Patents by Inventor Shueh Lin Yau

Shueh Lin Yau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Etching method using NH.sub.4 F solution to make surface of silicon smooth in atomic order
    Patent number: 5650043
    Abstract: A silicon substrate is etched by dipping it in a NH.sub.4 F solution while charging it with a potential more negative than an open-circuit potential. The NH.sub.4 F solution preferably has NH.sub.4 F concentration of 10M or less. The potential applied to the silicon substrate is controlled within the range of from the open-circuit potential to a more negative potential by -1.5 V vs. SCE. Since the etched silicon substrate has flatness in atomic order, it is suitable for the precise fabrications to manufacture high-density ir high-functional semiconductor devices.
    Type: Grant
    Filed: May 25, 1995
    Date of Patent: July 22, 1997
    Assignees: Research Development Corporation of Japan, Kazutoshi Kaji, Toshihiko Sakuhara
    Inventors: Kazutoshi Kaji, Shueh Lin Yau, Kingo Itaya, Toshihiko Sakuhara