Abstract: Embodiments of the present disclosure relate to methods, devices and apparatuses for optical communication, and a computer readable medium. An embodiment of the method comprises determining, at an optical line terminal, a channel characteristic of a channel from an optical network unit to the optical line terminal; determining, based on the channel characteristic, a preamble property for a transmission from the optical network unit to the optical line terminal, the preamble property at least partially compensating for transmission distortion caused by the channel characteristic; transmitting preamble information to the optical network unit, the preamble information being for generating a preamble having the preamble property; and receiving the preamble having the preamble property from the optical network unit. In this way, a training speed of an equalizer of the optical line terminal can be improved, and preamble overhead can be reduced.

Abstract: Examples of the present disclosure relate to a method, device and apparatus for communication, and a computer-readable medium. An example of the method includes: conducting, based on a channel response between a transmitter and a receiver, spectral shaping on a first sequence at the transmitter, so as to obtain an intermediate sequence, where the spectral shaping at least partially counters the channel response; remapping the intermediate sequence, so as to obtain a second sequence, where the second sequence has less signal levels than the intermediate sequence; and transmitting the second sequence to the receiver, so as to train an equalizer of the receiver. In this way, the method can accelerate training of the equalizer without sacrificing performance of the equalizer or introducing any additional hardware cost.

Abstract: An SRAM and a forming method and a controlling method thereof are provided. The above-mentioned SRAM includes a tracking column, a normal column, a cell voltage control circuit and a cell voltage pull-down circuit. Each of the tracking column and the normal column includes a plurality of memory cells. The cell voltage control circuit is coupled to the tracking column and the normal column for connecting an operation voltage to the two columns before a write operation of the SRAM starts and for disconnecting the operation voltage from the two columns after the write operation starts. The cell voltage pull-down circuit is coupled to the two columns for pulling down the cell voltages of the two columns after the write operation starts and for ceasing pulling down the cell voltage of the normal column when the cell voltage of the tracking column drops down to a predetermined voltage.

Abstract: An SRAM and a forming method and a controlling method thereof are provided. The above-mentioned SRAM includes a tracking column, a normal column, a cell voltage control circuit and a cell voltage pull-down circuit. Each of the tracking column and the normal column includes a plurality of memory cells. The cell voltage control circuit is coupled to the tracking column and the normal column for connecting an operation voltage to the two columns before a write operation of the SRAM starts and for disconnecting the operation voltage from the two columns after the write operation starts. The cell voltage pull-down circuit is coupled to the two columns for pulling down the cell voltages of the two columns after the write operation starts and for ceasing pulling down the cell voltage of the normal column when the cell voltage of the tracking column drops down to a predetermined voltage.