Abstract: Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.

Abstract: Provided herein is an apparatus, including a first region of a substrate corresponding to a data region in a patterned recording medium; a first set of protrusions etched out of the first region of the substrate, wherein the protrusions of the first set of protrusions are rectangle shaped; a second region of the substrate corresponding to a servo region in a patterned recording medium; and a second set of protrusions etched out of the second region of the substrate, wherein the second set of protrusions includes radial lines etched into the substrate across chevrons etched out of the substrate.

Abstract: Provided herein is a method including forming a data zone guiding pattern and forming a servo zone guiding pattern. A servo pattern and a data pattern are simultaneously formed. Directed self-assembly of block copolymers is guided by the data zone guiding pattern and the servo zone guiding pattern.

Abstract: The embodiments disclose a method including patterning a template substrate to have different densities using hierarchical block copolymer density patterns in different zones including a first pattern and a second pattern, using a first directed self-assembly to pattern a first zone in the substrate using a first block copolymer material, and using a second directed self-assembly to pattern a second zone in the substrate using a second block copolymer material.

Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.

Abstract: Provided herein is an apparatus, including a first region of a substrate corresponding to a data region in a patterned recording medium; a first set of protrusions etched out of the first region of the substrate, wherein the protrusions of the first set of protrusions are rectangle shaped; a second region of the substrate corresponding to a servo region in a patterned recording medium; and a second set of protrusions etched out of the second region of the substrate, wherein the second set of protrusions includes radial lines etched into the substrate across chevrons etched out of the substrate.

Abstract: The embodiments disclose a method including patterning a template substrate to have different densities using hierarchical block copolymer density patterns in different zones including a first pattern and a second pattern, using a first directed self-assembly to pattern a first zone in the substrate using a first block copolymer material, and using a second directed self-assembly to pattern a second zone in the substrate using a second block copolymer material.

Abstract: A method is disclosed that includes forming at least one substrate alignment mark and at least one lithography alignment mark in a substrate; forming a seed layer on the substrate; and forming a guide pattern and at least one guide pattern alignment mark in the seed layer, where the at least one guide pattern alignment mark is formed over the at least one substrate alignment mark. The method further includes determining an alignment error of the at least one guide pattern alignment mark relative to the at least one substrate alignment mark; and patterning features on at least one region of the substrate, where the features are positioned on the substrate based on the at least one lithography alignment mark and the alignment error.

Abstract: Provided herein are apparatuses and methods related to creating a patterned resist layer on a substrate; selectively treating at least a resist-contacting layer of the substrate in contact with the patterned resist layer to create a patterned growth guiding mechanism and growing patterned magnetic features guided by the patterned growth guiding mechanism.

Abstract: Provided herein is an apparatus including a rectangular array of rectangular protrusions in a first region corresponding to a data region; and a hexagonal array of circular protrusions in a second region corresponding to a servo region, wherein a first global protrusion density for the first region is greater than a second global protrusion density for the second region. Also provided herein is a method including forming a first template; forming a second template; and cross-imprinting the first template and the second template to form a third template corresponding to the foregoing apparatus.

Abstract: Provided is an apparatus that includes a substrate; a first hard-mask pattern that includes a number of first features disposed over a top surface of the substrate; and a second hard-mask pattern disposed over the first hard-mask layer. The second hard-mask pattern includes a number of second features overlapping one or more of the first features.

Abstract: Provided is an apparatus that includes a substrate; a first hard-mask pattern that includes a number of first features disposed over a top surface of the substrate; and a second hard-mask pattern disposed over the first hard-mask layer. The second hard-mask pattern includes a number of second features overlapping one or more of the first features.

Abstract: A substrate having an arrangement of self-assembling magnetic domains and a method of fabrication therefor. In some embodiments, a substrate is patterned with a plurality of chemically contrasted alignment features, and a block copolymer having a magnetic component and a non-magnetic component is deposited onto the substrate. The block copolymer self-assembles into a sequence of magnetic domains responsive to the alignment features. The period of the alignment features is between about 2 times and about 10 times the period of the magnetic domains.

Abstract: Provided is an apparatus that includes a substrate; a first hard-mask pattern that includes a number of first features disposed over a top surface of the substrate; and a second hard-mask pattern disposed over the first hard-mask layer. The second hard-mask pattern includes a number of second features overlapping one or more of the first features.

Abstract: A perpendicular magnetic media includes a substrate, a patterned template, a seed layer and a magnetic layer. The patterned template is formed on the substrate and includes a plurality of growth sites that are evenly spaced apart from each other. The seed layer is formed over the patterned template and the exposed areas of the substrate. Magnetic material is sputter deposited onto the seed layer with one grain of the magnetic material nucleated over each of the growth sites. The grain size distribution of the magnetic material is reduced by controlling the locations of the growth sites which optimizes the performance of the perpendicular magnetic media.

Abstract: Provided herein is an apparatus, including a patterned resist overlying a substrate; a number of features of the patterned resist, wherein the number of features respectively includes a number of sidewalls; and a sidewall-protecting material disposed about the number of sidewalls, wherein the sidewall-protecting material is characteristic of a conformal, thin-film deposition, and wherein the sidewall-protecting material facilitates a high-fidelity pattern transfer of the patterned resist to the substrate during etching.

Abstract: The embodiments disclose a method including patterning a template substrate to have different densities using hierarchical block copolymer density patterns in different zones including a first pattern and a second pattern, using a first directed self-assembly to pattern a first zone in the substrate using a first block copolymer material, and using a second directed self-assembly to pattern a second zone in the substrate using a second block copolymer material.

Abstract: Provided herein are apparatuses and methods, including patterning a first set of features in a servo zone to form a patterned servo zone while a first mask protects a data zone from the patterning. The first mask may be removed from the data zone. The apparatuses and methods may further include patterning a second set of features in the data zone to form a patterned data zone while a second mask protects the patterned servo zone from the patterning.

Abstract: The embodiments disclose a method of using a trimmed imprinted resist and chemical contrast pattern to guide a directed self-assembly (DSA) of a predetermined lamellar block copolymer (BCP), creating chromium (Cr) lamellar guiding lines using the BCP and DSA in a dry Cr lift-off process and etching the Cr lamellar guiding line patterns into a substrate to fabricate the imprint template.

Abstract: A substrate having an arrangement of self-assembling magnetic domains and a method of fabrication therefor. In some embodiments, a substrate is patterned with a plurality of chemically contrasted alignment features, and a block copolymer having a magnetic component and a non-magnetic component is deposited onto the substrate. The block copolymer self-assembles into a sequence of magnetic domains responsive to the alignment features. The period of the alignment features is between about 2 times and about 10 times the period of the magnetic domains.