Abstract: The present invention provides a colossal magnetoresistant sensor, and in particular a colossal magnetoresistant sensor capable of responding to the low fields emanating from the recording media. The recording media typically emanates a low field on the order of 20 Oe which is insufficient to result in a significant change in resistance in a CMR layer of material. The colossal magnetoresistant sensor is comprised of a first magnetic layer; a colossal magnetoresistant layer and a second magnetic layer, where the colossal magnetoresistant layer is positioned between the first magnetic layer and a second magnetic layer. The first and second magnetic layers surrounding the colossal magnetoresistant layer control the field through and therefore the resistance of the CMR layer.