Abstract: A light-emitting diode for plant illumination is provided. The light-emitting diode has a multiple quantum well structure for generating a light beam with a broadband blue-violet light spectrum. The broadband blue-violet light spectrum has a first peak and a second peak within a range from 410 nm to 450 nm, a wavelength value of the second peak is greater than a wavelength value of the first peak, and a difference between the wavelength value of the second peak and the wavelength value of the first peak ranges from 5 nm to 30 nm. The broadband blue-violet light spectrum generated by the light-emitting diode can better match a photosynthetic action spectrum of plants.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

Abstract: A light-emitting device is provided. The light-emitting device generates a white light and includes at least one light-emitting diode. The at least one light-emitting diode generates a light beam with a broadband blue spectrum and includes a first semiconductor layer, a second semiconductor layer and a multiple quantum well structure. The multiple quantum well structure is located between the first semiconductor layer and the second semiconductor layer, and includes well layers and barrier layers. The well layers include a first well layer, a second well layer and third well layers different in indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

Abstract: A light-emitting diode chip is provided and includes: a first doping-type semiconductor layer, a second doping-type semiconductor layer, and a multiple quantum well structure layer formed between the first doping-type semiconductor layer and the second doping-type semiconductor layer. The multiple quantum well structure layer includes multiple first quantum well structures and at least one second quantum well structure stacked in a distance direction of the first and second doping-type semiconductor layers. The first quantum well structures are used to emit first color light, and the at least second well structure is used to emit second color light different from the first color light. A total number of well layer of the at least one second quantum well structure is 1/15˜? of a total number of well layer of the first quantum well structures located between the at least one second quantum well structure and the second doping-type semiconductor layer.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a substrate, an epitaxial blocking layer, and a light-emitting epitaxial structure. The substrate has a surface, in which the surface includes a plurality of protruding parts and a plurality of recess parts relative to the protruding parts. The epitaxial blocking layer disposed on the substrate covers the recess parts and exposes the protruding parts. The light-emitting epitaxial structure disposed on the substrate is connected to the protruding parts and is disposed above the recess parts. The light-emitting epitaxial structure is formed by using the protruding parts as a growth surface thereof so as to have a better crystalline quality.

Abstract: A light-emitting module and a light-emitting diode are provided. The light-emitting diode includes an epitaxial light-emitting structure to generate a light beam with a broadband blue spectrum. A spectrum waveform of the broadband blue spectrum has a full width at half maximum (FWHM) larger than or equal to 30 nm. The spectrum waveform has a plurality of peak inflection points, and a difference between two wavelength values to which any two adjacent ones of the peak inflection points respectively correspond is less than or equal to 18 nm.

Abstract: A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes a substrate, an epitaxial blocking layer, and a light-emitting epitaxial structure. The substrate has a surface, in which the surface includes a plurality of protruding parts and a plurality of recess parts relative to the protruding parts. The epitaxial blocking layer disposed on the substrate covers the recess parts and exposes the protruding parts. The light-emitting epitaxial structure disposed on the substrate is connected to the protruding parts and is disposed above the recess parts. The light-emitting epitaxial structure is formed by using the protruding parts as a growth surface thereof so as to have a better crystalline quality.

Abstract: A liquid-metal organic compound supply system which is applicable to a MOVCD processing apparatus is provided, including a first bottle body accommodating a high purity liquid-metal organic compound, a first outlet pipe of the first bottle body connects to the MOVCD processing apparatus; a second bottle body accommodating a high purity liquid-metal organic compound, a connecting pipe connecting between a first inlet pipe of the first bottle body and a second outlet pipe of the second bottle body; and a liquid level detecting module comprising a liquid level gauge detecting liquid level of the first bottle body and a display unit displaying liquid level of the first bottle body, and the liquid level gauge being disposed in the first bottle body, the display unit being electrically connected to the liquid level gauge. Besides, the system also decreases the manufacturing and packing costs of trimethyl gallium.

Abstract: Disclosed is a liquid-metal organic compound supply system which is applicable to a metal organic chemical vapor deposition (MOVCD) processing apparatus, including disposing a first bottle body in a thermostat, a second bottle body and a three-way valve in room temperature. Wherein a first connecting end of the three-way valve and a first outlet pipe of the first bottle body connect to the MOVCD processing apparatus, a second connecting end connects to a second inlet pipe of the second bottle body and a third connecting end connects to a first inlet pipe of the first bottle body and a second outlet pipe of the second bottle body. When the present invention is applied to the MOCVD manufacturing process, it prolongs usage period of trimethyl gallium, decreases replacement frequency and increases utilization ratio. Besides, the present invention also decreases the manufacturing and packing costs of trimethyl gallium.