Patents by Inventor Shuichiro Sugiyama
Shuichiro Sugiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8896737Abstract: A solid-state imaging apparatus has a plurality of pixels, wherein each of the pixels includes: a photoelectric conversion element for converting incident light to an electric charge; an accumulating element accumulating the electric charge converted by the photoelectric conversion element; a first transfer element for transferring the electric charge converted by the photoelectric conversion element to the accumulating element; a second transfer element for transferring the electric charge accumulated in the accumulating element to a floating diffusion region; and an amplifying element for amplifying the electric charge in the floating diffusion region, wherein the first transfer element transfers the electric charge converted by the photoelectric conversion element to the accumulating element a plurality of times and causes the accumulating element to cumulatively accumulate the electric charge transferred the plurality of times.Type: GrantFiled: July 15, 2013Date of Patent: November 25, 2014Assignee: Canon Kabushiki KaishaInventors: Shuichiro Sugiyama, Yuichiro Yamashita
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Publication number: 20130300904Abstract: A solid-state imaging apparatus has a plurality of pixels, wherein each of the pixels includes: a photoelectric conversion element for converting incident light to an electric charge; an accumulating element accumulating the electric charge converted by the photoelectric conversion element; a first transfer element for transferring the electric charge converted by the photoelectric conversion element to the accumulating element; a second transfer element for transferring the electric charge accumulated in the accumulating element to a floating diffusion region; and an amplifying element for amplifying the electric charge in the floating diffusion region, wherein the first transfer element transfers the electric charge converted by the photoelectric conversion element to the accumulating element a plurality of times and causes the accumulating element to cumulatively accumulate the electric charge transferred the plurality of times.Type: ApplicationFiled: July 15, 2013Publication date: November 14, 2013Inventors: Shuichiro Sugiyama, Yuichiro Yamashita
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Patent number: 8564706Abstract: A solid-state imaging apparatus has a plurality of pixels, wherein each of the pixels includes: a photoelectric conversion element for converting incident light to an electric charge; an accumulating element accumulating the electric charge converted by the photoelectric conversion element; a first transfer element for transferring the electric charge converted by the photoelectric conversion element to the accumulating element; a second transfer element for transferring the electric charge accumulated in the accumulating element to a floating diffusion region; and an amplifying element for amplifying the electric charge in the floating diffusion region, wherein the first transfer element transfers the electric charge converted by the photoelectric conversion element to the accumulating element a plurality of times and causes the accumulating element to cumulatively accumulate the electric charge transferred the plurality of times.Type: GrantFiled: December 15, 2009Date of Patent: October 22, 2013Assignee: Canon Kabushiki KaishaInventors: Shuichiro Sugiyama, Yuichiro Yamashita
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Publication number: 20100165167Abstract: A solid-state imaging apparatus has a plurality of pixels, wherein each of the pixels includes: a photoelectric conversion element for converting incident light to an electric charge; an accumulating element accumulating the electric charge converted by the photoelectric conversion element; a first transfer element for transferring the electric charge converted by the photoelectric conversion element to the accumulating element; a second transfer element for transferring the electric charge accumulated in the accumulating element to a floating diffusion region; and an amplifying element for amplifying the electric charge in the floating diffusion region, wherein the first transfer element transfers the electric charge converted by the photoelectric conversion element to the accumulating element a plurality of times and causes the accumulating element to cumulatively accumulate the electric charge transferred the plurality of times.Type: ApplicationFiled: December 15, 2009Publication date: July 1, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Shuichiro Sugiyama, Yuichiro Yamashita
