Abstract: A light emitting device includes a light-emitting laminate and an insulating reflective structure. The insulating reflective structure includes n pairs of dielectric layers stacked on the light-emitting laminate. Each of the n pairs of dielectric layers includes a first material layer and a second material layer. The first material layer has a first refractive index, and the second material layer has a second refractive index that is greater than the first refractive index of the first material layer. For each pair of dielectric layers among m1 pairs of dielectric layers out of the n pairs of dielectric layers, the first material layer has an optical thickness that is greater than that of the second material layer, where 0.5n?m1?n, and n and m1 are natural numbers greater than 0.

Abstract: Provided are an LED chip and a light emitting device, which include a light emitting epitaxial layer, a first insulating layer covering the light emitting epitaxial layer, and a first pad and a second pad located on the first insulating layer. Each of the first pad and the second pad includes a stress buffer layer, a nickel metal layer, and a protective layer. The stress buffer layer includes aluminum metal layers; and by adjusting the thickness distribution of the aluminum metal layers, an aluminum metal layer closest to the nickel metal layer is set to be the thickest, and the aluminum metal layers are thickened, especially the thickness of the aluminum metal layer closest to the nickel metal layer is greater than or equal to the thickness of the nickel metal layer, therefore, the ductility and tensile property of aluminum metal are utilized to play a role in stress buffering.

Abstract: A flip-chip light emitting diode includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The light emitting layer is located between the first semiconductor layer and the second semiconductor layer. The first electrode is located on the epitaxial structure and is electrically connected to the first semiconductor layer. The second electrode is located on the epitaxial structure and is electrically connected to the second semiconductor layer. The first electrode and/or the second electrode is a multilayer metal structure. The multilayer metal structure includes a metal reflective layer, a first barrier layer, and a conductive metal layer stacked in sequence on the first semiconductor layer. A thickest layer in the multilayer metal structure is the conductive metal layer, and the conductive metal layer is an Al layer.

Abstract: A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 ?m. A display apparatus and a lighting apparatus are also disclosed.

Abstract: A flip light-emitting diode (LED) and a semiconductor light-emitting device are provided. The flip-chip LED includes a substrate, a semiconductor stacking layer formed on a first surface of the substrate for radiating light, and an optical thin film stacking layer formed on a second surface of the substrate and including a first reflective film group. The first reflective film group includes a first material layer and a second material layer repeatedly stacked. Optical thicknesses of the first and second material layers meet: the first reflective film group reflects a light with a wavelength in a range from 420 nm to 480 nm and at an incident angle being a first angle, and partially transmits a light with the wavelength and at an incident angle being a second angle, and the first angle is smaller than the second angle. The brightness of the flip-chip LED can be improved.

Abstract: A light emitting diode device includes a substrate having a substrate surface, an epitaxial structure having an epitaxial surface opposite to the substrate surface, and a plurality of bridging electrodes disposed on the epitaxial surface. The epitaxial structure includes first, second and third light emitting units spacedly and sequentially disposed on the substrate surface. A projection of the second light emitting unit has a first edge and a second edge that is connected with and perpendicular to the first edge. The epitaxial surface has an operating zone on the second light emitting unit that is adapted to be pushed by an ejector pin. A length of the second edge is equal to or greater than a diameter of the operating zone.

Abstract: A light-emitting device includes a substrate, a first and second mesa structures disposed on the substrate, at least one current blocking element, at least one conductive bridging element, and first and second conductive pads. The conductive bridging element is disposed on the current blocking element, and is electrically connected to the first and second mesa structures. The first and second conductive pads are electrically connected to the first and second mesa structures, respectively. The conductive bridging element has a projection image that is spaced apart from those of the first and second conductive pads in a plan view of the light-emitting device. A light-emitting module including the light-emitting device, and a display apparatus including the light-emitting device are also disclosed.