Abstract: A solid-state imaging device according to the present invention includes a semiconductor substrate; a light-receiving element formed in the semiconductor substrate and photoelectrically converting incident light; and a plurality of wiring layers stacked on top of each other on a surface of the semiconductor substrate where the light-receiving element is formed. At least one of the plurality of wiring layers includes: a first insulating layer; metal wiring formed on the first insulating layer; an antireflection layer stacked on the first insulating layer and the metal wiring, preventing diffusion of a material making up of the metal wiring, and preventing reflection of the incident light; and a second insulating layer stacked on the antireflection layer.

Abstract: A metal wire and a metal electrode which are composed of an aluminum alloy are formed on an interlayer insulating film composed of a silicon oxide film which is formed on the semiconductor substrate. On the entire surface of the metal wire and the metal electrode, a silicon oxide film and a silicon nitride film are formed serially, so as to compose a passivation film. A silicon nitrided-oxide layer is formed by nitriding a silicon oxide film in an area of the silicon oxide film which is the vicinity of the junction of either the metal wire or the metal electrode and the interlayer insulating film.

Abstract: The invention is intended to form a recess large in the opening width at the contact hole forming position of the insulator film before opening contact holes in the insulator film, and to open contact holes smaller in opening width at the bottom of the recess.According to the manufacturing method of the invention, since the opening size of the recess in the upper portion of the contact hole may be set larger and by decreasing the shadowing effect when covering the aluminum alloy wiring layer, the degree of covering of the aluminum alloy wiring layer on the side wall of the contact hole is improved, so that reduction of contact resistance and enhancement of reliability may be achieved.