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Patent number: 6963120Abstract: A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction comprising an i-type amorphous semiconductor, a second pin junction comprising an i-type microcrystalline semiconductor, and a third pin junction comprising an i-type microcrystalline semiconductor provided in the mentioned order from a light incidence side, wherein at least a transparent protective member and a transparent electrode layer are provided on the light incidence side of the first pin junction, and wherein of the photocurrents generated at the plurality of pin junctions, the photocurrent generated at the third pin junction is the smallest.Type: GrantFiled: November 12, 2003Date of Patent: November 8, 2005Assignee: Canon Kabushiki KaishaInventors: Atsushi Shiozaki, Shuichiro Sugiyama
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Patent number: 6858308Abstract: The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.Type: GrantFiled: March 8, 2002Date of Patent: February 22, 2005Assignee: Canon Kabushiki KaishaInventors: Takaharu Kondo, Shotaro Okabe, Masafumi Sano, Akira Sakai, Ryo Hayashi, Shuichiro Sugiyama
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Patent number: 6800539Abstract: In a discharge space, a substrate 201 and a cathode 206 are disposed a distance d (cm) apart from each other, and gas containing one or more silicon compounds and hydrogen are introduced into the discharge space, and a product Pd of a film forming pressure P (Pa) and d, and a hydrogen flow rate M (SLM) are set so as to meet a relation: 80M+200≦Pd≦160M+333, and an RF power is applied to generate a plasma and a non-monocrystal silicon thin film is formed on the substrate 201 in the discharge space. Thereby, there is provided a thin film formation method making it possible to form an amorphous silicon film in which both a uniform film forming rate of a film distribution facilitating an implementation of a large area and a high conversion efficiency can be obtained while achieving an increase in the film forming rate.Type: GrantFiled: July 9, 2001Date of Patent: October 5, 2004Assignee: Canon Kabushiki KaishaInventors: Takahiro Yajima, Masahiro Kanai, Shuichiro Sugiyama
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Patent number: 6794275Abstract: In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provides a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.Type: GrantFiled: April 2, 2002Date of Patent: September 21, 2004Assignee: Canon Kabushiki KaishaInventors: Takaharu Kondo, Shotaro Okabe, Masafumi Sano, Akira Sakai, Yuzo Koda, Ryo Hayashi, Shuichiro Sugiyama, Koichiro Moriyama
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Publication number: 20040149988Abstract: A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction comprising an i-type amorphous semiconductor, a second pin junction comprising an i-type microcrystalline semiconductor, and a third pin junction comprising an i-type microcrystalline semiconductor provided in the mentioned order from a light incidence side, wherein at least a transparent protective member and a transparent electrode layer are provided on the light incidence side of the first pin junction, and wherein of the photocurrents generated at the plurality of pin junctions, the photocurrent generated at the third pin junction is the smallest.Type: ApplicationFiled: November 12, 2003Publication date: August 5, 2004Applicant: Canon Kabushiki KaishaInventors: Atsushi Shiozaki, Shuichiro Sugiyama
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Publication number: 20040149330Abstract: Provided is a stacked photovoltaic device characterized in that: a first i-type semiconductor layer comprises amorphous silicon hydride, and second and subsequent i-type semiconductor layers comprise amorphous silicon hydride or microcrystalline silicon, the i-type semiconductor layers being stacked in order from a light incidence side; and when an open circuit voltage is assigned Voc in the case where a pin photoelectric single element is manufactured using a pin element having the i-type semiconductor layer made of microcrystalline silicon of pin elements having the second and subsequent i-type semiconductor layers, respectively, and a layer thickness of the i-type semiconductor layer concerned is assigned t, a short-circuit photoelectric current density of the stacked photovoltaic device is controlled by the pin element including the i-type semiconductor layer having the largest value of Voc/t.Type: ApplicationFiled: November 12, 2003Publication date: August 5, 2004Applicant: Canon Kabushiki KaishaInventors: Shuichiro Sugiyama, Atsushi Shiozaki, Yasuyoshi Takai, Hidetoshi Tsuzuki
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Patent number: 6737123Abstract: A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.Type: GrantFiled: June 12, 2002Date of Patent: May 18, 2004Assignee: Canon Kabushiki KaishaInventors: Takaharu Kondo, Masafumi Sano, Akira Sakai, Tadashi Sawayama, Ryo Hayashi, Shuichiro Sugiyama, Hiroyuki Ozaki, Yoshinori Sugiura
