Patents by Inventor Shuit-Tong Lee
Shuit-Tong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9269908Abstract: The present invention provides a bipolar compound represented by formula (I) and the derivatives thereof as a host material having excellent bipolar transporting properties for organic light-emitting diodes (OLEDs). The present invention also relates to a device including at least a layer of the bipolar compound and/or the derivatives thereof as a host material and a method of making the same.Type: GrantFiled: April 19, 2012Date of Patent: February 23, 2016Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITEDInventors: Chun Sing Lee, Xiao Hong Zhang, Shuit Tong Lee, Caijun Zheng, Man Keung Fung
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Publication number: 20130099207Abstract: The present invention provides a bipolar compound represented by formula (I) and the derivatives thereof as a host material having excellent bipolar transporting properties for organic light-emitting diodes (OLEDs). The present invention also relates to a device including at least a layer of the bipolar compound and/or the derivatives thereof as a host material and a method of making the same.Type: ApplicationFiled: April 19, 2012Publication date: April 25, 2013Applicant: NANO AND ADVANCED MATERIALS INSTITUTE LIMITEDInventors: Chun Sing LEE, Xiao Hong ZHANG, Shuit Tong LEE, Caijun ZHENG, Man Keung FUNG
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Patent number: 8217371Abstract: A luminescent system includes a layer of donor material, an acceptor material and a barrier layer therebetween. The energy transfer between the donor and acceptor is biased to the acceptor layer, by an asymmetric energy transfer efficiency created by the barrier layer. Energy from the donor material is converted into photo-luminescence in the acceptor layer by discouraging photo-luminescence quenching caused by energy backflow.Type: GrantFiled: August 14, 2008Date of Patent: July 10, 2012Assignee: City University of Hong KongInventors: Shuit Tong Lee, Dorothy Duoduo Ma
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Patent number: 8158011Abstract: A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the cBN film, and (e) etching the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.Type: GrantFiled: October 14, 2008Date of Patent: April 17, 2012Assignee: City University of Hong KongInventors: Wen-Jun Zhang, Igor Bello, Shuit-Tong Lee, You-Sheng Zou, Yat Ming Chong, Qing Ye
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Patent number: 8119254Abstract: There are disclosed rare-earth metal containing electron-injecting electrodes which are particularly effective for use with organic LED devices used in electroluminescent structures and which may in particular be formed as transparent electrodes for use in transparent or surface emitting OLEDs.Type: GrantFiled: September 27, 2005Date of Patent: February 21, 2012Assignee: City University of Hong KongInventors: Shuit-Tong Lee, Chun-Sing Lee, Shiu-Lun Lai, Mei-Yee Chan
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Patent number: 8101290Abstract: Disclosed herein are several organic compounds having electron-transporting and/or hole-blocking performance and their preparation method and use and the OLEDs comprising the organic compound. The organic compounds exhibit high ionization potential (IP), electron affinity (Ea), glass transition temperature (Tg) and high electron mobility, and are a kind of good electron-transporting material with good hole-blocking ability. The devices comprising these compounds as one of the emitting layer, electron-transporting layer (ETL) and hole-blocking layer (HBL) show improved efficiency and better color purity.Type: GrantFiled: October 15, 2008Date of Patent: January 24, 2012Assignee: Technical Institute of Physics and Chemistry of Chinese Academy of SciencesInventors: PengFei Wang, Na Li, Weimin Liu, Shuit-Tong Lee, Chun-Sing Lee
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Patent number: 8101526Abstract: A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.Type: GrantFiled: March 12, 2008Date of Patent: January 24, 2012Assignee: City University of Hong KongInventors: Shuit-Tong Lee, Wenjun Zhang, Igor Bello, You-Sheng Zou
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Patent number: 8048541Abstract: An electroluminescence device has an anode, a cathode and an emitting layer located between the anode and the cathode. The emitting layer contains a compound selected from a group consisting of neutral red and its derivatives.Type: GrantFiled: December 17, 2008Date of Patent: November 1, 2011Assignee: City University of Hong KongInventors: Shuit-Tong Lee, Chun Sing Lee, Pengfei Wang, Zhiyuan Xie
