Abstract: Disclosed are a chip on film, a manufacturing method thereof, and a display apparatus. The chip on film includes: at least one substrate layer; a plurality of pads on the at least one substrate layer; a plurality of first leads on the at least one substrate layer and electrically connected to part of the pads; and a plurality of second leads on a side of each substrate layer away from the layer where the plurality of pads are located, and electrically connected to the rest of the pads.

Abstract: A driving substrate, a light-emitting apparatus and a manufacturing method thereof, a splicing display apparatus, the driving substrate includes: a device disposing area, a bending area and a bonding area, the bending area is located between the device disposing area and the bonding area; the driving substrates located in the device disposing area, the bending area, and the bonding area include a buffer layer, a first conductive layer and a flexible dielectric layer that are stacked in sequence; the driving substrates located in the device disposing area and the bonding area further include a base plate disposed at a side of the buffer layer away from the first conductive layer, and a second conductive layer disposed at a side of the flexible dielectric layer away from the first conductive layer; and the driving substrate located in the bending area is configured to be able to bend along a bending axis.

Abstract: An oxide thin film transistor, a preparation method thereof, and an electronic device are provided. The oxide thin film transistor includes a base substrate, a gate electrode and a metal oxide semiconductor layer, a gate insulation layer arranged between the metal oxide semiconductor layer and the gate electrode; the gate insulation layer includes a silicon oxide insulation layer and a silicon nitride layer, the silicon nitride layer adopts a single-layer structure or include a plurality of silicon nitride sublayers which are sequentially stacked, the silicon oxide insulation layer is between the silicon nitride layer and the metal oxide semiconductor layer; at least a part of a region in the silicon nitride layer satisfies that the percentage content of Si—H bonds in the sum of Si—N bonds, N—H bonds and Si—H bonds is not more than 7.

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

Abstract: A display substrate is provided, the display substrate has a plurality of sub-pixels arranged in an array, and includes a driving circuit substrate, a plurality of first electrodes, a pixel definition layer and a light-emitting material layer. The pixel definition layer is at least on a side of the plurality of first electrodes away from the driving circuit substrate, and includes a plurality of sub-pixel openings respectively exposing the plurality of first electrodes and at least one partition structure on the pixel definition layer. The light-emitting material layer is on a side of the pixel definition layer away from the driving circuit substrate and at least in the plurality of sub-pixel openings, the pixel definition layer includes a first pixel definition sub-layer and a second pixel definition sub-layer, and a width of the second pixel definition sub-layer is greater than a width of the first pixel defining sub-layer.

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. In the present disclosure, a first transistor group with oxide semiconductor as an active layer material is disposed on a side of a second transistor group with polysilicon as an active layer material away from the base, and an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base. Stable performance of the transistors included can be ensured in a manufacturing process of the first transistor group and the second transistor group located in different layers, and at the same time, an area occupied by the driving circuit can be reduced so as to decrease a frame width of a display apparatus or improve resolution of the display apparatus.

Abstract: A display substrate is provided, which includes a base substrate and a plurality of sub-pixels disposed on the base substrate. At least one sub-pixel includes a light transmittance region and a display region. The display region includes a circuit structure layer and a light-emitting element which are disposed on a base substrate, and the light-emitting element is connected with the circuit structure layer. The display substrate further includes a plurality of insulating layers disposed on the base substrate, and at least one insulating layer is hollowed in the light transmittance region.

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

Abstract: A light-emitting substrate includes a driving circuit layer, a first light-emitting layer located on a side of the driving circuit layer, a second light-emitting layer located on a side of the first light-emitting layer away from the driving circuit layer, and a third light-emitting layer located on a side of the second light-emitting layer away from the driving circuit layer. The pixel circuit layer includes pixel circuits. The first light-emitting layer includes first light-emitting devices respectively coupled to the pixel circuits. The second light-emitting layer includes second light-emitting devices respectively coupled to the pixel circuits. The third light-emitting layer includes third light-emitting devices respectively coupled to the pixel circuits. Orthographic projections of a first light-emitting device, a second light-emitting device and a third light-emitting device on the driving circuit layer do not necessarily coincide with each other.

Abstract: A chip on film includes: a flexible substrate; and a multilayer wiring structure disposed on the flexible substrate. The multilayer wiring structure includes a first wiring layer, a first insulation layer and a second wiring layer, which are sequentially arranged in a direction towards the flexible substrate the flexible substrate. The first wiring layer includes a first conductive material and the second wiring layer includes a second conductive material. The chip on film further includes: pins, at least part of which are in the first wiring layer; first via holes in the first insulation layer; and a second wire and a second wire leading portion in the second wiring layer, which are electrically connected to each other. More than one pin is electrically connected to the second wire leading portion through more than one first via hole, respectively.

Abstract: Embodiments of the present disclosure provide a circuit board, a display apparatus, and a manufacturing method for a circuit board. The manufacturing method for the circuit board includes: providing a precursor substrate; forming seed patterns and an auxiliary seed pattern on a side of the precursor substrate, where the seed patterns are located in the patterned areas, the auxiliary seed pattern is located in the non-patterned area, and the seed pattern and the auxiliary seed pattern are separated from each other; and forming a pad at a position of the seed pattern and an auxiliary pattern at a position of the auxiliary seed pattern by an electroplating process.

