Abstract: The present invention provides a susceptor with improved responsiveness of temperature control, and an object thereof is to obtain a high-quality wafer product without impairing productivity. Provided is a susceptor that generates heat by induction heating, the susceptor including a graphite base material and a ceramic coating layer. The graphite base material exhibits a variation (?max/?min) of an in-plane electrical resistivity distribution of the graphite base material at room temperature of 1.00 to 1.05 and a rate of high-temperature change (?1600/?800) of electrical resistivity at 1600° C. to that at 800° C. of 1.14 to 1.30.

Abstract: The present invention provides a susceptor with improved responsiveness of temperature control, and an object thereof is to obtain a high-quality wafer product without impairing productivity. Provided is a susceptor that generates heat by induction heating, the susceptor including a graphite base material and a ceramic coating layer. The graphite base material exhibits a variation (?max/?min) of an in-plane electrical resistivity distribution of the graphite base material at room temperature of 1.00 to 1.05 and a rate of high-temperature change (?1600/?800) of electrical resistivity at 1600° C. to that at 800° C. of 1.14 to 1.30.

Abstract: A semiconductor device includes an n-type semiconductor substrate, which has a main surface having an element region and an outer peripheral region surrounding the element region; a p-type guard ring, which includes: a lowly-doped p-type region disposed on an upper surface of the semiconductor substrate in the outer peripheral region surrounding the element region; and a highly-doped p-type region disposed on an inner side of the lowly-doped p-type region and having an impurity concentration higher than an impurity concentration of the lowly-doped p-type region, wherein a side surface and a bottom surface of the highly-doped p-type region are covered by the lowly-doped p-type region such that the highly-doped p-type region is not in contact with the n-type region; and an ohmic junction electrode, which forms an ohmic junction with the highly-doped p-type region.

Abstract: A semiconductor device is provided, comprising a semiconductor base of a first conductivity type having a main surface, an element region arranged in the main surface; and a peripheral region surrounding the element region, the peripheral region comprising a field limiting ring region including a peripheral semiconductor region of a second conductivity type surrounding the element region in the main surface of the semiconductor base, the field limiting ring region including a groove formed in the peripheral semiconductor region, the groove extending in a film-thickness direction from an upper surface of the peripheral semiconductor region. As seen along a direction from the element region toward an outer edge of the peripheral region, a center position of the groove is closer to the element region than a center position of the peripheral semiconductor region.

Abstract: Recording layer 12 is formed on substrate 11, ultraviolet-curing resin layer 13 is formed on recording layer 12, and light-transmissible layer 15 is attached to the ultraviolet-curing resin layer 13 through adhesive layer 14. It is preferable that the hardness of the ultraviolet-curing resin 13 is equal to HB or more, and the film thickness thereof is set to a value in the range from 2 ?m to 40 ?m. The total thickness of the ultraviolet-curing resin layer 13, the adhesive layer 14 and the light-transmissible layer 15 is set to a value in the range from 20 ?m to 150 ?m.

Abstract: A phase change optical disk has a multilayered structure obtained by sequentially forming at least a lower dielectric layer, recording layer, upper dielectric layer, and reflective layer on a substrate. The reflectance Rc of the disk with respect to light with a wavelength of 380 nm to 430 nm, when the recording layer is in a crystalline state, is lower than the reflectance Ra of the disk when the recording layer is in an amorphous state.

Abstract: An optical storage medium includes a substrate having grooves and lands. A first dielectric layer overlies the substrate. A recording layer overlies the first dielectric layer. A second dielectric layer overlies the recording layer, and a light transmitting layer overlying the second dielectric layer. Each of the grooves is larger in width than adjacent two of the lands.

Abstract: A signal of a test pattern is recorded on a center track among three adjacent tracks placed in a test region while changing recording power, and a signal of a test pattern is recorded on tracks adjacent to both sides while changing the recording power with the same timing. The center track is reproduced to measure reproduction signal characteristics, and the optimum recording power is adjusted based on the reproduction signal characteristics. As a result of this, the optimum recording power considering an influence of cross erasing effect can be adjusted, and the recording power can be adjusted efficiently under a high-density recording condition, particularly a narrow track pitch condition.

Abstract: An optical information recording medium includes a substrate, and a record layer formed on the substrate. Information is recorded using a laser beam with a wavelength of 380 nm to 430 nm, and refraction index n and attenuation coefficient k of the record layer satisfy a relation of 3.9<n<5.6 and k>0.4 to the wavelength of 380 to 430 nm.

Abstract: A signal of a predetermined pattern is recorded on a center track among three adjacent tracks placed in a test region while changing recording power, and a signal of a predetermined pattern is recorded on tracks adjacent to both sides while changing the recording power with the same timing. The center track is reproduced to measure reproduction signal characteristics, and the optimum recording power is adjusted based on the reproduction signal characteristics. As a result of this, the optimum recording power considering an influence of cross erasing effect can be adjusted, and the recording power can be adjusted efficiently under a high-density recording condition, particularly a narrow track pitch condition.

