Shuang FENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A method of fabricating a T-shaped polysilicon gate by using dual damascene process. An oxide layer, a hard mask layer, and a patterned first photoresist layer in sequence are formed on a semiconductor substrate. Using the patterned first photoresist layer as a mask, an etching process is performed on the hard mask layer to form a first trench. The patterned first photoresist layer is removed. An organic layer is then deposited in the first trench. A patterned second photresist layer is formed on the semiconductor substrate. Using the patterned second photresist layer as a mask, an etching process is performed on the hard mask layer to define a second trench dimension. The patterned second photoresist layer and the organic layer are removed. An oxide layer and a polysilicon layer are deposited in the first trench and the second trench. The residual hark mask layer is removed to obtain a T-shaped profile polysilicon gate.
April 5, 2005
November 24, 2005
Shuang-Feng Yeh, Pin-Jen Chen, Hui-Ping Ma, Ta-Yung Pao
Abstract: A processing method for increasing the packaging density of an integrated circuit. The processing method of the present invention includes a gate structure on a semiconductor substrate. An oxide film is formed on adjacent lateral sides of a gate structure. A spacer material is conformally deposited on the oxide film and an oxide portion is formed over the spacer material. The oxide portion has a shape to cover an L-shaped portion of the spacer material. The oxide portion is then removed to expose the L-shaped portion of the spacer material. The gate structures having L-shaped spacers benefit from increased packaging density in an integrated circuit, and improve gap filling and prevent contact-to-gate shorts.