Patents by Inventor Shuichi Kuboi
Shuichi Kuboi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230087188Abstract: A plasma etching method of an embodiment includes etching a silicon-containing film using plasma of a fluorocarbon gas. The fluorocarbon gas contains fluorocarbon which has a composition, regarding carbon and fluorine, represented by a general formula: CxFy, where x and y are numbers satisfying x?12 and x?y, and which includes two benzene rings bonded through a C—C single bond.Type: ApplicationFiled: December 14, 2021Publication date: March 23, 2023Applicant: Kioxia CorporationInventors: Hiroyuki FUKUMIZU, Shuichi KUBOI, Abhishek THOTE
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Patent number: 11476122Abstract: A plasma etching method of an embodiment includes performing etching on a silicon-containing film by using plasma of a fluorocarbon gas. The fluorocarbon gas used in the plasma etching method has a composition, regarding carbon and fluorine, represented by CxFy, wherein x and y are numbers satisfying x?7 and y?x, and includes a benzene ring structure composed of six carbon atoms.Type: GrantFiled: September 3, 2020Date of Patent: October 18, 2022Assignee: Kioxia CorporationInventors: Shuichi Kuboi, Seiya Yoshinaga
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Publication number: 20220223430Abstract: A plasma etching method in an embodiment includes etching a silicon-containing film by using plasma of a hydrofluorocarbon gas. The hydrofluorocarbon gas contains, as a conjugated cyclic compound, hydrofluorocarbon having a composition represented by CxHyFz, where x, y, and z are positive integers satisfying x?6 and (z?y)/x?1).Type: ApplicationFiled: August 25, 2021Publication date: July 14, 2022Applicant: Kioxia CorporationInventors: Junji KATAOKA, Shuichi KUBOI
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Publication number: 20220084835Abstract: A plasma etching method according to an embodiment is a method for etching a silicon-containing film by using plasma of a fluorocarbon gas. The fluorocarbon gas includes at least one selected from a first fluorocarbon which has a main chain of six or more carbons bonded in a linear manner, the main chain having a structure of single bond and double bond alternately joined, a second fluorocarbon which has a main chain of six or more carbons bonded in a linear manner, the main chain having a structure of single bond and triple bond alternately joined, and a third fluorocarbon which has a main chain of five or more carbons bonded in a linear manner, the main chain having a structure which includes double bond and triple bond.Type: ApplicationFiled: June 14, 2021Publication date: March 17, 2022Applicant: Kioxia CorporationInventors: Shuichi KUBOI, Daiki IINO, Hiroyuki FUKUMIZU
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Publication number: 20210118690Abstract: A plasma etching method of an embodiment includes performing etching on a silicon-containing film by using plasma of a fluorocarbon gas. The fluorocarbon gas used in the plasma etching method has a composition, regarding carbon and fluorine, represented by CxFy, wherein x and y are numbers satisfying x?7 and y?x, and includes a benzene ring structure composed of six carbon atoms.Type: ApplicationFiled: September 3, 2020Publication date: April 22, 2021Applicant: Kioxia CorporationInventors: Shuichi KUBOI, Seiya YOSHINAGA
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Patent number: 8735859Abstract: A nonvolatile semiconductor memory device includes: a first interconnect; a second interconnect at a position opposing the first interconnect; and a variable resistance layer between the first interconnect and the second interconnect, the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity. Wherein the variable resistance layer has a compound of carbon and silicon as a main component and including hydrogen.Type: GrantFiled: November 29, 2010Date of Patent: May 27, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Shuichi Kuboi, Masayuki Takata, Tsukasa Nakai, Hiroyuki Fukumizu, Yasuhiro Nojiri, Kenichi Ootsuka
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Patent number: 8735246Abstract: According to one embodiment, a method is disclosed for manufacturing nonvolatile semiconductor memory device including forming a stacked body by alternately stacking an electrode layer and a layer-to-be-etched, and forming an oxidized layer between the layer-to-be-etched provided at least in any side of an upper side and a lower side of the electrode layer and the electrode layer. The method can include forming a groove which passes through the stacked body. The method can include embedding an insulating body within the groove. The method can include forming a hole which passes through the stacked body. The method can include selectively removing the layer-to-be-etched via the hole. The method can include forming a charge storage layer in an inner side of the hole. The method can include forming a channel body layer in an inner side of the charge storage layer.Type: GrantFiled: August 31, 2012Date of Patent: May 27, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Shuichi Kuboi, Tadashi Iguchi, Masao Iwase, Toru Matsuda
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Publication number: 20130228841Abstract: According to one embodiment, a method is disclosed for manufacturing nonvolatile semiconductor memory device including forming a stacked body by alternately stacking an electrode layer and a layer-to-be-etched, and forming an oxidized layer between the layer-to-be-etched provided at least in any side of an upper side and a lower side of the electrode layer and the electrode layer. The method can include forming a groove which passes through the stacked body. The method can include embedding an insulating body within the groove. The method can include forming a hole which passes through the stacked body. The method can include selectively removing the layer-to-be-etched via the hole. The method can include forming a charge storage layer in an inner side of the hole. The method can include forming a channel body layer in an inner side of the charge storage layer.Type: ApplicationFiled: August 31, 2012Publication date: September 5, 2013Applicant: Kabushiki Kaisha ToshibaInventors: Shuichi KUBOI, Tadashi Iguchi, Masao Iwase, Toru Matsuda
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Patent number: 8339834Abstract: According to one embodiment, a non-volatile semiconductor memory device includes: a first line; a second line intersecting with the first line; and a memory cell arranged at a position where the second line intersects with the first line, wherein, the memory cell includes: a variable resistance element; and a negative resistance element connected in series to the variable resistance element.Type: GrantFiled: September 15, 2010Date of Patent: December 25, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Tsukasa Nakai, Yasuhiro Nojiri, Shuichi Kuboi, Motoya Kishida, Akiko Nomachi, Masanobu Baba, Hiroyuki Fukumizu
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Publication number: 20120273743Abstract: A nonvolatile semiconductor memory device includes: a first interconnect; a second interconnect at a position opposing the first interconnect; and a variable resistance layer between the first interconnect and the second interconnect, the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity. Wherein the variable resistance layer has a compound of carbon and silicon as a main component and including hydrogen.Type: ApplicationFiled: November 29, 2010Publication date: November 1, 2012Applicant: Kabushiki Kaisha ToshibaInventors: Shuichi Kuboi, Masayuki Takata, Tsukasa Nakai, Hiroyuki Fukumizu, Yasuhiro Nojiri, Kenichi Ootsuka
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Publication number: 20110205781Abstract: According to one embodiment, a non-volatile semiconductor memory device includes: a first line; a second line intersecting with the first line; and a memory cell arranged at a position where the second line intersects with the first line, wherein, the memory cell includes: a variable resistance element; and a negative resistance element connected in series to the variable resistance element.Type: ApplicationFiled: September 15, 2010Publication date: August 25, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Tsukasa Nakai, Yasuhiro Nojiri, Shuichi Kuboi, Motoya Kishida, Akiko Nomachi, Masanobu Baba, Hiroyuki Fukumizu