Patents by Inventor Shuang ZHAN

Shuang ZHAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9562884
    Abstract: A method for manufacturing an NO2 gas sensor for detection at room temperature comprises: manufacturing a metal electrode on a surface of a flexible substrate; manufacturing an SWCNTs/SnO2 sensitive film; and bonding the SWCNTs/SnO2 sensitive film with a portion of the surface of the flexible substrate with the metal electrode, so as to form the NO2 gas sensor for detection at room temperature. The present disclosure solves the problems of the poor adhesion between the sensitive material and the flexible substrate, and a non-uniform distribution, and achieves the purposes of secure bonding between the sensitive material and the flexible substrate, and uniform distribution.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: February 7, 2017
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Dongmei Li, Shuang Zhan, Shengfa Liang, Xin Chen, Changqing Xie, Ming Liu
  • Patent number: 9418843
    Abstract: The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of H2PtCl6 so as to displace Pt on the Ni nanowires array by a displacement reaction; and oxidizing the Ni nanowires array attached with Pt in an oxidation oven to obtain the ordered nanowires array of NiO doped with Pt.
    Type: Grant
    Filed: January 17, 2013
    Date of Patent: August 16, 2016
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Dongmei Li, Xin Chen, Shengfa Liang, Jiebin Niu, Peiwen Zhang, Yu Liu, Xiaojing Li, Shuang Zhan, Hao Zhang, Qing Luo, Changqing Xie, Ming Liu
  • Publication number: 20160123944
    Abstract: A method for manufacturing an NO2 gas sensor for detection at room temperature comprises: manufacturing a metal electrode on a surface of a flexible substrate; manufacturing an SWCNTs/SnO2 sensitive film; and bonding the SWCNTs/SnO2 sensitive film with a portion of the surface of the flexible substrate with the metal electrode, so as to form the NO2 gas sensor for detection at room temperature. The present disclosure solves the problems of the poor adhesion between the sensitive material and the flexible substrate, and a non-uniform distribution, and achieves the purposes of secure bonding between the sensitive material and the flexible substrate, and uniform distribution.
    Type: Application
    Filed: June 5, 2013
    Publication date: May 5, 2016
    Inventors: Dongmei LI, Shuang ZHAN, Shengfa LIANG, Xin CHEN, Changqing XIE, Ming LIU
  • Publication number: 20150357191
    Abstract: The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of H2PtCl6 so as to displace Pt on the Ni nanowires array by a displacement reaction; and oxidizing the Ni nanowires array attached with Pt in an oxidation oven to obtain the ordered nanowires array of NiO doped with Pt.
    Type: Application
    Filed: January 17, 2013
    Publication date: December 10, 2015
    Inventors: Dongmei Li, Xin Chen, Shengfa Liang, Jiebin Niu, Peiwen Zhang, Yu Liu, Xiaojing Li, Shuang Zhan, Hao Zhang, Qing Luo, Changqing Xie, Ming Liu
  • Publication number: 20150325437
    Abstract: The present disclosure provides a method for preparing compound semiconductor sensitive film based on a displacement reaction-thermal oxidation method, the method comprising: growing a layer of Zn on a high temperature-resistant substrate; submerging the substrate on which the layer of Zn has been grown into ionic solution of soluble salt of Cu, such that Cu ions in the solution are displaced so as to separate Cu nano-particles out on a surface of the layer of Zn; and performing a thermal oxidation process on the layer of Zn to whose surface Cu nano-particles are adhered, such that the Cu nano-particles are oxidized into CuO nano-particles, so as to obtain a ZnO gas sensitive film that is doped with CuO nano-particles. The above preparing method has the following advantages: good filming quality, simplified preparation process, low cost and easy to control.
    Type: Application
    Filed: July 16, 2015
    Publication date: November 12, 2015
    Inventors: Dongmei LI, Xin CHEN, Shengfa LIANG, Shuang ZHAN, Peiwen ZHANG, Changqing XIE, Ming LIU