Abstract: A current-limiting device is a current-limiting device that uses a superconductor to perform a current-limiting operation, the current-limiting device including: a superconducting current-limiting element including the superconductor; a capacitor; a reactor; and a bypass switch. The series capacitor is connected in series to the superconducting current-limiting element. The current-limiting reactor is further connected in series to a series circuit including the superconducting current-limiting element and the series capacitor. The thyristor switch is connected in parallel to the series circuit.

Abstract: A current-limiting and power-flow control device according to the present invention includes a superconducting current-limiting element including a superconductor, a series capacitor, and a parallel circuit. The series capacitor is connected in series with the superconducting current-limiting element. The parallel circuit includes a reactor connected in parallel with a series circuit including the superconducting current-limiting element and the series capacitor. Accordingly, overcurrent at the time of occurrence of a fault causes transition of the superconductor of the superconducting current-limiting element to the normal conducting state, and thus causes autonomous current-limiting operation of the superconducting current-limiting element. Thus, application of an excessive load across the terminals of the series capacitor due to the aforementioned fault can surely be prevented.

Abstract: A current-limiting and power-flow control device according to the present invention includes a superconducting current-limiting element including a superconductor, a series capacitor, and a parallel circuit. The series capacitor is connected in series with the superconducting current-limiting element. The parallel circuit includes a reactor connected in parallel with a series circuit including the superconducting current-limiting element and the series capacitor. Accordingly, overcurrent at the time of occurrence of a fault causes transition of the superconductor of the superconducting current-limiting element to the normal conducting state, and thus causes autonomous current-limiting operation of the superconducting current-limiting element. Thus, application of an excessive load across the terminals of the series capacitor due to the aforementioned fault can surely be prevented.

Abstract: A current-limiting device is a current-limiting device that uses a superconductor to perform a current-limiting operation, the current-limiting device including: a superconducting current-limiting element including the superconductor; a capacitor; a reactor; and a bypass switch. The series capacitor is connected in series to the superconducting current-limiting element. The current-limiting reactor is further connected in series to a series circuit including the superconducting current-limiting element and the series capacitor. The thyristor switch is connected in parallel to the series circuit.

Abstract: A metal film high in reflectivity and excellent in adhesion to a synthetic resin substrate even in the case where the metal film is sufficiently thin, is formed on a surface of the substrate by sputtering a metal target by ions through an inert gas plasma in a vacuum vessel, wherein the substrate is covered with an electrostatic shield during the sputtering.

Abstract: A metal film high in reflectivity and excellent in adhesion to a synthetic resin substrate even in the case where the metal film is sufficiently thin, is formed on a surface of the substrate by sputtering a metal target through an inert gas ion beam drawn out of an ion source in a vacuum vessel. An aluminum film coated matter formed by coating a surface of a synthetic resin substrate with an aluminum film, is characterized in that the aluminum film contains aluminum crystals at a portion in the film at a depth of not more than 600 .ANG. from a film surface thereof which contacts with the substrate. The aluminum crystals has a relation in which a crystal axis <111> perpendicular to a (111) plane is perpendicular or substantially perpendicular to the film surface. Also, the aluminum crystals exhibits a diffraction X-ray spectrum of a (111) plane when measured by X-ray diffraction according to a diffractometer method under the following conditions: target: Cu, X-ray type: K.alpha.

Abstract: An ion source having an auxiliary plasma chamber and a main plasma chamber. The auxiliary plasma chamber receives an ionizable gas and is provided with microwaves with sufficient power to create a high frequency discharge and generate a subplasma for sustaining the creation of an ion plasma in the main chamber. Multiple auxiliary plasma chambers may be used and each may be separately regulated. Protective plates, screens, and coatings may be provided to protect the ion plasma of the main chamber from sputtering a facing wall of the auxiliary plasma chamber.

Abstract: A process for producing a superconducting thin film on a surface of a substrate of the present invention comprises the steps of: sputttering a target made of a group IIIa metal and/or an oxide thereof, a group IIa metal and/or an oxide thereof and copper and/or an oxide theref with an ion beam or a neutral beam to allow the sputtered particles from the target to be deposited on the substrate; and impinging an oxygen neutral beam on the substrate.

Abstract: A process for producing a superconducting thin film of the present invention comprises: supplying onto a substrate a group IIa metal and/or an oxide thereof, a group IIIa metal and/or an oxide thereof, and copper and/or an oxide thereof; and irradiating the substrate with an oxygen neutral beam, to thereby form a thin film of IIa-IIIa-Cu oxide.