface. At positions where the third side surface and the fourth side surface are disposed, each of a side, proximal to the color film substrate, of the array substrate and a side, distal from the color film substrate, of the array substrate includes a structure formed by a grinding process.

Abstract: The present application discloses a sensing signal receiving system and method. The system includes an interface module configured to receive a sensing signal, a narrowband frequency-selective module configured to determine a frequency-selective signal in the sensing signal according to a preset receive frequency, a high amplification module configured to amplify the received frequency-selective signal to obtain an amplified signal, and an in-phase comparison module configured to convert the amplified signal into a TTL standard signal. A frequency of the frequency-selective signal is the preset receive frequency or is a narrowband section including the preset receive frequency. The narrowband frequency-selective module is further configured to output the frequency-selective signal to the high amplification module.