Patents by Inventor Shuichi Tateno

Shuichi Tateno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8496718
    Abstract: A silicon nitride cutting tool comprising a sintered product is disclosed. The sintered product comprises silicon nitride, at least one rare earth element compound, and a magnesium compound. The silicon nitride cutting tool further comprises a surface region and an inside region comprising the sintered product with varying content ratios of component compounds to provide enhanced wear and fracture resistance.
    Type: Grant
    Filed: March 25, 2009
    Date of Patent: July 30, 2013
    Assignee: Kyocera Corporation
    Inventors: Takashi Watanabe, Tatsuyuki Nakaoka, Takero Fukudome, Shuichi Tateno, Hiroshi Yoshimitsu
  • Patent number: 8236411
    Abstract: An object of embodiments according to the invention is to provide a cutting tool having good wear resistance, good sliding property and good fracture resistance. A cutting tool 1 comprising a substrate 2 and a coating layer 6 or a coating layer 9 which covers a surface of the substrate 2. The coating layer 6 or the coating layer 9 comprising a first layer 7 and a second layer 8. The first layer 7 comprises Ti1-a-b-c-dAlaWbSicMd(C1-xNx) when M is at least one selected from Nb, Mo, Hf and Y, 0.45?a?0.55, 0.01?b?0.1, 0?c?0.05, 0.01?d?0.1, 0?x?1). The second layer 8 comprises Ti1-e-f-gAleSifM?g(C1-yNy) when M? is at least one selected from Nb, Mo, Ta, Hf and Y, 0.50?e?0.60, 0?f?0.1, 0.05?g?0.15, 0?y?1).
    Type: Grant
    Filed: March 25, 2009
    Date of Patent: August 7, 2012
    Assignee: Kyocera Corporation
    Inventors: Masahiro Waki, Tatsuyuki Nakaoka, Shuichi Tateno, Takashi Watanabe, Kenji Noda, Takahiko Makino, YaoCan Zhu
  • Patent number: 7749932
    Abstract: A sintered product of silicon nitride includes a crystal phase mainly having silicon nitride crystal grains and an amorphous grain-boundary phase located on the grain boundaries of the silicon nitride crystal grains. The grain-boundary phase contains lanthanum, aluminum, magnesium, silicon, and oxygen. The sintered product described above contains 0.1% by mass or more of lanthanum on an oxide basis, 0.05 to 0.6% by mass of aluminum on an oxide basis, 0.3% by mass or more of magnesium on an oxide basis, and 2.5% by mass or less of oxygen. The total amount of lanthanum on an oxide basis, aluminum on an oxide basis, and magnesium on an oxide basis is 3.5% by mass or less.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: July 6, 2010
    Assignee: Kyocera Corporation
    Inventors: Takero Fukudome, Shuichi Tateno, Hiroshi Yoshimitsu, Takashi Watanabe, Tatsuyuki Nakaoka
  • Publication number: 20100129168
    Abstract: An object of embodiments according to the invention is to provide a cutting tool having good wear resistance, good sliding property and good fracture resistance. A cutting tool 1 comprising a substrate 2 and a coating layer 6 or a coating layer 9 which covers a surface of the substrate 2. The coating layer 6 or the coating layer 9 comprising a first layer 7 and a second layer 8. The first layer 7 comprises Ti1-a-b-c-dAlaWbSicMd(C1-xNx) when M is at least one selected from Nb, Mo, Hf and Y, 0.45?a?0.55, 0.01?b?0.1, 0?c?0.05, 0.01?d?0.1, 0?x?1). The second layer 8 comprises Ti1-e-f-gAleSifM?g(C1-yNy) when M? is at least one selected from Nb, Mo, Ta, Hf and Y, 0.50?e?0.60, 0?f?0.1, 0.05?g?0.15, 0?y?1).
    Type: Application
    Filed: March 25, 2009
    Publication date: May 27, 2010
    Applicant: Kyocera Corporation
    Inventors: Masahiro Waki, Tatsuyuki Nakaoka, Shuichi Tateno, Takashi Watanabe, Kenji Noda, Takahiko Makino
  • Publication number: 20090246464
    Abstract: A silicon nitride cutting tool comprising a sintered product is disclosed. The sintered product comprises silicon nitride, at least one rare earth element compound, and a magnesium compound. The silicon nitride cutting tool further comprises a surface region and an inside region comprising the sintered product with varying content ratios of component compounds to provide enhanced wear and fracture resistance.
