Abstract: The charging voltage measuring device includes a measuring electrode for forming an electrostatic capacity Cs with a substrate disposed on a substrate holding unit, a measuring capacitor, which has an electrostatic capacity Cm, being connected between the measuring electrode and a ground potential portion, and, a voltage measuring unit for measuring a measuring voltage Vm across the measuring capacitor, and a calculating unit. The calculating unit 22 calculates the charging voltage Vs on the surface of the substrate at time t1 in accordance with the following numerical expression on the basis of the measuring voltage Vm(t1) at time t1, an inverse K of a voltage dividing ratio and a resistance value Rm of a resistor disposed in parallel to the measuring capacitor 18, when the measurement time is t1 Vs=K[Vm(t1)+{1/(Cm·Rm)}?0t1Vm(t)dt] where K=(Cs+Cm)/Cs or K=Cm/Cs (if Cm>>Cs).

Abstract: The charging voltage measuring device includes a measuring electrode for forming an electrostatic capacity Cs with a substrate disposed on a substrate holding unit, a measuring capacitor, which has an electrostatic capacity Cm, being connected between the measuring electrode and a ground potential portion, and, a voltage measuring unit for measuring a measuring voltage Vm across the measuring capacitor, and a calculating unit. The calculating unit 22 calculates the charging voltage Vs on the surface of the substrate at time t1 in accordance with the following numerical expression on the basis of the measuring voltage Vm(t1) at time t1, an inverse K of a voltage dividing ratio and a resistance value Rm of a resistor disposed in parallel to the measuring capacitor 18, when the measurement time is t1. Vs=K[Vm(t1)+{1/(Cm·Rm)}?0t1Vm(t)dt] where K=(Cs+Cm)/Cs or K=Cm/Cs (if Cm>>Cs).

Abstract: The charging voltage measuring device includes a measuring electrode for forming an electrostatic capacity Cs with a substrate disposed on a substrate holding unit, a measuring capacitor, which has an electrostatic capacity Cm, being connected between the measuring electrode and a ground potential portion, and, a voltage measuring unit for measuring a measuring voltage Vm across the measuring capacitor, and a calculating unit. The calculating unit 22 calculates the charging voltage Vs on the surface of the substrate at time t1 in accordance with the following numerical expression on the basis of the measuring voltage Vm(t1) at time t1, an inverse K of a voltage dividing ratio and a resistance value Rm of a resistor disposed in parallel to the measuring capacitor 18, when the measurement time is t1.

Abstract: The charging voltage measuring device includes a measuring electrode for forming an electrostatic capacity Cs with a substrate disposed on a substrate holding unit, a measuring capacitor, which has an electrostatic capacity Cm, being connected between the measuring electrode and a ground potential portion, and, a voltage measuring unit for measuring a measuring voltage Vm across the measuring capacitor, and a calculating unit. The calculating unit 22 calculates the charging voltage Vs on the surface of the substrate at time t1 in accordance with the following numerical expression on the basis of the measuring voltage Vm(t1) at time t1, an inverse K of a voltage dividing ratio and a resistance value Rm of a resistor disposed in parallel to the measuring capacitor 18, when the measurement time is t1.

Abstract: An ion implanting apparatus is provided with a control apparatus 22 for controlling the filament current passing to the respective filaments 6 in accordance with the beam current IB measured by a plurality of beam current measuring instruments 18.

Abstract: A plasma generating apparatus has a plasma-generating vessel into which a gas is introduced. A coaxial line is inserted into the plasma-generating vessel. The coaxial line is insulated from the vessel with an insulator. The coaxial line has a central conductor and an outer conductor, to both of which microwave is supplied from a magnetron. That part of the central conductor which is located inside the plasma-generating vessel has, disposed therein, permanent magnets which form a cusp field. A seed plasma is formed around the permanent magnets by microwave discharge. A direct-current voltage is applied from a direct-voltage source between the outer conductor 24 and the plasma-generating vessel. Upon this application, electrons in the seed plasma move toward the inner wall of the plasma-generating vessel and are accelerated to ionize the gas. The ionized gas serves as seeds to cause arc discharge between the outer conductor and the plasma-generating vessel to generate a main plasma.