Abstract: A driving substrate, a light-emitting apparatus and a manufacturing method thereof, a splicing display apparatus, the driving substrate includes: a device disposing area, a bending area and a bonding area, the bending area is located between the device disposing area and the bonding area; the driving substrates located in the device disposing area, the bending area, and the bonding area include a buffer layer, a first conductive layer and a flexible dielectric layer that are stacked in sequence; the driving substrates located in the device disposing area and the bonding area further include a base plate disposed at a side of the buffer layer away from the first conductive layer, and a second conductive layer disposed at a side of the flexible dielectric layer away from the first conductive layer; and the driving substrate located in the bending area is configured to be able to bend along a bending axis.

Abstract: The present disclosure provides a microfluidic substrate, a microfluidic chip and a micro total analysis system. The microfluidic substrate includes a substrate and an ultrasonic structure on the substrate. The ultrasonic structure is configured to generate ultrasonic waves during a droplet splitting process to vibrate a droplet.

Abstract: At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.

Abstract: The present disclosure provides a display substrate including: a base substrate, and a thin film transistor, an oxygen supplementing functional layer and an oxygen containing layer formed on the base substrate. The thin film transistor includes: an active layer in direct contact with the oxygen containing layer, and the active layer includes an oxide semiconductor material. The oxygen supplementing functional layer includes a metal oxide material and serves as a first electrode of the display substrate. The oxygen containing layer is between the oxygen supplementing functional layer and the base substrate.

Abstract: The present disclosure relates to a display substrate, a display device and a manufacturing method of the display substrate. The display substrate includes: a stretchable base including a plurality of opening patterns distributed along a surface of the stretchable base, wherein each of the plurality of opening patterns includes a plurality of opening areas, a plurality of bridge areas configured to enclose a first island area are formed between adjacent opening areas among the plurality of opening areas, and each of the plurality of opening patterns is configured to enclose a plurality of second island areas with at least two adjacent opening patterns; a plurality of display units respectively arranged on the first island area and the plurality of second island areas; and a plurality of signal lines respectively connected between the plurality of display units and respectively arranged in the plurality of bridge areas.

Abstract: A display panel and a manufacturing method thereof, and a display device. The display panel includes a light guide plate, an array substrate, a liquid crystal layer between the light guide plate and the array substrate, a plurality of light-extracting gratings located on one side of a light exit surface of the light guide plate, and a transparent protection layer between a film layer where the light-extracting gratings are located and the light guide plate. The light guide plate includes a plurality of light-extracting port areas, and transparent areas besides the light-extracting port areas; each light-extracting port area is provided with one light-extracting grating; the protection layer is at least provided on the transparent areas, and the protection layer is configured to prevent the light guide plate in the transparent areas from being excessively etched to form a plurality of depressions.

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

Abstract: A thin film transistor includes an active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the active layer perpendicular to a thickness direction of the active layer, and is in contact with the active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material. A porosity of the first loose layer is different from a porosity of the first oxygen release layer, and/or an oxygen content of the first loose layer is different from an oxygen content of the first oxygen release layer.

Abstract: A shift register unit includes an input sub-circuit, a pull-down node driving sub-circuit and an output sub-circuit. The pull-down node driving sub-circuit includes a first connection unit, a first voltage-reduction unit and a second connection unit, and configured to: under the control of the first voltage signal terminal and the pull-up node, transmit a first voltage signal from the first voltage signal terminal to the first pull-down node via the first connection unit, and reduce a voltage applied to the second connection unit via the first voltage-reduction unit; and transmit a second voltage signal from the second voltage signal terminal to the first pull-down node via the second connection unit under the control of the pull-up node.

Abstract: Disclosed are a thin-film transistor and a preparation method therefor, and a display substrate and a display panel. The thin-film transistor includes: a base substrate; an active layer located on the base substrate; and a source-drain electrode which is located on the side of the active layer facing away from the base substrate, and includes an electrode layer and a protective layer, where the material of the electrode layer includes a first metal element; the protective layer covers the surface of the side of the electrode layer facing away from the base substrate, and a side face of the electrode layer; and the material of the protective layer is an oxide of the first metal element.

