Abstract: The present invention provides a bonding method in semiconductor manufacturing process and a bonding structure formed using the same, which can achieve wafer-level bonding under a condition of normal temperature and low pressure. The bonding method comprises generating bonding structures capable of being mutually mechanical interlocked, wherein the frictional heat generated by the bonding structures capable of being mutually mechanical interlocked is higher than the bonding energy therebetween, and utilizing the frictional heat generated by the bonding structures capable of being mutually mechanical interlocked to bond the bonding structures capable of being mutually mechanical interlocked.

Abstract: In view of the problems in all existing bonding methods, such as high temperature, high pressure, and high surface modification cost, etc., the present invention provides a bonding method and a bonding structure formed using the same, which can overcome such drawbacks and also achieve wafer-level bonding under a condition of normal temperature and low pressure. The bonding method comprises: generating bonding structures capable of being mutually mechanical interlocked, wherein, the frictional heat generated by the bonding structures capable of being mutually mechanical interlocked is higher than the bonding energy therebetween; and, utilizing the frictional heat generated by the bonding structures capable of being mutually mechanical interlocked to bond the bonding structures capable of being mutually mechanical interlocked.