Abstract: A method of manufacturing a magnetoresistive memory device, including forming first and second conductors, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer, in order, in a direction away from a substrate. Irradiating, with a first ion beam, the first ferromagnetic layer, the insulating layer, and the second ferromagnetic layer, wherein a third conductor is deposited on a side surface of the second ferromagnetic layer during the irradiation of the first ion beam. Irradiating, with a second ion beam, the second conductor, wherein a first insulator is deposited on a side surface of the insulating layer during the irradiation of the second ion beam; and irradiating, with a third ion beam, the first conductor, wherein a fourth conductor is deposited on a side surface of the second conductor during the irradiation of the third ion beam.

Abstract: According to an embodiment, a magnetoresistive memory device includes a layer stack. The layer stack includes a first ferromagnet, an insulator on the first ferromagnet, and a second ferromagnet on the insulator. A nonmagnet is provided above the layer stack. A first conductor is provided on the nonmagnet. A hard mask is provided above the first conductor. The nonmagnet includes a material that is removed at a first etching rate against a first ion beam. The first conductor includes a material that is removed at a second etching rate against the first ion beam. The first etching rate is lower than the second etching rate.

Abstract: A semiconductor memory device includes a first interconnect, a second interconnect, a first storage layer, and a first insulating film. The first insulating film is provided along a surface of a part of the second interconnect and a surface of the first storage layer. The first insulating film is composed of Si, N, and O. The atomic ratio (N/O) between N and O in the first insulating film is not less than 1.0 at a first position which is the position of the second interconnect-side end surface of the first storage layer in a third direction. The atomic ratio (N/O) between N and O in the first insulating film is less than 1.0 at a second position which is the position of the end surface of the second interconnect, opposite to the first storage layer-side end surface, in the third direction.

Abstract: According to one embodiment, a magnetoresistive memory device includes: a first conductor; a layer stack; an insulator on a side surface of the layer stack; a second conductor on a second surface of the layer stack; a third conductor; and a fourth conductor on the third conductor. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer and has a first surface in contact with the first conductor. The second surface is at an opposite side of the first surface. The third conductor has a portion on the second conductor and a portion on a side surface of the insulator.

Abstract: A semiconductor memory device includes a first interconnect, a second interconnect, a first storage layer, and a first insulating film. The first insulating film is provided along a surface of a part of the second interconnect and a surface of the first storage layer. The first insulating film is composed of Si, N, and O. The atomic ratio (N/O) between N and O in the first insulating film is not less than 1.0 at a first position which is the position of the second interconnect-side end surface of the first storage layer in a third direction. The atomic ratio (N/O) between N and O in the first insulating film is less than 1.0 at a second position which is the position of the end surface of the second interconnect, opposite to the first storage layer-side end surface, in the third direction.

Abstract: A method of manufacturing a magnetoresistive memory device, including forming first and second conductors, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer, in order, in a direction away from a substrate. Irradiating, with a first ion beam, the first ferromagnetic layer, the insulating layer, and the second ferromagnetic layer, wherein a third conductor is deposited on a side surface of the second ferromagnetic layer during the irradiation of the first ion beam. Irradiating, with a second ion beam, the second conductor, wherein a first insulator is deposited on a side surface of the insulating layer during the irradiation of the second ion beam; and irradiating, with a third ion beam, the first conductor, wherein a fourth conductor is deposited on a side surface of the second conductor during the irradiation of the third ion beam.

Abstract: According to an embodiment, a magnetoresistive memory device includes a first conductor with a first surface. A first structure on the first surface of the first conductor includes a first ferromagnetic layer. An insulating layer is on the first structure. A second structure on the insulating layer includes a second ferromagnetic layer. A second conductor is in contact with the first surface of the first conductor and a side surface of the first structure. A first insulator on the second conductor covers a side surface of the insulating layer, and is in contact with the side surface of the first structure and a side surface of the second structure. A third conductor on the first insulator is in contact with the side surface of the second structure.

Abstract: According to an embodiment, a magnetoresistive memory device includes a layer stack. The layer stack includes a first ferromagnet, an insulator on the first ferromagnet, and a second ferromagnet on the insulator. A nonmagnet is provided above the layer stack. A first conductor is provided on the nonmagnet. A hard mask is provided above the first conductor. The nonmagnet includes a material that is removed at a first etching rate against a first ion beam. The first conductor includes a material that is removed at a second etching rate against the first ion beam. The first etching rate is lower than the second etching rate.

