Patents by Inventor Shuichi Fujino

Shuichi Fujino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming the oxide superconductor thin film and laminate of the oxide superconductor thin films
    Patent number: 6074768
    Abstract: A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.
    Type: Grant
    Filed: December 16, 1998
    Date of Patent: June 13, 2000
    Assignee: Kyocera Corporation
    Inventors: Yoshinori Matsunaga, Shuichi Fujino, Akihiro Odagawa, Youichi Enomoto
  • Process for forming a-axis-on-c-axis double-layer oxide superconductor films
    Patent number: 5885939
    Abstract: A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.
    Type: Grant
    Filed: June 23, 1997
    Date of Patent: March 23, 1999
    Assignees: Kyocera Corporation, International Superconductivity Technology Center, Matsushita Electric Industrial Co., Ltd., Mitsubishi Materials Corporation
    Inventors: Yoshinori Matsunaga, Shuichi Fujino, Akihiro Odagawa, Youichi Enomoto
  • Method and apparatus for fabricating superconductor device
    Patent number: 5602079
    Abstract: A superconducting device having a superconducting film measures a characteristic such as its resonance frequency while in an environment having a temperature that is less than or equal to its superconducting transition temperature. A laser then thermally etches the superconducting film on the basis of said measurement in the environment having a temperature that is less than or equal to a superconducting transition temperature.
    Type: Grant
    Filed: June 6, 1994
    Date of Patent: February 11, 1997
    Assignees: International Superconductivity Technology Center, Kawasaki Jukogyo Kabushiki Kaisha, NEC Corporation, Mitsubishi Materials Corporation
    Inventors: Tsuyoshi Takenaka, Katsumi Suzuki, Shuichi Fujino, Youichi Enomoto
  • Method for manufacturing an oxide superconductor thin film and a target for use in the method
    Patent number: 5413988
    Abstract: An oxide superconductor thin film of Y.sub.1.+-..alpha. Ba.sub.2.+-..beta. Cu.sub.3.+-..gamma. O.sub.7-.delta. with a smooth surface having a low density of particles being generated without decreasing superconductivity is produced by the steps of applying a pulsed laser beam to the target formed of an oxide material having an apparent density of 95% or more, substantially composed of Y.sub.1.+-..alpha. Ba.sub.2.+-..beta. Cu.sub.3.+-..gamma. O.sub.7-.delta., which is obtained from a molded body of an amorphous powder by subjecting it to partial melting, followed by gradual cooling, depositing and accumulating an irradiated and evaporated oxide material of the target on a substrate.
    Type: Grant
    Filed: April 13, 1994
    Date of Patent: May 9, 1995
    Assignees: International Superconductivity Technology Center, Mitsubishi Materials Corporation
    Inventors: Kunihiko Hayashi, Shuichi Fujino, Youichi Enomoto, Shoji Tanaka
  • Superconductor containing internal stress absorber
    Patent number: 4929597
    Abstract: A superconductor according to the present invention contains an internal stress absorbing substance of a copper oxide and/or a barium oxide distributed over the superconductive oxide, so that the superconductor is free from cracks due to thermal stresses produced in a heat treatment.
    Type: Grant
    Filed: March 27, 1989
    Date of Patent: May 29, 1990
    Assignee: Mitsubishi Metal Corporation
    Inventors: Takuo Takeshita, Tadashi Sugihara, Shuichi Fujino