Patents by Inventor Shufeng Bai

Shufeng Bai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10296681
    Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
    Type: Grant
    Filed: May 17, 2018
    Date of Patent: May 21, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Guangqing Chen, Shufeng Bai, Eric Richard Kent, Yen-Wen Lu, Paul Anthony Tuffy, Jen-Shiang Wang, Youping Zhang, Gertjan Zwartjes, Jan Wouter Bijlsma
  • Publication number: 20180268093
    Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
    Type: Application
    Filed: May 17, 2018
    Publication date: September 20, 2018
    Applicant: ASML Netherlands B.V.
    Inventors: Guangqing CHEN, Shufeng Bai, Eric Richard Kent, Yen-Wen Lu, Paul Anthony Tuffy, Jen-Shiang Wang, Youping Zhang, Gertjan Zwartjes, Jan Wouter Bijlsma
  • Patent number: 10007744
    Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: June 26, 2018
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Guangqing Chen, Shufeng Bai, Eric Richard Kent, Yen-Wen Lu, Paul Anthony Tuffy, Jen-Shiang Wang, Youping Zhang, Gertjan Zwartjes, Jan Wouter Bijlsma
  • Patent number: 9494874
    Abstract: A system to, and a method to, select a metrology target for use on a substrate including performing a lithographic simulation for a plurality of points on a process window region for each proposed target, identifying a catastrophic error for any of the plurality of points for each proposed target, eliminating each target having a catastrophic error at any of the plurality of points, performing a metrology simulation to determine a parameter over the process window for each target not having a catastrophic error at any of the plurality of points, and using the one or more resulting determined simulated parameters to evaluate target quality.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: November 15, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Guangqing Chen, Jen-Shiang Wang, Shufeng Bai
  • Publication number: 20160140267
    Abstract: Methods and systems for automatically generating robust metrology targets which can accommodate a variety of lithography processes and process perturbations. Individual steps of an overall lithography process are modeled into a single process sequence to simulate the physical substrate processing. That process sequence drives the creation of a three-dimensional device geometry as a whole, rather than “building” the device geometry element-by-element.
    Type: Application
    Filed: November 13, 2015
    Publication date: May 19, 2016
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Guangqing CHEN, Shufeng BAI, Eric Richard KENT, Yen-Wen LU, Paul Anthony TUFFY, Jen-Shiang WANG, Youping ZHANG, Gertjan ZWARTJES, Jan Wouter BIJLSMA
  • Publication number: 20150185626
    Abstract: A system to, and a method to, select a metrology target for use on a substrate including performing a lithographic simulation for a plurality of points on a process window region for each proposed target, identifying a catastrophic error for any of the plurality of points for each proposed target, eliminating each target having a catastrophic error at any of the plurality of points, performing a metrology simulation to determine a parameter over the process window for each target not having a catastrophic error at any of the plurality of points, and using the one or more resulting determined simulated parameters to evaluate target quality.
    Type: Application
    Filed: December 19, 2014
    Publication date: July 2, 2015
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Guangqing CHEN, Jen-Shiang Wang, Shufeng Bai
  • Patent number: 8192669
    Abstract: This invention relates to the fabrication of large area nanoimprint molds having complex patterns with minimal or no use of direct-writing, such as electron beam lithography, ion, laser beam, or mechanical beam lithography. This can be accomplished by forming a pattern of simple nanoscale features and converting the simple features into more complex nanoscale features by a process comprising shadow deposition. The process may also include steps of uniform deposition, etching and smoothing depending on the shape of the complex features.
    Type: Grant
    Filed: May 27, 2009
    Date of Patent: June 5, 2012
    Inventors: Stephen Y. Chou, Can Peng, Wendi Li, Shufeng Bai
  • Patent number: 7317739
    Abstract: In accordance with the invention, a mode-locked laser comprises an optical gain medium disposed within an optical cavity formed by a first reflector and a wavelength selective second reflector to achieve mode-locking operation. Advantageously, the wavelength reflective reflector is a two-dimensional subwavelength resonant grating. The resulting laser is compact, tunable, reliable and inexpensive. It provides high side mode suppression and high output power.
    Type: Grant
    Filed: March 17, 2003
    Date of Patent: January 8, 2008
    Assignee: Princeton University
    Inventors: Stephen Y. Chou, Shufeng Bai, Allan Chang, Hua Tan, Jian Jim Wang
  • Publication number: 20040008742
    Abstract: In accordance with the invention, a mode-locked laser comprises an optical gain medium disposed within an optical cavity formed by a first reflector and a wavelength selective second reflector to achieve mode-locking operation. Advantageously, the wavelength reflective reflector is a two-dimensional subwavelength resonant grating. The resulting laser is compact, tunable, reliable and inexpensive. It provides high side mode suppression and high output power.
    Type: Application
    Filed: March 17, 2003
    Publication date: January 15, 2004
    Inventors: Stephen Y. Chou, Shufeng Bai, Allan Chang, Hua Tan, Jian Jim Wang