Patents by Inventor Shuaidi Zhang
Shuaidi Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11970777Abstract: Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.Type: GrantFiled: June 24, 2022Date of Patent: April 30, 2024Assignee: Applied Materials, Inc.Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu, Bhaskar Jyoti Bhuyan, Mark Saly, Thomas Knisley
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Publication number: 20240133033Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.Type: ApplicationFiled: January 3, 2024Publication date: April 25, 2024Inventors: Jacqueline Wrench, Shuaidi Zhang, Arjav Prafulkumar Vashi, Shubham Garg, Todd Robert Dunn, Moataz Bellah Mousa, Jonathan Bakke, Ibrahim Mohamed, Paul Ma, Bo Wang, Eric Shero, Jereld Lee Winkler
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Patent number: 11713507Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-? films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.Type: GrantFiled: June 15, 2022Date of Patent: August 1, 2023Assignee: Applied Materials, Inc.Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu
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Publication number: 20220349051Abstract: A reaction system including a chemical storage assembly in fluid communication with both a remote plasma unit and a bypass line for providing both a plasma activated cleaning species and a non-plasma activated cleaning species to a reaction chamber.Type: ApplicationFiled: April 26, 2022Publication date: November 3, 2022Inventors: Amit Mishra, Jereld Lee Winkler, Moataz Bellah Mousa, Mustafa Muhammad, Paul Ma, Hichem M'Saad, Ying-Shen Kuo, Chad Lunceford, Shuaidi Zhang
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Publication number: 20220325412Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-? films are described.Type: ApplicationFiled: June 24, 2022Publication date: October 13, 2022Applicant: Applied Materials, Inc.Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu, Bhaskar Jyoti Bhuyan, Mark Saly, Thomas Knisley
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Publication number: 20220307134Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-? films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.Type: ApplicationFiled: June 15, 2022Publication date: September 29, 2022Applicant: Applied Materials, Inc.Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu
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Patent number: 11447865Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described.Type: GrantFiled: November 17, 2020Date of Patent: September 20, 2022Assignee: Applied Materials, Inc.Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu, Bhaskar Jyoti Bhuyan, Mark Saly, Thomas Knisley
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Patent number: 11371144Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.Type: GrantFiled: June 10, 2020Date of Patent: June 28, 2022Assignee: Applied Materials, Inc.Inventors: Shuaidi Zhang, Ning Li, Mihaela Balseanu
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Patent number: 11359281Abstract: Methods of selectively forming SiCON films are described. In some embodiments, the methods comprise sequential exposure to a silicon halide, a mixture of alkanolamine and amine reactants and a deposition plasma. In some embodiments, the method further comprises pre-cleaning the target substrate to improve selectivity.Type: GrantFiled: January 26, 2020Date of Patent: June 14, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Shuaidi Zhang, Ning Li, Mihaela Balseanu
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Publication number: 20220154337Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described.Type: ApplicationFiled: November 17, 2020Publication date: May 19, 2022Applicant: Applied Materials, Inc.Inventors: Shuaidi Zhang, Ning Li, Mihaela A. Balseanu, Bhaskar Jyoti Bhuyan, Mark Saly, Thomas Knisley
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Publication number: 20210388499Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.Type: ApplicationFiled: June 10, 2020Publication date: December 16, 2021Applicant: Applied Materials, Inc.Inventors: Shuaidi Zhang, Ning Li, Mihaela Balseanu
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Publication number: 20210230747Abstract: Methods of selectively forming SiCON films are described. In some embodiments, the methods comprise sequential exposure to a silicon halide, a mixture of alkanolamine and amine reactants and a deposition plasma. In some embodiments, the method further comprises pre-cleaning the target substrate to improve selectivity.Type: ApplicationFiled: January 26, 2020Publication date: July 29, 2021Applicant: Applied Materials, Inc.Inventors: Shuaidi Zhang, Ning Li, Mihaela Balseanu