Abstract: In a crystallization process of an amorphous semiconductor film, a first crystalline semiconductor film having crystalline regions, and dotted with amorphous regions within the crystalline regions, is obtained by performing heat treatment processing after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. The amorphous regions are kept within a predetermined range by regulating the heat treatment conditions at this point. Laser annealing is performed on the first crystalline semiconductor film, to form a second crystalline semiconductor film. Electrical characteristics for a TFT manufactured based on the second crystalline semiconductor film can be obtained having less dispersion.

Abstract: A method of manufacturing a crystalline silicon base semiconductor thin film on a substrate, includes the steps of forming a thin film primarily made of silicon on the substrate by forming plasma of a film material gas containing at least a silicon base gas at the vicinity of the substrate; and crystallizing the silicon in the thin film primarily made of the silicon by emitting excited particles produced from an excited particle material gas to the substrate. At least one of the film material gas and the excited particle material gas contains an impurity gas for forming the silicon semiconductor, and thereby the crystalline silicon base semiconductor thin film is formed on the substrate.

Abstract: In a crystallization process of an amorphous semiconductor film, a first crystalline semiconductor film having crystalline regions, and dotted with amorphous regions within the crystalline regions, is obtained by performing heat treatment processing after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. The amorphous regions are kept within a predetermined range by regulating the heat treatment conditions at this point. Laser annealing is performed on the first crystalline semiconductor film, to form a second crystalline semiconductor film. Electrical characteristics for a TFT manufactured based on the second crystalline semiconductor film can be obtained having less dispersion.

Abstract: A thin film semiconductor device including an insulating substrate; and a structure provided on the insulating substrate and including a silicon layer containing hydrogen diffused therein and a silicon nitride layer. The insulating substrate is formed of an insulating material having a thermal expansion coefficient of 2.6.times.10.sup.-6 deg.sup.-1 or more or having a distortion point of 850.degree. C. or lower.

Abstract: A thin film semiconductor device including an insulating substrate; and a structure provided on the insulating substrate and including a silicon layer containing hydrogen diffused therein and a silicon nitride layer. The insulating substrate is formed of an insulating material having a thermal expansion coefficient of 2.6.times.10.sup.-6 deg.sup.-1 or more or having a distortion point of 850.degree. C. or lower.

Abstract: A device and a method for inputting/outputting an image are disclosed. The device includes: an image display section which selectively transmits light; and an image input section having a photodetective portion for converting part of the light which has been transmitted through the image display section and reflected from an original surface to be imaged, into an electric signal. The method is performed by using the device.

Abstract: A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.

Abstract: An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.

Abstract: A logic circuit device includes a superconductive body formed of a ceramic superconductive material. The ceramic superconductive material has random grain boundaries which act as weak couplings. The ceramic superconductive material also has a magneto-resistive property. There is at least one conductor arranged near the ceramic superconductive body in order to exert a magnetic field on the ceramic superconductive body. The ceramic superconductive body changes its resistance in response to the magnetic field generated by the conductor. The ceramic superconductive body can be used as part of a logic circuit.

Abstract: A superconductinve magneto-resistive device for use in a sensor system for sensing an external magnetic field which is formed so as to have a predetermined pattern for a current path through which a supplied current flows. The pattern includes portions formed close and parallel to each other so that magnetic fields induced by respective currents flowing through the portions can be cancelled with each other.

Abstract: A superconductive magneto-resistive device includes superconductive ceramic films having a magneto-resistive effect. In the superconductive magneto-resistive device, the superconductive ceramic films are laminated one by one, and the adjacent superconductive ceramic films are insulated by each electrical insulation film, respectively, except for one portion of each of the adjacent superconductive ceramic films, resulting in that the superconductive ceramic films are connected in series. Furthermore, a pair of electrodes is arranged on the upper-most and lower-most superconductive ceramic films.

Abstract: A superconductive apparatus has a superconductive device such as a superconductive magneto-resistive device. The superconductive device is mounted within an airtight package which is sealed to create an airtight state. Before sealing, the airtight package is evacuated to replace the internal air thereof with an inert gas.

