Abstract: Provided are a display panel and a display device. The display panel includes a base substrate, a second transistor, and a third transistor. The second transistor includes a second active layer, a second gate, a fourth gate, a second source, and a second drain. The second active layer includes an oxide semiconductor and is disposed on one side of a first active layer facing away from the base substrate. A length of the second gate in a first direction is L2, a length of the third gate in the first direction is L3, a length of the fourth gate in the first direction is L4, a length of the fifth gate in the first direction is L5, and (L3 – L2) < (L5 – L4).

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate, a second transistor, and a third transistor. The second transistor includes a second active layer, a second gate, a fourth gate, a second source, and a second drain. The second active layer includes an oxide semiconductor and is disposed on one side of a first active layer facing away from the base substrate. In a direction perpendicular to the base substrate, a distance between the second gate and the second active layer is D2, a distance between the third gate and the third active layer is D3, a distance between the fourth gate and the second active layer is D4, and a distance between the fifth gate and the third active layer is D5; and (D4 – D2) > (D5 – D3).

Abstract: A thin-film transistor substrate includes an insulating substrate, a conductor layer including a top-gate electrode part of an oxide semiconductor thin-film transistor, an oxide semiconductor layer located lower than the top-gate electrode part and including a channel region of the oxide semiconductor thin-film transistor, and an upper insulating layer located between the conductor layer and the oxide semiconductor layer. The oxide semiconductor layer includes low-resistive regions lower in resistance than the channel region. The low-resistive regions sandwich the channel region in an in-plane direction of the insulating substrate and contain impurities to cause resistance reduction of the low-resistive regions. A concentration profile in a layering direction of the impurities to cause resistance reduction of the low resistive regions has one or more peaks. The one or more peaks are located outside the oxide semiconductor layer.

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate, a first transistor, and a second transistor. The first transistor and the second transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, and the first active layer comprises silicon; the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer comprises an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate. In a first direction perpendicular to the base substrate, a first distance between the first gate and the first active layer is D1, a second distance between the second gate and the second active layer is D2, and D1<D2.

Abstract: A thin-film transistor substrate includes an insulating substrate, a conductor layer including a top-gate electrode part of an oxide semiconductor thin-film transistor, an oxide semiconductor layer located lower than the top-gate electrode part and including a channel region of the oxide semiconductor thin-film transistor, and an upper insulating layer located between the conductor layer and the oxide semiconductor layer. The oxide semiconductor layer includes low-resistive regions lower in resistance than the channel region. The low-resistive regions sandwich the channel region in an in-plane direction of the insulating substrate and contain impurities to cause resistance reduction of the low-resistive regions. A concentration profile in a layering direction of the impurities to cause resistance reduction of the low resistive regions has one or more peaks. The one or more peaks are located outside the oxide semiconductor layer.

Abstract: A display panel and a display device are provided. The display panel includes a first substrate; a light-emitting layer; and a light modulation layer. The light-emitting layer is located between the first substrate and the light modulation layer; the light modulation layer includes a first light modulation layer and a second light modulation layer; the light-emitting layer includes at least one light-emitting element; the first light modulation layer includes at least one first opening; an orthographic projection of the first opening on the first substrate overlaps an orthographic projection of the light-emitting element on the first substrate; the second light modulation layer covers the first opening; and a refractive index of the second light modulation layer is greater than a refractive index of the first light modulation layer.

Abstract: Provided are a display panel and a preparation method thereof, and a display device. The display panel includes a base substrate; a first transistor, a second transistor, a third transistor; and a pixel circuit supplying a drive current to a display element, and a driver circuit supplying a drive signal to the pixel circuit; where the driver circuit includes the first transistor, and the pixel circuit includes the second transistor and the third transistor; and the subthreshold swing of the first transistor is SS1, and the subthreshold swing of the second transistor is SS2, where SS1<SS2.

Abstract: A display panel includes a first transistor and a second transistor, disposed over the base substrate. The first transistor includes a first active layer containing silicon, and the second transistor includes a second active layer containing an oxide semiconductor material. A shielding layer is on a side of the first active layer facing away from the base substrate, and on a side of the second active layer facing away from the base substrate. Along a projection direction perpendicular to the base substrate, the shielding layer covers the second active layer. The second transistor is included in a pixel circuit. A first driving signal line is connected to at least one of a second source, a second drain, and a second gate of the second transistor. Along the projection direction perpendicular to the base substrate, the shielding layer overlaps at least a portion of the first driving signal line.

