Abstract: A bisphenol A derivative, a preparation method therefor and use thereof in photolithography are provided. The compounds feature simple molecular structure, controllable molecular weight, simple synthesis steps, and relatively high thermal stability. They do not precipitate during baking and are not easily denatured during photolithography. The negative molecular glass photoresists have good film-forming property, high thermal stability, less proneness to properties varying during storage, and low viscosity, no need for additional solvents for dilution during use. After exposure at UV wavelength of 365 nm, the exposed pattern shows high contrast, excellent resolution and good sensitivity, and can present the lithographic line width of 3.5 ?m.

Abstract: An electronic storage system is provided. The system includes a housing, securable units within the housing, a kiosk to assign securable units to users and to provide the users with access credentials for accessing assigned securable units, and user portals within the housing and separate from the kiosk. Each user portal permits access to one or more of the securable units in accordance with access credentials entered into the portal. Each user portal is also operable to allow users to transfer rentals of assigned securable devices to other electronic storage systems. The system also permits access to assigned securable devices in accordance with access credentials received via text or SMS messages or via applications executing on a computer, NFC device, or smart device, such as a smart phone or tablet.

Abstract: An electronic storage system is provided. The system includes a housing, securable units within the housing, a kiosk to assign securable units to users and to provide the users with access credentials for accessing assigned securable units, and user portals within the housing and separate from the kiosk. Each user portal permits access to one or more of the securable units in accordance with access credentials entered into the portal. Each user portal is also operable to allow users to transfer rentals of assigned securable devices to other electronic storage systems. The system also permits access to assigned securable devices in accordance with access credentials received via text or SMS messages or via applications executing on a computer, NFC device, or smart device, such as a smart phone or tablet.

Abstract: An electronic storage system is provided. The system includes a housing, securable units within the housing, a kiosk to assign securable units to users and to provide the users with access credentials for accessing assigned securable units, and user portals within the housing and separate from the kiosk. Each user portal permits access to one or more of the securable units in accordance with access credentials entered into the portal. Each user portal is also operable to allow users to transfer rentals of assigned securable devices to other electronic storage systems. The system also permits access to assigned securable devices in accordance with access credentials received via text or SMS messages or via applications executing on a computer, NFC device, or smart device, such as a smart phone or tablet.

Abstract: The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.

Abstract: The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.