Abstract: A stereoscopic phase-contrast X-ray imaging system (1) comprises a stereoscopic radiation head (20) having at least one X-ray source (30, 31) providing a first (32) and second (33) X-ray beam in stereoscopic configuration onto an object (110). At least one detector (40, 41) detects the beams (32, 33) having passed through the object (110) and generates detection data. This data is processed by a phase-contrast stereoscopic reconstruction processor (60) to generate two 2D phase-contrast images (80, 82) of the object (110) collectively forming a stereoscopic image pair or stereo image providing high resolution 3D representation of the object (110).

Abstract: A stereoscopic phase-contrast X-ray imaging system (1) comprises a stereoscopic radiation head (20) having at least one X-ray source (30, 31) providing a first (32) and second (33) X-ray beam in stereoscopic configuration onto an object (110). At least one detector (40, 41) detects the beams (32, 33) having passed through the object (110) and generates detection data. This data is processed by a phase-contrast stereoscopic reconstruction processor (60) to generate two 2D phase-contrast images (80, 82) of the object (110) collectively forming a stereoscopic image pair or stereo image providing high resolution 3D representation of the object (110).

Abstract: The present invention relates to an arrangement and a method for amplifying high frequency RF signals having amplitude and phase variations. The objective problem of the present invention is to provide an efficient power amplifier for amplifying high frequency RF signals. The object is achieved by introducing a Signal Conditioning Device (SCD) that converts baseband signals SI and SQ into tri-states signals STI, STQ. The tri-states signals STI, STQ are time multiplexed, which results in that a single power amplifier can be used to amplify the signal on the In-phase (I) channel and the signal on the Quadrature (Q) channel. Hence, the present invention does not require a power combiner.

Abstract: A multi-bit time-delay adjuster with Radio Frequency (RF) MicroElectroMechanical (MEM) switches may be used in MultiCarrier Power Amplifiers (MCPAs) with a feed-forward linearization technique. The multi-bit time-delay adjuster makes it possible to automatically control a time-delay match with very high precision typically required in feed-forward MCPAs. A searching process for the automatic control of time-delay match is also introduced.

Abstract: In the present invention a multi-bit time-delay adjuster using Radio Frequency (RF) MicroElectroMechanical (MEM) switches is disclosed for applications in MCPAs with feed-forward linearization technique. The MEM switching system used in the multi-bit time-delay adjuster makes it possible to automatic control the time-delay match with very high precision required in feed-forward MultiCarrier Power Amplifiers (MCPA), instead of a manual trimming process. A searching process suitable for the automatic control of time-delay match is also introduced and demonstrated by an example of a four-bit time-delay adjuster.

Abstract: The present invention relates to an arrangement and a method for amplifying high frequency RF signals having amplitude and phase variations. The objective problem of the present invention is to provide an efficient power amplifier for amplifying high frequency RF signals. The object is achieved by introducing a Signal Conditioning Device (SCD) that converts baseband signals SI and SQ into tri-states signals STI, STQ. The tri-states signals STI, STQ are time multiplexed, which results in that a single power amplifier can be used to amplify the signal on the In-phase (I) channel and the signal on the Quadrature (Q) channel. Hence, the present invention does not require a power combiner.

Abstract: An inductor for microwave frequencies has a substantially planar structure and is constructed of a transmission line designed as a linear microstrip element made of a central line comprising normal electrically conducting material, such as a suitable metal. The microstrip element has a width which is varied by making areas at sides of the central line superconducting. By changing the effective width of the microstrip, the inductance of the microstrip is changed accordingly. The areas at the sides of the microstrip element in the non-superconducting state may have some electrical conductivity. However, because they contact the central metal conductor only at a very narrow edge, instead of contacting it at a large surface, the side superconducting areas do not significantly affect the transmission characteristics of the transmission path when the superconducting areas are in the normal state.

Abstract: A low-pass or band-rejection filter for microwave frequencies has a substantially planar structure and is constructed of a transmission line having inductor portions and wider capacitance portions. The inductor portions are designed as linear microstrip elements having widths being varied by making areas at the sides of the linear elements superconducting. In changing the widths of the transmission line also the inductances thereof are changed accordingly. The areas at the sides of the microstrip elements include rather narrow areas located directly at the central, normal metal conductor. These narrow areas have in the non-superconducting state some electrical conductivity which can be small but still not quite insignificant in relation to that of the metal conductor.

Abstract: An inductor for microwave frequencies has a substantially planar structure and is constructed of a transmission line designed as a linear microstrip element made of a central line comprising normal electrically conducting material, such as a suitable metal. The microstrip element has a width which is varied by making areas at sides of the central line superconducting. In changing the effective width of the microstrip the inductance thereof is changed accordingly. The areas at the sides of the microstrip element are located directly at the central, normal metal conductor. These areas have in the non-superconducting state some electrical conductivity which can be rather low but owing to the fact that they contact the normal central metal conductor only at a very narrow edge instead of contacting it at a large surface they do not significantly affect the transmission characteristics of the transmission path when the superconducting areas are in their normal state.

Abstract: An inductance device has first and second terminals and two conductors. Each conductor forms a loop between the terminals such that a current provided to the first terminal is divided between the conductors. Each current generates a magnetic field. The conductors are disposed such that the combined magnetic field generated by the conductor currents in a space between the conductors is greater than the magnetic field generated by each of the conductors in that space.