Abstract: A display substrate is provided, which includes a base substrate and a plurality of sub-pixels disposed on the base substrate. At least one sub-pixel includes a light transmittance region and a display region. The display region includes a circuit structure layer and a light-emitting element which are disposed on a base substrate, and the light-emitting element is connected with the circuit structure layer. The display substrate further includes a plurality of insulating layers disposed on the base substrate, and at least one insulating layer is hollowed out in the light transmittance region.

Abstract: A display device and a manufacturing method therefor are provided by the present application. The display devices can greatly increase the bonding precision of the chip packaging unit and the display panel, thereby the quantity of the output channels of chip packaging unit are greatly increased, thus the requirements of the high-resolution display products are satisfied. A chip packaging component is formed, wherein the chip packaging component includes at least one chip packaging unit; and the chip packaging unit includes at least a flexible base, a rigid base disposed at one side of the flexible base, and a lead layer disposed at one side of the flexible base away from the rigid base, lead layer includes at least a plurality of first leads, and orthographic projections of the plurality of first leads on the flexible base are located within an orthographic projection of rigid base on the flexible base.

Abstract: A display substrate is provided, the display substrate has a plurality of sub-pixels arranged in an array, and includes a driving circuit substrate, a plurality of first electrodes, a pixel definition layer and a light-emitting material layer. The pixel definition layer is at least on a side of the plurality of first electrodes away from the driving circuit substrate, and includes a plurality of sub-pixel openings respectively exposing the plurality of first electrodes and at least one partition structure on the pixel definition layer. The light-emitting material layer is on a side of the pixel definition layer away from the driving circuit substrate and at least in the plurality of sub-pixel openings, the pixel definition layer includes a first pixel definition sub-layer and a second pixel definition sub-layer, and a width of the second pixel definition sub-layer is greater than a width of the first pixel defining sub-layer.

Abstract: A driving base plate includes a functional region (A) and a peripheral region (B) surrounding the functional region (A). Both the functional region (A) and the peripheral region (B) include a supporting substrate, and the functional region (A) further includes a flexible substrate and at least one protecting layer that are sequentially arranged on the supporting substrate. The region of the orthographic projection of the flexible substrate on the supporting substrate is located within the region where the supporting substrate within the functional region (A) is located, and the protecting layer covers the surface of the flexible substrate further from the supporting substrate and the side of the flexible substrate close to the peripheral region (B). The adhesive force between the flexible substrate and the supporting substrate of the driving base plate is increased, and the reliability of the products manufactured by using the driving base plate is improved.

Abstract: A display panel and a display device are provided. The display panel includes a plurality of display units, each display unit includes a transparent area, and the display panel further includes a base substrate and a composite functional layer. The composite functional layer is provided on a side of the base substrate and has a first through-hole formed therein, and the first through-hole is provided in the transparent area. The composite functional layer includes a composite transparent layer and a light-shielding layer. The composite transparent layer includes a plurality of transparent functional layers, and includes a light-transmitting part surrounding the first through-hole. An orthographic projection of the light-shielding layer on the base substrate covers an orthographic projection of at least a portion of the light-transmitting part on the base substrate.

Abstract: A metal oxide thin film transistor is provided, which includes a metal oxide semiconductor layer, including a first semiconductor layer and a second semiconductor layer, the carrier mobility of the first semiconductor layer is higher than that of the second semiconductor layer; the metal oxide semiconductor layer includes a lower surface, an upper surface and a lateral surface, the source electrode is in contact with the lateral surface and the upper surface; the region where the lateral surface contacts the source electrode or the drain electrode includes a first contact region and a second contact region; which have the shape: a first angle between the lower surface of the metal oxide semiconductor layer and the lateral surface of the first contact region is larger than a second angle between the lower surface of the metal oxide semiconductor layer and the lateral surface of the second contact region.

Abstract: A driving substrate, a light-emitting apparatus and a manufacturing method thereof, a splicing display apparatus, the driving substrate includes: a device disposing area, a bending area and a bonding area, the bending area is located between the device disposing area and the bonding area; the driving substrates located in the device disposing area, the bending area, and the bonding area include a buffer layer, a first conductive layer and a flexible dielectric layer that are stacked in sequence; the driving substrates located in the device disposing area and the bonding area further include a base plate disposed at a side of the buffer layer away from the first conductive layer, and a second conductive layer disposed at a side of the flexible dielectric layer away from the first conductive layer; and the driving substrate located in the bending area is configured to be able to bend along a bending axis.

Abstract: A display substrate is provided, the display substrate has a plurality of sub-pixels, and includes a driving circuit substrate, a plurality of first electrodes, a pixel definition layer and a light-emitting material layer. The driving circuit substrate includes a plurality of pixel driving circuits and a protective insulating layer, the protective insulating layer includes a plurality of first vias, and the plurality of first electrodes are respectively electrically connected to the output terminals of the plurality of pixel driving circuits through the first vias. The pixel definition layer includes a plurality of sub-pixel openings and at least one partition structure. The light-emitting material layer at least in the plurality of sub-pixel openings, the pixel definition layer includes a first pixel definition sub-layer and a second pixel definition sub-layer, and a width of the second pixel definition sub-layer is greater than a width of the first pixel defining sub-layer.

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. In the present disclosure, a first transistor group with oxide semiconductor as an active layer material is disposed on a side of a second transistor group with polysilicon as an active layer material away from the base, and an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base. Stable performance of the transistors included can be ensured in a manufacturing process of the first transistor group and the second transistor group located in different layers, and at the same time, an area occupied by the driving circuit can be reduced so as to decrease a frame width of a display apparatus or improve resolution of the display apparatus.