Patents by Inventor Shuang FENG

Shuang FENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120202509
    Abstract: A method of allocating ranging codes by a macro base station in a communication system is provided. The method includes broadcasting information related to adjacent femto base stations, receiving a ranging request including class information indicating a degree of a strength of interference of an adjacent macro base station from a terminal, and allocating one of ranging codes included in a code subset dedicated to a corresponding class to the terminal, the ranging codes being allocatable to only terminals in a class indicated by the class information.
    Type: Application
    Filed: February 7, 2012
    Publication date: August 9, 2012
    Applicant: SAMSUNG ELECTRONICS CO. LTD.
    Inventors: Shuang Feng HAN, Su-Ryong JEONG, Chi-Woo LIM
  • Publication number: 20120196624
    Abstract: A method and an apparatus for reporting location information of a Mobile Station (MS) through a ranging procedure in a wireless communication system are provided. A Base Station (BS) transmits, to the MS, partition information representing a plurality of partition regions constituting the BS cell coverage. Upon receiving from the MS a ranging code belonging to one ranging code subset among a plurality of ranging code subsets corresponding to the plurality of partition regions based on the partition information, the BS determines location information of the MS depending on the partition region corresponding to the ranging code subset to which the received ranging code belongs, making it possible to notify the network of the MS's location information without the need to define a separate signaling procedure.
    Type: Application
    Filed: January 26, 2012
    Publication date: August 2, 2012
    Applicant: SAMSUNG ELECTRONICS CO. LTD.
    Inventors: Shuang-Feng HAN, Sung-Eun PARK, Hyun-Kyu YU
  • Publication number: 20120021689
    Abstract: A signaling method for mitigating interference by a device in a machine-to-machine (M2M) communication system. The device measures reference signals transmitted from other devices, and determines a Neighbor Device Set (NDS) including at least one device whose signal power is greater than or equal to a first threshold. Based on the measured values of the reference signals, the device sets up M2M communication with a first device, for data communication, and determines a Restricted Device List (RDL) including at least one device causing interference unallowable for communication with the first device based on the measured value of the reference signal from at least one device in the NDS. The device also transmits the RDL to at least one device in the NDS or the RDL, thereby mitigating the overall system interference.
    Type: Application
    Filed: July 20, 2011
    Publication date: January 26, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Shuang Feng Han
  • Publication number: 20050260840
    Abstract: A method of fabricating a T-shaped polysilicon gate by using dual damascene process. An oxide layer, a hard mask layer, and a patterned first photoresist layer in sequence are formed on a semiconductor substrate. Using the patterned first photoresist layer as a mask, an etching process is performed on the hard mask layer to form a first trench. The patterned first photoresist layer is removed. An organic layer is then deposited in the first trench. A patterned second photresist layer is formed on the semiconductor substrate. Using the patterned second photresist layer as a mask, an etching process is performed on the hard mask layer to define a second trench dimension. The patterned second photoresist layer and the organic layer are removed. An oxide layer and a polysilicon layer are deposited in the first trench and the second trench. The residual hark mask layer is removed to obtain a T-shaped profile polysilicon gate.
    Type: Application
    Filed: April 5, 2005
    Publication date: November 24, 2005
    Inventors: Shuang-Feng Yeh, Pin-Jen Chen, Hui-Ping Ma, Ta-Yung Pao
  • Publication number: 20050048754
    Abstract: A processing method for increasing the packaging density of an integrated circuit. The processing method of the present invention includes a gate structure on a semiconductor substrate. An oxide film is formed on adjacent lateral sides of a gate structure. A spacer material is conformally deposited on the oxide film and an oxide portion is formed over the spacer material. The oxide portion has a shape to cover an L-shaped portion of the spacer material. The oxide portion is then removed to expose the L-shaped portion of the spacer material. The gate structures having L-shaped spacers benefit from increased packaging density in an integrated circuit, and improve gap filling and prevent contact-to-gate shorts.
    Type: Application
    Filed: August 23, 2004
    Publication date: March 3, 2005
    Inventors: Shuang-Feng Yeh, Been Woo