Abstract: An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz, or rock crystal; and a light-emitting layer 22 that is provided on the substrate 21 and that generates ultraviolet light upon receiving an electron beam. The light-emitting layer 22 includes powdered or granular Pr:LuAG crystals. By using such a light-emitting layer 22 as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.

Abstract: An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz or rock crystal; and a Pr:LuAG polycrystalline film 22, provided on the substrate 21, that generates ultraviolet light upon receiving an electron beam. By using a Pr:LuAG polycrystal as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.

Abstract: An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz, or rock crystal; and a light-emitting layer 22 that is provided on the substrate 21 and that generates ultraviolet light upon receiving an electron beam. The light-emitting layer 22 includes powdered or granular Pr:LuAG crystals. By using such a light-emitting layer 22 as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.

Abstract: An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz or rock crystal; and a Pr:LuAG polycrystalline film 22, provided on the substrate 21, that generates ultraviolet light upon receiving an electron beam. By using a Pr:LuAG polycrystal as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.

Abstract: A silicon light-emitting element includes a first conductivity type silicon substrate 10 having a first surface 10a and a second surface 10b on a side opposite to the first surface 10a, an insulating film 11 provided on the first surface 10a of the silicon substrate 10, a silicon layer 12 provided on the insulating film 11, and having a second conductivity type different from the first conductivity type, a first electrode 13 provided on the silicon layer 12, and a second electrode 14 provided on the second surface of the silicon substrate, and the silicon substrate 10 has a carrier concentration of 5×1015cm?3 to 5×1018cm?3, the silicon layer 12 has a carrier concentration of 1×1017cm?3 to 5×1019cm?3, and that is larger by one digit or more than the carrier concentration of the silicon substrate 10, and the insulating film 11 has a film thickness of 0.3 nm to 5 nm. Accordingly, a silicon light-emitting element that is applicable to a silicon photonics light source is realized.

Abstract: A semiconductor is provided with: a silicon substrate 2a of a first conductivity type, including a first surface S1a and a second surface S2a; a silicon layer 4a of a second conductivity type, arranged on the first surface S1a of the silicon substrate 2a, including a third surface S3a opposite a junction surface with the silicon substrate 2a; a first electrode 12a arranged on the second surface S2a; a second electrode 14a arranged on the third surface S3a; and an argon added area 6a formed in a semiconductor area formed of the silicon substrate 2a and the silicon layer 4a. The argon added area 6a includes an area indicating an argon concentration of a minimum of 1×1018 cm?3 and a maximum of 2×1020 cm?3.

Abstract: A silicon light-emitting element includes a first conductivity type silicon substrate 10 having a first surface 10a and a second surface 10b on a side opposite to the first surface 10a, an insulating film 11 provided on the first surface 10a of the silicon substrate 10, a silicon layer 12 provided on the insulating film 11, and having a second conductivity type different from the first conductivity type, a first electrode 13 provided on the silicon layer 12, and a second electrode 14 provided on the second surface of the silicon substrate, and the silicon substrate 10 has a carrier concentration of 5×1015cm?3 to 5×1018cm?3, the silicon layer 12 has a carrier concentration of 1×1017cm?3 to 5×1019cm?3, and that is larger by one digit or more than the carrier concentration of the silicon substrate 10, and the insulating film 11 has a film thickness of 0.3 nm to 5 nm. Accordingly, a silicon light-emitting element that is applicable to a silicon photonics light source is realized.

Abstract: A method for manufacturing a silicon device includes steps of: forming a silicon layer 4a that indicates a second conductivity type on a first surface S1a of a silicon substrate 2a that indicates a first conductivity type; and exposing, after the step, a third surface S3a of the silicon layer 4a for a period of a minimum of 30 minutes and a maximum of 6 hours to an argon-containing atmosphere which is adjusted to temperatures of a minimum of 400° C. and a maximum of 900° C. and pressures of a minimum of 4 MPa and a maximum of 200 MPa.

Abstract: A semiconductor is provided with: a silicon substrate 2a of a first conductivity type, including a first surface S1a and a second surface S2a; a silicon layer 4a of a second conductivity type, arranged on the first surface S1a of the silicon substrate 2a, including a third surface S3a opposite a junction surface with the silicon substrate 2a; a first electrode 12a arranged on the second surface S2a; a second electrode 14a arranged on the third surface S3a; and an argon added area 6a formed in a semiconductor area formed of the silicon substrate 2a and the silicon layer 4a. The argon added area 6a includes an area indicating an argon concentration of a minimum of 1×1018 cm?3 and a maximum of 2×1020 cm?3.

Abstract: A method for manufacturing a silicon device includes steps of: forming a silicon layer 4a that indicates a second conductivity type on a first surface S1a of a silicon substrate 2a that indicates a first conductivity type; and exposing, after the step, a third surface S3a of the silicon layer 4a for a period of a minimum of 30 minutes and a maximum of 6 hours to an argon-containing atmosphere which is adjusted to temperatures of a minimum of 400° C. and a maximum of 900° C. and pressures of a minimum of 4 MPa and a maximum of 200 MPa.

Abstract: A light emitting device (10) comprises a ?-FeSi2 film (2) provided on a front surface of a Si substrate (1), first electrode (3) provided on a rear-surface side of the Si substrate (1), second electrodes 4 provided on a front-surface side of the ?-FeSi2 film (2). The ?-FeSi2 film (2) has the conductivity different from that of Si substrate (1). Between the Si substrate (1) and ?-FeSi2 film (2), a pn junction is formed. The ?-FeSi2 film (2) functions as a luminescent layer. Its luminescence properties are not influenced very much by the type and purity of the substrate.