Abstract: An information processing device has a control unit that acquires information relating to a fluctuation of power consumed by an electrical product operating around a user, and that estimates a product consumed by the user and a consumption quantity of the product based on the information relating to the fluctuation in the power.

Abstract: There is provided a light guide plate for image display includes: a first laminate (11) configured to be provided with a first resin base (1), a first anchor coat layer (2), and a first barrier layer (3) in this order; and a hologram layer (4), wherein the first barrier layer (3) is made of silicon oxynitride as a main component and a nitrogen element formulation, which is determined by X-ray photoelectron spectroscopy (XPS), in the first barrier layer (3) is greater than 0 atm % and 25 atm % or less.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm?2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 ?m×250 ?m in the first main plan is 1×106 cm?2 or less.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: Provided is a light guide plate for image display, whereby clear images can be displayed even when a resin base is used, wherein the light guide plate for image display (1004) has a first resin base (1001) and a hologram layer (1002), and wherein the first resin base (1001) has an MC value of 0.120 or less obtained by evaluation using shadow contrast.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: There is provided an apparatus including a substrate holder to hold substrates including a product substrate and a dummy substrate, a transfer mechanism that loads the substrates into the substrate holder, a storage part to store a device parameter including at least the number of substrates that can be loaded on the substrate holder and the number of product substrates to be loaded on the substrate holder, and a controller to: (1) create substrate transfer data, which includes information indicating an order for transferring the substrates, transfer source information, and transfer destination information, according to the device parameter, (2) read the created substrate transfer data, (3) by transferring the substrates to the transfer mechanism based on the read substrate transfer data, transfer the dummy substrate to a substrate holding region except for a heat equalization region, and transfer the product substrate to the heat equalization region on the substrate holder.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10 ?5 ? or less is observed.

Abstract: Described herein is a technique capable of stabilizing conditions in a furnace at the start of a film-forming process. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: pre-processing of preparing a process environment in a process furnace of a substrate processing apparatus; film-forming by processing a substrate; and post-processing, wherein the pre-processing comprises (a1) determining whether to execute a maintenance recipe for a target object in the substrate processing apparatus, wherein (a1) is performed first in the pre-processing.

Abstract: A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm?2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 ?m×250 ?m in the first main plan is 1×106 cm?2 or less.

Abstract: The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate. This invention provides: a method for manufacturing an M-plane GaN substrate comprising; forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate, growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and cutting out the M-plane GaN substrate from the plane-shape GaN crystal.

Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10?4 rlu or less.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: There is provided an apparatus including a substrate holder to hold substrates including a product substrate and a dummy substrate, a transfer mechanism that loads the substrates into the substrate holder, a storage part to store a device parameter including at least the number of substrates that can be loaded on the substrate holder and the number of product substrates to be loaded on the substrate holder, and a controller to: (1) create substrate transfer data, which includes information indicating an order for transferring the substrates, transfer source information, and transfer destination information, according to the device parameter, (2) read the created substrate transfer data, (3) by transferring the substrates to the transfer mechanism based on the read substrate transfer data, transfer the dummy substrate to a substrate holding region except for a heat equalization region, and transfer the product substrate to the heat equalization region on the substrate holder.

Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10?4 rlu or less.

Abstract: A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10?4 rlu or less.