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Publication number: 20030143822Abstract: A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.Type: ApplicationFiled: June 12, 2002Publication date: July 31, 2003Inventors: Takaharu Kondo, Masafumi Sano, Akira Sakai, Tadashi Sawayama, Ryo Hayashi, Shuichiro Sugiyama, Hiroyuki Ozaki, Yoshinori Sugiura
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Publication number: 20030104664Abstract: In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provide a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.Type: ApplicationFiled: April 2, 2002Publication date: June 5, 2003Inventors: Takaharu Kondo, Shotaro Okabe, Masafumi Sano, Akira Sakai, Yuzo Koda, Ryo Hayashi, Shuichiro Sugiyama, Koichiro Moriyama
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Publication number: 20030075717Abstract: The present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, the element being characterized in that at least one of the silicon-based films contains a microcrystal, and microcrystal located in at least one interface region of the silicon-based films containing the microcrystal has no orientation property. Further, the present invention provides a semiconductor element comprising a semiconductor junction composed of silicon-based films, wherein at least one of the silicon-based films contains a microcrystal, and the orientation property of the microcrystal in the silicon-based film containing the microcrystal changes in a film thickness direction of the silicon-based film containing the microcrystal.Type: ApplicationFiled: March 8, 2002Publication date: April 24, 2003Inventors: Takaharu Kondo, Shotaro Okabe, Masafumi Sano, Akira Sakai, Ryo Hayashi, Shuichiro Sugiyama
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Patent number: 6531654Abstract: In a semiconductor thin-film formation process comprising feeding a semiconductor thin-film material gas into a discharge space, and applying a high-frequency power thereto to cause plasma to take place and decompose the material gas to form an amorphous semiconductor thin film on a desired substrate, the high-frequency power is applied changing its power density continuously or stepwise from a high power density to a low power density and thereafter again changing the power density continuously or stepwise from a low power density to a high power density, to form a semiconductor thin film made different in film quality in the direction of layer thickness while retaining the same conductivity type. This process enable formation of high-quality semiconductor thin films by plasma CVD.Type: GrantFiled: May 22, 2001Date of Patent: March 11, 2003Assignee: Canon Kabushiki KaishaInventors: Shuichiro Sugiyama, Masahiro Kanai, Takahiro Yajima
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Publication number: 20020039832Abstract: In a discharge space, a substrate 201 and a cathode 206 are disposed a distance d (cm) apart from each other, and gas containing one or more silicon compounds and hydrogen are introduced into the discharge space, and a product Pd of a film forming pressure P (Pa) and d, and a hydrogen flow rate M (SLM) are set so as to meet a relation:Type: ApplicationFiled: July 9, 2001Publication date: April 4, 2002Inventors: Takahiro Yajima, Masahiro Kanai, Shuichiro Sugiyama
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Publication number: 20020022349Abstract: In a semiconductor thin-film formation process comprising feeding a semiconductor thin-film material gas into a discharge space, and applying a high-frequency power thereto to cause plasma to take place and decompose the material gas to form an amorphous semiconductor thin film on a desired substrate, the high-frequency power is applied changing its power density continuously or stepwise from a high power density to a low power density and thereafter again changing the power density continuously or stepwise from a low power density to a high power density, to form a semiconductor thin film made different in film quality in the direction of layer thickness while retaining the same conductivity type This process enables formation of high-quality semiconductor thin films by plasma CVD.Type: ApplicationFiled: May 22, 2001Publication date: February 21, 2002Inventors: Shuichiro Sugiyama, Masahiro Kanai, Takahiro Yajima
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Patent number: 5700326Abstract: A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.Type: GrantFiled: February 27, 1995Date of Patent: December 23, 1997Assignee: Canon Kabushiki KaishaInventors: Kazumasa Takatsu, Takashi Kurokawa, Hiroshi Echizen, Akio Koganei, Shuichiro Sugiyama, Toshio Adachi