Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer. The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A micro light-emitting device includes a micro light-emitting diode, a base frame, and a bridging structure. The micro light-emitting diode includes a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer, an active layer, a first mesa surface, a second mesa surface, and a connecting wall, a first contact electrode, a second contact electrode, a first bonding electrode, and a second bonding electrode. The connecting wall cooperates with the first mesa surface to form a first included angle that ranges from 105° to 165°. A micro light-emitting diode and a method of manufacturing a micro light-emitting device are also provided.

Abstract: A light emitting assembly includes a micro-LED, and a supporting substrate, The micro-LED includes a semiconductor structure and a first insulating dielectric layer. The semiconductor structure includes a first-type semiconductor laver; second-type semiconductor layer, and has a first mesa surface defined by the first-type semiconductor layer, and a second mesa surface defined by the second-type semiconductor layer, The first insulating dielectric layer covers the first and second mesa surfaces and has a first mesa covering portion that covers the first mesa surface, and two bridging arms projecting from the first mesa covering portion. The two bridging arms are located on two opposite sides of the semiconductor structure and connect with the supporting substrate so that the micro-LED is supported by the supporting substrate. The two bridging arms have a thickness which is less than a thickness of the first mesa covering portion on the first mesa surface.

Abstract: A micro light-emitting diode (LED) includes an n-type layer, a transitional unit, a light-emitting unit disposed on the transitional unit, and a p-type layer disposed on the light-emitting unit. The transitional unit includes a first transitional layer, a second transitional layer and a third transitional layer that are sequentially disposed on the n-type layer in such order. The n-type layer, the first transitional layer, the second transitional layer, the third transitional layer and the light-emitting unit respectively have a bandgap of Egn, a bandgap of Eg1, a bandgap of Eg2, a bandgap of Eg3 and a bandgap of Ega which satisfy a relationship of Egn?Eg1>Eg2>Eg3>Ega.

Abstract: A light-emitting structure includes an n-type layer, an active layer, and a p-type layer. The active layer has N quantum well structure periods, each of the N quantum-well structure periods has a well layer and at least one barrier layer. The N quantum-well structure periods include a first light-emitting section and a second light-emitting section. The first light-emitting section is closer to the n-type layer than the second light-emitting section. A method for producing the light-emitting structure, and a light-emitting device that has the light-emitting structure are also disclosed.

Abstract: A micro light emitting diode includes a semiconductor unit having a first surface and a second surface, and including a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first surface has a roughened portion that is located within a projection of the active layer. The projection of the roughened portion has a projected area not greater than that of the active layer. A micro light emitting device and a display are also disclosed.

Abstract: A micro light-emitting device includes an epitaxial unit and a current-spreading layer. The epitaxial unit has a top portion that includes an ohmic contact region and a non-ohmic contact region. The top portion has a periphery area which forms at least a part of the non-ohmic contact region. The periphery area has a reduced conductivity compared with the remainder of the top portion. The current-spreading layer is disposed on the ohmic contact region. A method for making the micro light-emitting device, and a display screen including the same are also disclosed.

Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.

Abstract: A light-emitting device includes an LED chip disposed on a supporting component. The LED chip includes a semiconductor stack formed on a substrate, a first electrode, and a second electrode. A light-blocking layer fills the supporting component to cover a lateral side of the LED chip and expose a top chip surface of the LED chip. The light-blocking layer has a top surface not lower than the top chip surface of the LED chip. A height difference among the top chip surface, the top surface of the light-blocking layer and a top end of the supporting component is less than 10 ?m. A top light exit port defined by the light-blocking layer to expose the top chip surface has a cross sectional area not larger than that of the top chip surface.

Abstract: An AlGaInP light-emitting diode includes from bottom up a substrate, a distributed Bragg reflector (DBR) reflecting layer, an N-type semiconductor layer, a quantum well light-emitting layer, a P-type semiconductor layer, a transient layer and a P-type current spreading layer. The DBR reflecting layer is multispectral-doping. The P-type semiconductor layer includes a first P-type semiconductor layer adjacent to the quantum well light-emitting layer and a second P-type semiconductor layer adjacent to the transient layer. A doping concentration of the second P-type semiconductor layer is lower than that of the first P-type semiconductor layer. By improving doping concentration of the multispectral DBR reflecting layer, current spreading can be improved, thus improving aging performance. A concentration difference is formed with the transient layer to balance doping of the transient layer; this avoids increasing non-radiation composition from high doping of the transient layer during long-time aging.

Abstract: A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the epitaxial layer; temperature isolation layers are formed with low thermal conductivity material thereon to form three independent temperature zones (Zones I/II/III) on a single chip; temperature control layers are formed with high thermal conductivity material on the side wall of the epitaxial layer and the back surface of the substrate at Zones I/II/III, and control temperature of the epitaxial layer and the substrate; based on different thermal expansion coefficients, lattice constants of the nitride and the substrate at Zones I/II/III are regulated to adjust the biaxial stress to which the nitride; quantum wells change conduction band bottom and valence band top positions to change forbidden band widths and light-emitting wavelengths; the LED can emit red, green and blue lights by a single chip.

