Abstract: Methods of forming semiconductor devices including an air gap extending through at least one metal layer, and the semiconductor device so formed, are disclosed. The air gap has a lower portion that contacts a silicide layer over a gate body of a transistor gate and has an inverted T-shape over the gate body. The air gap reduces the capacitance between a transistor gate in a device layer and adjacent wires and vias used to contact the source and drain of the transistor.

Abstract: Provided are a live broadcast message display method and apparatus. The method comprises: when it is detected that a time interval between the current time and the time when a live broadcast message is last acquired is equal to a target message acquisition interval, sending a present message acquisition request to a server, and receiving live broadcast messages returned by the server and an updated target message acquisition interval; determining a message rolling rate according to the updated target message acquisition interval and the number of live broadcast messages returned by the server; and according to the determined message rolling rate, displaying the live broadcast messages in a rolling manner in a display area.