Abstract: The resistive material for sensing current contains: metal particles selected from a group consisting of nichrome, copper-manganese, and copper-nickel; insulating particles selected from a group consisting of alumina, aluminum nitride, silicon nitride, and zirconia; and titanium oxide.

Abstract: A shunt resistor 10, 110 includes a flat resistive element 11; a first electrode block 12 that is made of a conductive metal material and is laminated on a lower surface 11a of the resistive element 11; and a second electrode block 13, 113 that is made of a conductive metal material and is laminated on an upper surface 11b of the resistive element 11, in which the second electrode block 13, 113 is a block body including an electrode portion 14 connected to the resistive element 11 and an extension portion 15, 115 extending downward from a side surface of the electrode portion 14.

Abstract: The present invention relates to a jumper element, a shunt resistor apparatus, and a method of adjusting characteristic of a shunt resistor apparatus for current detection. The jumper element (10) for constituting the shunt resistor apparatus for current detection is made of conductive metal material. The jumper element (10) includes: a body structure (11) that can be coupled to a resistance element (5) constituting a part of the shunt resistor apparatus; and a protrusion (12) formed on a side portion of the body structure (11), wherein the protrusion (12) is located so as not to overlap the resistor element (5).

Abstract: The mounting area for an electronic component and a resistor for current detection is reduced. A current detection resistor for detecting current includes a plate-like resistive body, and a first electrode and an opposite second electrode which are stacked in a thickness direction of the resistive body and are disposed so as to sandwich the resistive body. The first electrode has a groove portion.

Abstract: A resistive material for sensing current contains particles having an electrically insulating property and a metal body having a three-dimensional network enclosing the particles, and a ratio of the metal body to the whole of the resistive material is 30 vol % or more and 80 vol % or less.

Abstract: The resistive material for sensing current contains: metal particles selected from a group consisting of nichrome, copper-manganese, and copper-nickel; insulating particles selected from a group consisting of alumina, aluminum nitride, silicon nitride, and zirconia; and titanium oxide.

Abstract: A shunt resistor 10, 110 includes a flat resistive element 11; a first electrode block 12 that is made of a conductive metal material and is laminated on a lower surface 11a of the resistive element 11; and a second electrode block 13, 113 that is made of a conductive metal material and is laminated on an upper surface 11b of the resistive element 11, in which the second electrode block 13, 113 is a block body including an electrode portion 14 connected to the resistive element 11 and an extension portion 15, 115 extending downward from a side surface of the electrode portion 14.

Abstract: A resistor according to the present disclosure includes an insulated substrate, a resistive layer formed of a resistance body material and a bonding layer for bonding the insulated substrate and the resistive layer, wherein the resistor is configured so that a ratio of a sheet resistance of the bonding layer to a sheet resistance of the resistive layer is 100 or more.

Abstract: A resistive material for sensing current contains particles having an electrically insulating property and a metal body having a three-dimensional network enclosing the particles, and a ratio of the metal body to the whole of the resistive material is 30 vol % or more and 80 vol % or less.

Abstract: A resistor according to the present disclosure includes an insulated substrate, a resistive layer formed of a resistance body material and a bonding layer for bonding the insulated substrate and the resistive layer, wherein the resistor is configured so that a ratio of a sheet resistance of the bonding layer to a sheet resistance of the resistive layer is 100 or more.