Abstract: An imaging device includes a substrate, photodiode semiconductor layers on the substrate, an upper electrode and a lower electrode sandwiching the photodiode semiconductor layers, and a non-light-transmissive line included in a layer upper than the upper electrode, defining the substrate as the lowermost layer. The photodiode semiconductor layers include a first semiconductor layer, and a second semiconductor layer located between the first semiconductor layer and the lower electrode. The photodiode semiconductor layers have a groove in which the first semiconductor layer is removed in a region covered with the non-light-transmissive line in a planar view. A region overlapping the groove in the planar view does not include the upper electrode. The region overlapping the groove in the planar view includes a part of the second semiconductor layer and a part of the lower electrode.

Abstract: A photodiode array includes a plurality of elemental devices arrayed on a substrate. Each of the plurality of elemental devices includes an upper electrode, a lower electrode, a photoelectric conversion region between the upper electrode and the lower electrode, a lower conductive part located lower than the lower electrode; and an insulating layer between the lower electrode and the lower conductive part. The lower conductive part at least partially overlaps the lower electrode with the insulating layer interposed therebetween when viewed planarly.

Abstract: A device includes a first element having rectification characteristics that allow electric current to flow from an upper electrode to a lower electrode, an n-channel thin film transistor, and a control electrode. The n-channel thin film transistor includes a semiconductor film, a gate electrode, a first signal electrode, and a second signal electrode. The control electrode faces the gate electrode with the semiconductor film interposed therebetween. The second signal electrode is connected with the lower electrode. The control electrode is connected with the lower electrode. At least a part of a first channel end on the first signal electrode side of the semiconductor film is located within a region of the control electrode, when viewed planarly. A second channel end on the second signal electrode side of the semiconductor film is distant from the control electrode, when viewed planarly.

Abstract: An image sensor includes: a switching element disposed on a substrate; a photoelectric conversion element connected to the switching element; a first protective film directly covering the photoelectric conversion element; and a first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film, wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element, wherein the first organic film has a first covering portion at an end of the first organic film, wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, and wherein the first organic film covers only the first end portion of the photoelectric conversion element.

Abstract: A device includes a first element having rectification characteristics that allow electric current to flow from an upper electrode to a lower electrode, an n-channel thin film transistor, and a control electrode. The n-channel thin film transistor includes a semiconductor film, a gate electrode, a first signal electrode, and a second signal electrode. The control electrode faces the gate electrode with the semiconductor film interposed therebetween. The second signal electrode is connected with the lower electrode. The control electrode is connected with the lower electrode. At least a part of a first channel end on the first signal electrode side of the semiconductor film is located within a region of the control electrode, when viewed planarly. A second channel end on the second signal electrode side of the semiconductor film is distant from the control electrode, when viewed planarly.

Abstract: An image sensor includes: a switching element disposed on a substrate; a photoelectric conversion element connected to the switching element; a first protective film directly covering the photoelectric conversion element; and a first organic film formed at a layer above the switching element, the first organic film being in contact with the first protective film, wherein the first organic film covers a first end portion of the photoelectric conversion element, the first end portion being at least a part of an end portion of the photoelectric conversion element, wherein the first organic film has a first covering portion at an end of the first organic film, wherein the first covering portion covers the first end portion, wherein the first covering portion is inclined down towards the photoelectric conversion element, and wherein the first organic film covers only the first end portion of the photoelectric conversion element.

Abstract: A semiconductor device includes: a thin film transistor including an oxide semiconductor layer that is formed in an island shape and contains at least one or more elements among indium, gallium, zinc, and tin and oxygen, a source and a drain that are connected to the oxide semiconductor layer; a protective film of at least one or more layers that is formed in an upper layer of the oxide semiconductor layer, and an opening portion that is disposed in the protective film and has a position and a size for including a channel region or a back channel region of the oxide semiconductor layer; and a photodiode that is disposed in an upper layer upper than the oxide semiconductor layer of the thin film transistor and includes a hydrogenated amorphous silicon layer.

Abstract: A semiconductor device includes: a thin film transistor including an oxide semiconductor layer that is formed in an island shape and contains at least one or more elements among indium, gallium, zinc, and tin and oxygen, a source and a drain that are connected to the oxide semiconductor layer; a protective film of at least one or more layers that is formed in an upper layer of the oxide semiconductor layer, and an opening portion that is disposed in the protective film and has a position and a size for including a channel region or a back channel region of the oxide semiconductor layer; and a photodiode that is disposed in an upper layer upper than the oxide semiconductor layer of the thin film transistor and includes a hydrogenated amorphous silicon layer.