Abstract: The present invention relates to a positive electrode material comprising a core material and a coating layer coated on the surface of the core material, the core material comprises nickel hydroxide, and the coating layer comprises a tetravalent cobalt compound; and based on the weight of the coating layer, the content of the tetravalent cobalt compound is no less than 45 wt %. The present invention also relates to a preparation method for the positive electrode material. The present invention further relates to an alkaline secondary battery containing the positive electrode material.

Abstract: A method includes identifying a middlebox receiving network flow and communicating with one or more backend virtual machines. The method also includes receiving flow statistics corresponding to the network flow of the middlebox and determining whether the flow statistics satisfy an offload rule. The offload rule indicates when to migrate the network flow from the middlebox to an end host. When the flow statistics satisfy the offload rule, the method also includes migrating the network flow from the middlebox to the end host.

Abstract: A method includes identifying a middlebox receiving network flow and communicating with one or more backend virtual machines. The method also includes receiving flow statistics corresponding to the network flow of the middlebox and determining whether the flow statistics satisfy an offload rule. The offload rule indicates when to migrate the network flow from the middlebox to an end host. When the flow statistics satisfy the offload rule, the method also includes migrating the network flow from the middlebox to the end host.

Abstract: A method includes identifying a middlebox receiving network flow and communicating with one or more backend virtual machines. The method also includes receiving flow statistics corresponding to the network flow of the middlebox and determining whether the flow statistics satisfy an offload rule. The offload rule indicates when to migrate the network flow from the middlebox to an end host. When the flow statistics satisfy the offload rule, the method also includes migrating the network flow from the middlebox to the end host.

Abstract: A method for transparent migration of virtual network functions is provided. The method includes identifying a middlebox receiving network flow and communicating with one or more backend virtual machines. The method also includes receiving flow statistics corresponding to the network flow of the middlebox and determining whether the flow statistics satisfy an offload rule. The offload rule indicates when to migrate the network flow from the middlebox to an end host. When the flow statistics satisfy the offload rule, the method also includes migrating the network flow from the middlebox to the end host.

Abstract: Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.

Abstract: Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.