Abstract: An AlGaInP light-emitting diode includes from bottom up a substrate, a DBR reflecting layer, an N-type semiconductor layer, a quantum well light-emitting layer, a P-type semiconductor layer, a transient layer and a P-type current spreading layer. The DBR reflecting layer is multispectral-doping. The P-type semiconductor layer includes a first P-type semiconductor layer adjacent to the quantum well light-emitting layer and a second P-type semiconductor layer adjacent to the transient layer. A doping concentration of the second P-type semiconductor layer is lower than that of the first P-type semiconductor layer. By improving doping concentration of the multispectral DBR reflecting layer, current spreading can be improved, thus improving aging performance. A concentration difference is formed with the transient layer to balance doping of the transient layer; this avoids increasing non-radiation composition from high doping of the transient layer during long-time aging.

Abstract: A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the epitaxial layer; temperature isolation layers are formed with low thermal conductivity material thereon to form three independent temperature zones (Zones I/II/III) on a single chip; temperature control layers are formed with high thermal conductivity material on the side wall of the epitaxial layer and the back surface of the substrate at Zones I/II/III, and control temperature of the epitaxial layer and the substrate; based on different thermal expansion coefficients, lattice constants of the nitride and the substrate at Zones I/II/III are regulated to adjust the biaxial stress to which the nitride; quantum wells change conduction band bottom and valence band top positions to change forbidden band widths and light-emitting wavelengths; the LED can emit red, green and blue lights by a single chip.

Abstract: A nitride light emitting diode includes: an n-type nitride layer, a light emitting layer and a p-type nitride layer in sequence, wherein, the light emitting layer is a MQW structure composed of a barrier layer and a well layer, in which, an AlGaN electron tunneling layer is inserted into at least one well layer closing to the n-type nitride layer with barrier height greater than that of the barrier layer; in addition, the barriers of the AlGaN electron tunneling layer and the well layer are high enough so that electrons are difficult to transit towards thermionic emission direction, but mainly transit through tunneling in the InGaN well layers, which confines electron mobility and adjusts electron distribution. Hence, electrons have less chance to spill over into the P-type nitride layer.

Abstract: A light emitting diode (LED) includes quantum dots serving as the quantum well layer in the multiple-quantum well (MQW) structure, which can greatly improve the combination efficiency of electrons and holes due to quantum confinement effect; a nanoscale metal reflective layer is formed between the quantum barrier layer with nanoscale pits to instantly reflect the light emitted downwards from the MQW to the front of epitaxial structure; in addition, the nanoscale metal reflective layer can form surface plasmon to further improve light emitting efficiency.

Abstract: A semiconductor light-emitting device is configured to prevent or reduce metal migration. The device includes: an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a reflecting layer disposed over the p-type semiconductor layer and containing a metal that tends to migrate; a well ring structure at the p-type semiconductor layer and substantially surrounding the reflecting layer to prevent the metal from migrating towards a side wall of the device; and a metal coating layer over the reflecting layer and extending towards the well ring structure to form an ohmic contact with the p-type semiconductor of the entire well ring structure. The device reliability is improved as the p-type semiconductor layer forms a well ring structure have “pining” effect surrounding the reflecting layer, thereby preventing the metal from migrating towards the device edge along the contact surface between the reflecting layer and the p-type semiconductor.

Abstract: A light-emitting device of little aging electric leakage and high luminous efficiency and fabrication thereof, in which, the light-emitting device includes: a semiconductor epitaxial laminated layer that comprises an N-type semiconductor layer, a P-type semiconductor layer and a light-emitting layer between the N-type semiconductor layer and the P-type semiconductor layer, the surface of which has deflected dislocation; electromigration resistant metal that fills into the deflected dislocation over the N-type or/and P-type semiconductor layer surface through pretreatment to block the electromigration channel formed over the semiconductor epitaxial laminated layer due to deflected dislocation to eliminate electric leakage.

Abstract: A light-emitting device of little aging electric leakage and high luminous efficiency and fabrication thereof, in which, the light-emitting device includes: a semiconductor epitaxial laminated layer that comprises an N-type semiconductor layer, a P-type semiconductor layer and a light-emitting layer between the N-type semiconductor layer and the P-type semiconductor layer, the surface of which has deflected dislocation; electromigration resistant metal that fills into the deflected dislocation over the N-type or/and P-type semiconductor layer surface through pretreatment to block the electromigration channel formed over the semiconductor epitaxial laminated layer due to deflected dislocation to eliminate electric leakage.

Abstract: A semiconductor light-emitting device is configured to prevent or reduce metal migration. The device includes: an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a reflecting layer disposed over the p-type semiconductor layer and containing a metal that tends to migrate; a well ring structure at the p-type semiconductor layer and substantially surrounding the reflecting layer to prevent the metal from migrating towards a side wall of the device; and a metal coating layer over the reflecting layer and extending towards the well ring structure to form an ohmic contact with the p-type semiconductor of the entire well ring structure. The device reliability is improved as the p-type semiconductor layer forms a well ring structure have “pining” effect surrounding the reflecting layer, thereby preventing the metal from migrating towards the device edge along the contact surface between the reflecting layer and the p-type semiconductor.