Abstract: A method for fabricating a phase change memory device uses the well-developed semiconductor process to fabricate a larger-size sacrifice beforehand, and next uses a wet etching technology to form a narrowed sacrifice layer having a smaller size, and then removes the narrowed sacrifice layer to form the desired mask pattern, whereby the method can precisely define and easily adjust a smaller-size heater and have a stable fabrication process.

Abstract: A manufacturing method of a phase change memory includes following steps. A first mask layer is formed on a dielectric layer, and a second mask layer is formed on the first mask layer. Then, the first mask layer and the second mask layer are patterned to expose a side surface of the first mask layer. A portion of the first mask layer is removed from the side surface of the first mask layer to form a columnar protrusion. After removing the second mask layer, a heating material layer is formed to conformally cover sidewalls and an upper surface of the columnar protrusion. The heating material layer on the upper surface of the columnar protrusion is removed, so as to form an annular heater from the heating material layer; and the annular heater surrounds the columnar protrusion.