Abstract: Methods of forming a contact structure, contact structures and apparatuses applied thereto are disclosed. The method of forming a contact structure forms a dielectric layer on a substrate. A metal contact with metal oxide thereon is formed in the dielectric layer. The solubility of the metal oxide is enhanced by using H2O with a temperature higher than about 10° C. or a chemical with a temperature higher than about 15° C.

Abstract: Methods of forming a contact structure, contact structures and apparatuses applied thereto are disclosed. The method of forming a contact structure forms a dielectric layer on a substrate. A metal contact with metal oxide thereon is formed in the dielectric layer. The solubility of the metal oxide is enhanced by using H2O with a temperature higher than about 10° C. or a chemical with a temperature higher than about 15° C.

Abstract: A method of forming an insulator between features of a semiconductor device. An insulating material such as high-density plasma (HDP) oxide is deposited over and between features formed on a semiconductor device. The height of the insulating material between the features is preferably less than the height of the features. A sputter process or other removal process is used to decrease the insulating material height of the features and decrease the insulating material height between the features. The insulating material is removed from over the top surface of the features, and a chemical-mechanical polish (CMP) process is used to lower the top surface of the features, stopping on the insulating material between the features.

Abstract: A method of forming an insulator between features of a semiconductor device. An insulating material such as high-density plasma (HDP) oxide is deposited over and between features formed on a semiconductor device. The height of the insulating material between the features is preferably less than the height of the features. A sputter process or other removal process is used to decrease the insulating material height of the features and decrease the insulating material height between the features. The insulating material is removed from over the top surface of the features, and a chemical-mechanical polish (CMP) process is used to lower the top surface of the features, stopping on the insulating material between the features.

Abstract: A multi-functional conditioner set for a chemical-mechanical polishing station. The multi-functional conditioner set has at least two conditioning heads each made from a different material such as diamond dust and nylon. The multi-functional conditioner set also includes an ejection tube for delivering chemical agents and de-ionized water to the conditioning heads. Moreover, a vibrator is attached to the ejection tube to transmit ultrasonic or megasonic vibration to the chemical agents and de-ionized water. The conditioning heads can be arranged in various combinations and the ejection tube set to various control settings. Hence, a polishing pad can be cleaned or reconditioned and residual diamond particles on the polishing pad can be removed. Furthermore, the conditioner set occupies only a single area above the polishing table of the polishing station.

Abstract: A multi-functional conditioner set for a chemical-mechanical polishing station. The multi-functional conditioner set has at least two conditioning heads each made from a different material such as diamond dust and nylon. The multi-functional conditioner set also includes an ejection tube for delivering chemical agents and de-ionized water to the conditioning heads. Moreover, a vibrator is attached to the ejection tube to transmit ultrasonic or megasonic vibration to the chemical agents and de-ionized water. The conditioning heads can be arranged in various combinations and the ejection tube set to various control settings. Hence, a polishing pad can be cleaned or reconditioned and residual diamond particles on the polishing pad can be removed. Furthermore, the conditioner set occupies only a single area above the polishing table of the polishing station.

Abstract: An apparatus and method for conditioning the polishing pad of CMP system by employing a multi-zone conditioner, or dresser. The conditioner comprises a plurality of rollers or disks, which can be well tuned to make down-pressure and rolling speed of the rollers or disks to the extent as desirable. The conditioner further comprises driving means for rotating the polishing rollers or disks. It can make a better uniformity of the pad conditioning and improve the profile of the polished wafers. The apparatus and method for conditioning the polishing pad can be especially used to compensate the uniformity of the incoming films, or the pre-CMP films.