Abstract: A contact type image sensor includes a light source for illuminating an original to be read and a substrate in which an optical fiber array member is assembled. The substrate is disposed such that one end of the optical fiber array member faces the original for transmitting a reflected light from the illuminated original therethrough. The contact type image sensor further includes a light detecting element array formed on the substrate and facing the other end of the optical fiber array member for receiving the transmitted light and converting the received light to an electrical signal. The contact type image sensor also includes a driving circuit disposed on the substrate and electrically connected to the light detecting element array for driving the light detecting element array.

Abstract: An apparatus for magnetic measurement using superconductive magneto-resistive film which is disposed in a magnetic field with the surface of the superconductive magneto-resistive film directed in parallel with the direction of the magnetic field so that the magnetic hysterisis property of the film can be avoided and the accuracy of the measurement can be much improved.

Abstract: An apparatus for observing a superconductive phenomenon is disclosed. In the apparatus, a cooling unit cools a superconductor having a threshold temperature at which the superconductor changes from the normal conductive phase to the superconductive phase, and a magnetic field is applied thereto. A current is supplied to the superconductor, and there are clearly observed a phenomenon on which an electric resistance thereof becomes zero at a threshold temperature thereof, a phenomenon on which the superconductor changes from the normal conductive phase to the superconductive phase at a threshold current to be supplied thereto, and a phenomenon on which the super conductor changes from the normal conductive phase to the superconductive phase at a threshold magnetic field to be applied thereto.

Abstract: A superconductive magneto-resistive device for use in a sensor system for sensing an external magnetic field which is formed so as to have a predetermined pattern for a current path through which a supplied current flows. The pattern includes portions formed close and parallel to each other so that magnetic fields induced by respective currents flowing through the portions can be cancelled with each other.

Abstract: A TFTs fabricating process practicable at a low temperature, which includes the steps of forming a multi-layer body on a substrate, the multi-layer body including a semiconductor layer, a gate insulating layer and a lower thin layer, patterning the multi-layer body into islands, thereby removing the other portions of the multi-layer body, forming an insulating layer on the sides of the island-patterned multi-layered portion by etching at a selective ratio between the constituents of the insulating layer and the lower thin layer, forming an upper thin layer, and etching the upper and lower thin layers into upper and lower gate electrodes by use of one resist pattern.

Abstract: An apparatus for observing a superconductive phenomenon is disclosed. In the apparatus, a cooling unit cools a superconductor having a threshold temperature at which the superconductor changes from the normal conductive phase to the superconductive phase, and a magnetic field is applied thereto. A current is supplied to the superconductor, and there are clearly observed a phenomenon on which an electric resistance thereof becomes zero at a threshold temperature thereof, a phenomenon on which the superconductor changes from the normal conductive phase to the superconductive phase at a threshold current to be supplied thereto, and a phenomenon on which the superconductor changes from the normal conductive phase to the superconductive phase at a threshold magnetic field to be applied thereto.

Abstract: A ceramic superconductive magneto-resistive element which has weak grain boundaries is highly sensitive to weak magnetic fields. The magnetic field is measured by the use of an electronic circuit. A comparator is used for comparing an output and reference voltage of the element. When there is a difference between the output and reference voltage bias current is used to equalize these voltages.

Abstract: A logic device includes a ceramic superconducting element having magneto-resistive characteristics, and three electrodes provided adjacent the ceramic superconducting element, and constructed in such a manner that a current is applied to one of the three electrode so that a magnetic field greater than a threshold magnetic field is normally applied to the ceramic superconducting element, and the other electrodes are used for increasing and decreasing the magnetic field. A memory device includes a superconducting loop at least one portion thereof being formed by a ceramic superconducting element having grain boundaries, and an electrode provided in approximation to said ceramic superconducting element, whereby a current flowing through a portion of said superconducting loop which is other than said ceramic superconducting element can be captured in said superconducting loop by a control of a magnetic field generated by the current flowing through said electrode.