Abstract: A semiconductive ceramic composition for a boundary insulation type semiconductive ceramic capacitor capable of causing the capacitor to exhibit increased dielectric constant, satisfactory frequency and temperature characteristics, and decreased dielectric loss. The composition includes a SrTiO.sub.3 base component and a minor component consisting of CaTiO.sub.3, Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5. The composition may further contain MnO and SiO.sub.2, which contribute to an increase in insulation resistance of the capacitor and enlargement of an appropriate range of a (SrO+CaO)/TiO.sub.2, respectively. Also, a composition includes a SrTiO.sub.3 base component and a minor component consisting of CaTiO.sub.3, BaTiO.sub.3, Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5.

Abstract: A semiconductive ceramic composition for a reduction reoxidation type semiconductive ceramic capacitor capable of increasing capacitor, dielectric strength of the capacitor and improving temperature characteristics of the capacitor. The composition includes a BaTIO.sub.3 base component and a minor component consisting of Nb and Ce. Nb and Ce are present in amounts of 0.2 to 3.0 mol % on Nb.sub.2 O.sub.5 and CeO.sub.2 bases. Addition of Co and the like increases insulation resistance and D.C. breakdown voltage of the capacitor and further improves temperature characteristics of the capacitor.

Abstract: A semiconductive ceramic composition capable of exhibiting excellent electrical and physical characteristics sufficient to be used for a boundary-layer type semiconductive ceramic capacitor and such a capacitor capable of being increased in dielectric constant and insulation resistance and exhibiting excellent solderability and tensile strength of electrodes. The composition includes a SrTiO.sub.3 base material and an additive for semiconductivity consisting of Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5. The Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 each are present in an amount of 0.1 to 0.4 mol % based on the composition. The capacitor includes a semiconductive ceramic body formed of the composition, a first conductive layer formed on each of both surfaces of the body and a second conductive layer formed on the first conductive layer. A process for manufacturing the capacitor is also provided.

Abstract: A semiconductive ceramic composition capable of exhibiting excellent electrical and physical characteristics sufficient to be used for a boundary-layer type semiconductive ceramic capacitor and such a capacitor capable of being increased in dielectric constant and insulation resistance and exhibiting excellent solderability and tensile strength of electrodes. The composition includes a SrTiO.sub.3 base material and an additive for semiconductivity consisting of Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5. The Y.sub.2 O.sub.3 and Nb.sub.2 O.sub.5 each are present in an amount of 0.1 to 0.4 mol % based on the composition. The capacitor includes a semiconductive ceramic body formed of the composition, a first conductive layer formed on each of both surfaces of the body and a second conductive layer formed on the first conductive layer. A process for manufacturing the capacitor is also provided.