Patents by Inventor SHUAISHUAI DONG

SHUAISHUAI DONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DRILLING DEVICE FOR GEOTECHNICAL ENGINEERING INVESTIGATION
    Publication number: 20230313615
    Abstract: A drilling device for geotechnical engineering investigation is provided, including an outer supporting ring seat, where a center of the outer supporting ring seat is rotatably connected with a middle supporting ring seat through a first supporting shaft rod; a center of the middle supporting ring seat is rotatably connected with an inner supporting ring seat through a second supporting shaft rod; the first supporting shaft rod and the second supporting shaft rod are vertically crossed; a second rotating motor is fixedly installed at one end of the first supporting shaft rod on an outer surface of the outer supporting ring seat; a pow output end of the second rotating motor is fixedly connected with the first supporting shaft rod, an other end of the first supporting shaft rod is provided with a first locking mechanism for position limitation.
    Type: Application
    Filed: June 8, 2023
    Publication date: October 5, 2023
    Inventors: Yu SONG, Mingzhi ZHANG, Jun LI, Xiaohui GAN, Hui LI, Jianqiang WANG, Yukun GENG, Shuaishuai DONG, Song DING
  • Method for characterizing ohmic contact electrode performance of semiconductor device
    Patent number: 10755990
    Abstract: The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.
    Type: Grant
    Filed: April 6, 2019
    Date of Patent: August 25, 2020
    Assignee: XIDIAN UNIVERSITY
    Inventors: Xuefeng Zheng, Xiaohua Ma, Yue Hao, Shuaishuai Dong, Peng Ji, Yingzhe Wang, Zhenling Tang, Chong Wang, Shihui Wang
  • METHOD FOR CHARACTERIZING OHMIC CONTACT ELECTRODE PERFORMANCE OF SEMICONDUCTOR DEVICE
    Publication number: 20190237369
    Abstract: The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.
    Type: Application
    Filed: April 6, 2019
    Publication date: August 1, 2019
    Inventors: XUEFENG ZHENG, XIAOHUA MA, YUE HAO, SHUAISHUAI DONG, PENG JI, YINGZHE WANG, ZHENLING TANG, CHONG WANG, SHIHUI WANG