    Type: Application
    Filed: March 25, 2009
    Publication date: October 1, 2009
    Applicant: KYOCERA CORPORATION
    Inventors: Takashi WATANABE, Tatsuyuki NAKAOKA, Takero FUKUDOME, Shuichi TATENO, Hiroshi YOSHIMITSU
  • Publication number: 20080220243
    Abstract: A sintered product of silicon nitride includes a crystal phase mainly having silicon nitride crystal grains and an amorphous grain-boundary phase located on the grain boundaries of the silicon nitride crystal grains. The grain-boundary phase contains lanthanum, aluminum, magnesium, silicon, and oxygen. The sintered product described above contains 0.1% by mass or more of lanthanum on an oxide basis, 0.05 to 0.6% by mass of aluminum on an oxide basis, 0.3% by mass or more of magnesium on an oxide basis, and 2.5% by mass or less of oxygen. The total amount of lanthanum on an oxide basis, aluminum on an oxide basis, and magnesium on an oxide basis is 3.5% by mass or less.
    Type: Application
    Filed: February 21, 2008
    Publication date: September 11, 2008
    Applicant: KYOCERA CORPORATION
    Inventors: Takero Fukudome, Shuichi Tateno, Hiroshi Yoshimitsu, Takashi Watanabe, Tatsuyuki Nakaoka
  • Publication number: 20040134875
    Abstract: A method of producing a circuit-parts sheet having a structure in which a light-nontransmitting circuit-forming pattern is secured in a photo-cured ceramic sheet and is exposed on both surfaces of said photo-cured ceramic sheet, comprising the steps of:
    Type: Application
    Filed: November 21, 2003
    Publication date: July 15, 2004
    Applicant: KYOCERA CORPORATION
    Inventors: Norimitsu Fukami, Shuichi Tateno, Seiichiro Hirahara, Akira Imoto
  • Patent number: 6143116
    Abstract: A multilayer wiring board formed by laminating a plurality of circuit board units each including an insulating board containing at least a thermosetting resin, and a wiring circuit layer formed on the surface of said insulating board, wherein said insulating board is provided with via hole conducting passages so as to electrically connect the wiring circuit layers of the neighboring circuit board units, said via hole conducting passages are formed by filling via holes formed in the insulating board with a conducting paste, and said wiring circuit layer is buried in the surface of the insulating board in a manner that said insulating board possesses a flat surface. The multilayer wiring board has a satisfactory flatness required for mounting flip chips. Besides, the insulating board and the via hole conducting passages are not infiltrated by chemicals such as etching solution or plating solution.
    Type: Grant
    Filed: September 25, 1997
    Date of Patent: November 7, 2000
    Assignee: Kyocera Corporation
    Inventors: Katsura Hayashi, Akihiko Nishimoto, Yukihiro Hiramatsu, Yuji Iino, Shuichi Tateno, Riichi Sasamori, Shigeaki Fukumoto
  • Patent number: 5571611
    Abstract: Disclosed is a composite ceramic sintered material comprising a surface layer of a composition which contains the silicon nitride and carbon, and an internal portion of the silicon carbide or a combination of the silicon carbide, silicon nitride and carbon, the content of carbon or the content of the silicon nitride being greater in the surface layer than in the internal portion.
    Type: Grant
    Filed: June 6, 1995
    Date of Patent: November 5, 1996
    Assignee: Kyocera Corporation
    Inventors: Saburou Nagano, Shuichi Tateno, Kouichi Kamitubo, Kenichi Tajima, Masahito Nakanishi
  • Patent number: 5462813
    Abstract: Disclosed is a composite ceramic sintered material comprising a surface layer of a composition which contains the silicon nitride and carbon, and an internal portion of the silicon carbide or a combination of the silicon carbide, silicon nitride and carbon, the content of carbon or the content of the silicon nitride being greater in the surface layer than in the internal portion.
    Type: Grant
    Filed: December 7, 1993
    Date of Patent: October 31, 1995
    Assignee: Kyocera Corporation
    Inventors: Saburou Nagano, Shuichi Tateno, Kouichi Kamitubo, Kenichi Tajima, Masahito Nakanishi