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor and a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

Abstract: A display panel and a display device are provided. The display panel includes a base substrate, and one or more first transistors and one or more second transistors over the base substrate. A first transistor of the one or more first transistors includes a first active layer, and the first active layer contains silicon. A second transistor of the one or more second transistors includes a second active layer, and the second active layer contains an oxide semiconductor material. The display panel also includes a shielding layer. The shielding layer is disposed on a side of the first active layer facing away from the base substrate, and is disposed on a side of the second active layer facing away from the base substrate. Along a projection direction perpendicular to the base substrate, the shielding layer fully covers the second active layer.

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor and is disposed on one side of the first active layer facing away from the base substrate; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

Abstract: A display panel including a pixel circuit and a light-emitting element, the pixel circuit including a driving transistor, a data writing transistor, a threshold compensation transistor, a first reset transistor, a bias transistor, and a light-emitting control module, the data writing transistor being electrically connected to a first terminal of the driving transistor, the threshold compensation transistor being connected in series between a gate of the driving transistor and a second terminal of the driving transistor, and configured to detect and self-compensate a threshold voltage deviation of the driving transistor, the first reset transistor and the bias transistor being electrically connected to the second terminal of the driving transistor, the light-emitting control module being connected in series with the driving transistor and the light-emitting element to control whether a driving current flows through the light-emitting element, the data writing transistor and the first reset transistor having th

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.

Abstract: A display panel includes a substrate, multiple light-emitting units, multiple microlens portions, and a refractive layer. Each microlens portion is disposed on a side of each light-emitting unit facing away from the substrate. The microlens portion includes an etch-resistant material. The refractive layer is disposed at least on a side of the microlens portion facing away from the substrate. The refractive index of the refractive layer is greater than the refractive index of the microlens portion.

Abstract: Provided are a display panel and a preparation method thereof and a display device. In the display panel, at least one groove is provided in an isolation region. A groove includes a first groove division and a second groove division which are communicated with each other, and the second groove division is located on a side of the first groove division facing away from a base substrate. Along a direction pointing from a display region to a notch region, a maximum length of the first groove division is greater than a maximum length of the second groove division. A cathode is disconnected at the groove.

Abstract: A display panel includes a partition retaining wall, the partition retaining wall includes a metal partition portion and an insulating retaining wall portion, a sidewall on one side of the metal partition portion facing away from the insulating retaining wall portion includes a first recess structure, and the cathode layer is separated at the first recess structure.

Abstract: A display panel and a display device are provided. The display panel includes a first substrate; a light-emitting layer; and a light modulation layer. The light-emitting layer is located between the first substrate and the light modulation layer; the light modulation layer includes a first light modulation layer and a second light modulation layer; the light-emitting layer includes at least one light-emitting element; the first light modulation layer includes at least one first opening; an orthographic projection of the first opening on the first substrate overlaps an orthographic projection of the light-emitting element on the first substrate; the second light modulation layer covers the first opening; and a refractive index of the second light modulation layer is greater than a refractive index of the first light modulation layer.

Abstract: A display panel including a pixel circuit and a light-emitting element, the pixel circuit including a driving transistor, a data writing transistor, a threshold compensation transistor, a first reset transistor, a bias transistor, and a light-emitting control module, the data writing transistor being electrically connected to a first terminal of the driving transistor, the threshold compensation transistor being connected in series between a gate of the driving transistor and a second terminal of the driving transistor, and configured to detect and self-compensate a threshold voltage deviation of the driving transistor, the first reset transistor and the bias transistor being electrically connected to the second terminal of the driving transistor, the light-emitting control module being connected in series with the driving transistor and the light-emitting element to control whether a driving current flows through the light-emitting element, the data writing transistor and the first reset transistor having th

Abstract: Provided are a display panel and a display device. The display panel includes a display region and a non-display region. The display region surrounds at least part of the non-display region. The non-display region includes an element disposition region and a bank disposition region surrounding at least part of the element disposition region. The bank disposition region is provided with a bank. The display panel includes a substrate, the bank is disposed on a side of the substrate; a light-emitting layer located on a side of the bank facing away from the substrate and including a first light-emitting portion located in the bank disposition region; and a first light-shielding structure located in the bank disposition region and on a side of the first light-emitting portion facing the substrate. The first light-emitting portion and the first light-shielding structure at least partially overlap along the thickness direction of the display panel.

Abstract: Provided are a display panel and a display device. The display panel includes a base substrate; a first transistor, a second transistor and a third transistor, where the first transistor, the second transistor and the third transistor are formed on the base substrate, the first transistor includes a first active layer, a first gate, a first source, and a first drain, the first active layer contains silicon, the second transistor includes a second active layer, a second gate, a second source, and a second drain, and the second active layer contains an oxide semiconductor; and a first insulating layer and a second insulating layer, where the first insulating layer is disposed on one side of the second active layer facing away from the base substrate and between the second gate and the second active layer.