Abstract: Recording layer 12 is formed on substrate 11, ultraviolet-curing resin layer 13 is formed on recording layer 12, and light-transmissible layer 15 is attached to the ultraviolet-curing resin layer 13 through adhesive layer 14. It is preferable that the hardness of the ultraviolet-curing resin 13 is equal to HB or more, and the film thickness thereof is set to a value in the range from 2 &mgr;m to 40 &mgr;m. The total thickness of the ultraviolet-curing resin layer 13, the adhesive layer 14 and the light-transmissible layer 15 is set to a value in the range from 20 &mgr;m to 150 &mgr;m.

Abstract: The present invention provides an optical storage medium including: a substrate having grooves and lands; a first dielectric layer overlying the substrate; a recording layer overlying the first dielectric layer; a second dielectric layer overlying the recording layer; and a light transmitting layer overlying the second dielectric layer, wherein each of the grooves is larger in width than adjacent two of the lands.

Abstract: A phase change optical disk has a multilayered structure obtained by sequentially forming at least a lower dielectric layer, recording layer, upper dielectric layer, and reflective layer on a substrate. The reflectance Rc of the disk with respect to light with a wavelength of 380 nm to 320 nm, when the recording layer is in a crystalline state, is lower than the reflectance Ra of the disk when the recording layer is in an amorphous state.

Abstract: A phase-changing optical disk solving the problem of difference in recording sensitivity between the land and groove without complexing configuration of the recording device or optical disk production scheme. The present invention provides a phase-changing optical disk including a substrate 11, provided with guiding grooves 17 to form the lands and grooves as the recording tracks, which are laminated with a first dielectric layer 12, second dielectric layer 13, recording layer 14, third dielectric layer 15 and reflection layer 16 in this order, wherein the material for the first dielectric layer 12 has a higher thermal conductivity than that for the second dielectric layer 13, and thickness of the second dielectric layer 13 is smaller than depth ds of the guiding groove 17.

Abstract: A first dielectric layer, a second dielectric layer, a third dielectric layer, a recording layer, a fourth dielectric layer, and a reflective layer are provided in that order on a substrate to constitute a phase-change type optical disk. The first dielectric layer, the second dielectric layer, and the third dielectric layer are constructed to satisfy the relationships: n1>n2 and n3>n2 wherein n1 represents the refractive index of the first dielectric layer, n2 represents the refractive index of the third dielectric layer, n3 represents the refractive index of the second dielectric layer. According to the above construction, the light reflectance of the amorphous area can be increased to lower the light absorption of the amorphous area, realizing inhibition of cross erasing. Further, since no light absorptive layer is present between the substrate and the recording layer, the temperature rise around the surface of the substrate can be inhibited to reduce the thermal deformation of the substrate.

Abstract: A particle packing apparatus which includes a particle distributor capable of forming a concave-conical packed surface upon scattering of particles in a steady state and having a parameter with which to control the size of the cone and a packing monitor capable of continuously detecting the entire packed surface condition is provided. A concave-conical packed surface of the particles scattered in a steady state is formed by the distributor while the packing monitor is continuously detecting the formation of the packed surface and intermittently or continuously the parameter of the particle distributor is controlled to reduce the cone size gradually and form and deposit, on the inner side of the concave-conical packed surface, successively smaller packed surfaces at predetermined intervals or uninterruptedly, whereby a flat, smooth packed surface is formed. When scanning the deposit surface with laser light, detecting the reflected light, and measuring the deposit height by trigonometry, it is image-processed.

Abstract: A method of determining cloud points is provided which comprises: bringing a sample into contact with a high precision cloud point meter which includes a waveguide sensor of a total-reflection type connected to both incidence and emergence optical fibers and a cooling/heating means located in contact with the total-reflection type sensor to cool/heat it within a desired temperature range; cooling/heating the sample; and then determining the sample temperature at which total-reflection of light has taken place as the cloud point of the sample. The sensor includes a waveguide of a structure which consists of an incidence channel and an emergence channel formed on a substrate and which intersect along a detection surface with which a liquid whose cloud point is to be determined comes in contact.

Abstract: A refractive index sensor of a total-reflection type comprises a waveguiding layer of a cladding/core/cladding waveguide structure formed on a substrate. The waveguiding layer has an input face connected to either a single optical fiber or a plurality of optical fibers for injecting a light(s) into the layer, a detection face which, obeying Snell's law, totally reflects/transmits the light beam or beams that have arrived there with an expansion angle from the optical fiber or fibers and which constitutes a surface with which a material whose refractive index is to be measured comes in contact, and an output face which outputs the light reflected from the detection face and is connected to an optical detector. The refractive index of the material of interest is detected from a bright-dark boundary of the presence of the corresponding total reflected light from the detection face. With no need of a bulk prism or lamp-type light source, the sensor is small in size and high in sensitivity.