Abstract: A method of manufacturing a metal wire, a method of manufacturing a metal wire grid, a wire grid polarizer, and an electronic device are provided. The method of manufacturing a metal wire includes: forming a metal material layer on a base substrate; etching the metal material layer by using a composite gas including an etching gas and a coating reaction gas to form the metal wire and a protective coating layer on a surface of the metal wire.

Abstract: An oxide thin film transistor includes an oxide active layer, a first loose layer and a first oxygen release layer. The first loose layer is at least disposed on a first surface of the oxide active layer perpendicular to a thickness direction of the oxide active layer, and is in contact with the oxide active layer. A material of the first loose layer includes a first inorganic oxide insulating material. The first oxygen release layer is disposed on a surface of the first loose layer facing away from the oxide active layer, and is in contact with the first loose layer. A material of the first oxygen release layer is a first oxygen-containing insulating material.

Abstract: An array substrate and a method for manufacturing the same, a method and assembly for detecting light, and a display device are provided. The array substrate includes: a base substrate having a pixel region; a light detecting unit, a switch unit, and a light emitting unit that are located in the pixel region, where the light emitting unit and the light detecting unit share the switch unit.

Abstract: The present disclosure provides a binding backplane and a manufacturing method thereof, a backlight module and a display device. The binding backplane includes: a substrate; a first trace layer on the substrate; a planarizing layer on a side of the first trace layer away from the substrate; a second trace layer on the planarizing layer and including a connecting portion and a binding portion; a surface protective layer on the second trace layer away and exposing the binding portion; and a conductive reflection structure on a side of the surface protective layer close to the substrate, wherein the conductive reflection structure includes a grounding portion, a distance between a surface of the grounding portion away from the substrate and the substrate is not greater than a distance between a surface of the binding portion away from the substrate and the substrate.

Abstract: The present disclosure provides a polarizing device and a method for preparing the same, a display substrate, and a display device. The polarizing device includes: a base substrate, a metal wire grid, and an anti-reflection layer, in which the metal wire grid is arranged on the base substrate, the anti-reflection layer is arranged on the surface of the metal wire grid away from the base substrate, and the anti-reflection layer is a carbon film layer.

Abstract: The present application discloses a semiconductor apparatus, a pixel circuit and a control method thereof. The semiconductor apparatus comprises: an active layer; a first insulating layer; a first gate and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively; a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are electrically connected with a first portion and a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate; or the third electrode is electrically connected with a third portion of the active layer.

Abstract: The present disclosure provides a binding backplane and a manufacturing method thereof, a backlight module and a display device. The binding backplane includes: a substrate; a first trace layer on the substrate; a planarizing layer on a side of the first trace layer away from the substrate; a second trace layer on the planarizing layer and including a connecting portion and a binding portion; a surface protective layer on the second trace layer away and exposing the binding portion; and a conductive reflection structure on a side of the surface protective layer close to the substrate, wherein the conductive reflection structure includes a grounding portion, a distance between a surface of the grounding portion away from the substrate and the substrate is not greater than a distance between a surface of the binding portion away from the substrate and the substrate.

Abstract: An array substrate is provided. The array substrate includes a display area having a first array of subpixels; and a partially transparent area having a second array of subpixels. The partially transparent area includes a plurality of light emitting regions spaced apart from each other by a substantially transparent non-light emitting region. The second array of subpixels is limited in the plurality of light emitting regions. The array substrate further includes a plurality of photosensors and a plurality of first thin film transistors in the substantially transparent non-light emitting region. A respective one of the plurality of photosensors includes a first polarity semiconductor layer, a second polarity semiconductor layer, and an intrinsic semiconductor layer connecting the first polarity semiconductor layer and the second polarity semiconductor layer.

Abstract: A display substrate is provided, which includes a base substrate and a plurality of sub-pixels disposed on the base substrate. At least one sub-pixel includes a light transmittance region and a display region. The display region includes a circuit structure layer and a light-emitting element which are disposed on a base substrate, and the light-emitting element is connected with the circuit structure layer. The display substrate further includes a plurality of insulating layers disposed on the base substrate, and at least one insulating layer is hollowed out in the light transmittance region.