Patents by Inventor Shuaidl Zhang

Shuaidl Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220262619
    Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 ?/min.
    Type: Application
    Filed: February 9, 2022
    Publication date: August 18, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Ning Li, Shuaidl Zhang, Mihaela A. Balseanu, Qi Gao, Rajesh Prasad, Tomohiko Kitajima, Chang Seok Kang, Deven Matthew Raj Mittal, Kyu-Ha Shim