Abstract: According to one embodiment, a magnetoresistive memory device includes: a first conductor; a layer stack; an insulator on a side surface of the layer stack; a second conductor on a second surface of the layer stack; a third conductor; and a fourth conductor on the third conductor. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer and has a first surface in contact with the first conductor. The second surface is at an opposite side of the first surface. The third conductor has a portion on the second conductor and a portion on a side surface of the insulator.

Abstract: According to an embodiment, a magnetoresistive memory device includes a first conductor with a first surface. A first structure on the first surface of the first conductor includes a first ferromagnetic layer. An insulating layer is on the first structure. A second structure on the insulating layer includes a second ferromagnetic layer. A second conductor is in contact with the first surface of the first conductor and a side surface of the first structure. A first insulator on the second conductor covers a side surface of the insulating layer, and is in contact with the side surface of the first structure and a side surface of the second structure. A third conductor on the first insulator is in contact with the side surface of the second structure.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic layer, a first insulating layer covering the stacked structure and including a protrusion based on the stacked structure, a second insulating layer provided on the first insulating layer, and an electrode connected to the stacked structure. The first insulating layer has a first hole passing through the first insulating layer, the electrode is connected to the stacked structure at least through the first hole, the second insulating layer has a second hole inside of which a part of the electrode and the protrusion are provided, and the second hole includes a part whose area increases toward the stacked structure.

Abstract: According to an embodiment, a magnetoresistive memory device includes a layer stack. The layer stack includes a first ferromagnet, an insulator on the first ferromagnet, and a second ferromagnet on the insulator. A nonmagnet is provided above the layer stack. A first conductor is provided on the nonmagnet. A hard mask is provided above the first conductor. The nonmagnet includes a material that is removed at a first etching rate against a first ion beam. The first conductor includes a material that is removed at a second etching rate against the first ion beam. The first etching rate is lower than the second etching rate.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic layer, a first insulating layer covering the stacked structure and including a protrusion based on the stacked structure, a second insulating layer provided on the first insulating layer, and an electrode connected to the stacked structure. The first insulating layer has a first hole passing through the first insulating layer, the electrode is connected to the stacked structure at least through the first hole, the second insulating layer has a second hole inside of which a part of the electrode and the protrusion are provided, and the second hole includes a part whose area increases toward the stacked structure.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first magnetic layer and the second magnetic layer, and a sidewall insulating layer provided on a side surface of the stacked structure and containing boron (B).

Abstract: According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a stack film including a magnetic layer on an underlying area, forming a hard mask on the stack film, forming a stack structure by etching the stack film using the hard mask as a mask, forming a first protective insulating film on a side surface of the stack structure, and performing an oxidation treatment.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure, the stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the nonmagnetic layer comprises a structure in which a first oxide layer formed of a first metal oxide and a second oxide layer formed of a second metal oxide having a relative dielectric constant greater than a relative dielectric constant of the first metal oxide are stacked.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a first magnetic layer having a variable magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, wherein as viewed in a direction parallel to a stacked direction of the stacked structure, a pattern of a lower surface of the first magnetic layer is located inside a pattern of an upper surface of the first magnetic layer, and a pattern of an upper surface of the second magnetic layer is located inside a pattern of a lower surface of the second magnetic layer or substantially conforms to the pattern of the lower surface of the second magnetic layer.

Abstract: According to one embodiment, a magnetic memory device includes a stacked structure, the stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein the nonmagnetic layer comprises a structure in which a first oxide layer formed of a first metal oxide and a second oxide layer formed of a second metal oxide having a relative dielectric constant greater than a relative dielectric constant of the first metal oxide are stacked.

Abstract: A magnetoresistive effect element according to one embodiment includes: a first magnetic layer; a nonmagnetic layer; a second magnetic layer; a metal layer; and a third magnetic layer. An area of a bottom of the third magnetic layer is larger than an area of a top of the third magnetic layer. An angle between the top of the third magnetic layer and a side of the third magnetic layer is larger than an angle between a top of the second magnetic layer and a side of the second magnetic layer, or an angle between the bottom of the third magnetic layer and a side of the third magnetic layer is smaller than an angle between the bottom of the second magnetic layer and a side of the second magnetic layer.

Abstract: A magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.