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Patent number: 8007910Abstract: A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion.Type: GrantFiled: July 19, 2007Date of Patent: August 30, 2011Assignee: City University of Hong KongInventors: Wenjun Zhang, Shuit-Tong Lee, Igor Bello, Kar Man Leung, He-qin Li, You-Shen Zou, Yat Ming Chong, Kwok Leung Ma
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Publication number: 20100314558Abstract: A luminescent system includes a layer of donor material, an acceptor material and a barrier layer therebetween. The energy transfer between the donor and acceptor is biased to the acceptor layer, by an asymmetric energy transfer efficiency created by the barrier layer. Energy from the donor material is converted into photo-luminescence in the acceptor layer by discouraging photo-luminescence quenching caused by energy backflow.Type: ApplicationFiled: August 14, 2008Publication date: December 16, 2010Applicant: CITY UNIVERSITY OF HONG KONGInventors: Shuit Tong LEE, Dorothy Duoduo MA
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Publication number: 20100190661Abstract: A surface-enhanced Raman spectroscopy (SERS)—active structure for use in Raman scattering detection has an array of nanostructures formed on a substrate by deposition and chemical etching. The nanostructures are coated with metal nanoparticles.Type: ApplicationFiled: January 26, 2009Publication date: July 29, 2010Applicant: CITY UNIVERSITY OF HONG KONGInventors: Shuit-Tong Lee, Ning Bew Wong, Ming-Liang Zhang, Meng-Su Yang, Ming-Wang Shao
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Publication number: 20100148662Abstract: An electroluminescence device has an anode, a cathode and an emitting layer located between the anode and the cathode. The emitting layer contains a compound selected from a group consisting of neutral red and its derivatives.Type: ApplicationFiled: December 17, 2008Publication date: June 17, 2010Applicant: CITY UNIVERSITY OF HONG KONGInventors: Shuit-Tong Lee, Chun Sing Lee, Pengfei Wang, Zhiyuan Xie
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Publication number: 20100093171Abstract: A conical structure of cubic Boron Nitride (cBN) is formed on a diamond layered substrate. A method of forming the cBN structure includes steps of (a) forming diamond nuclei on a substrate, (b) growing a layer of diamond film on the substrate, (c) depositing a cBN film on said diamond layer, (d) pre-depositing nanoscale etching masks on the the cBN film, and (e) etching the the deposited cBN film. In particular, though not exclusively, the cubic Boron Nitride structure has great potential applications in probe analytical and testing techniques including scanning probe microscopy (SPM) and nanoindentation, nanomechanics and nanomachining in progressing microelectromechanical system (MEMS) and nanoelectyromechanical system (NEMS) devices, field electron emission, vacuum microelectronic devices, sensors and different electrode systems including those used in electrochemistry.Type: ApplicationFiled: October 14, 2008Publication date: April 15, 2010Applicant: CITY UNIVERSITY OF HONG KONGInventors: Wen-Jun Zhang, Igor Bello, Shuit-Tong Lee, You-Sheng Zou, Yat Ming Chong, Qing Ye
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Patent number: 7645513Abstract: Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation.Type: GrantFiled: August 19, 2005Date of Patent: January 12, 2010Assignee: City University of Hong KongInventors: Igor Bello, Wenjun Zhang, Shuit-Tong Lee
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Publication number: 20090233445Abstract: A method for fabricating diamond nanopillars includes forming a diamond film on a substrate, depositing a metal mask layer on the diamond film, and etching the diamond film coated with the metal mask layer to form diamond nanopillars below the mask layer. The method may also comprise forming diamond nuclei on the substrate prior to forming the diamond film. Typically, a semiconductor substrate, an insulating substrate, a metal substrate, or an alloy substrate is used.Type: ApplicationFiled: March 12, 2008Publication date: September 17, 2009Applicant: CITY UNIVERSITY OF HONG KONGInventors: Shuit-Tong Lee, Wenjun Zhang, Igor Bello, You-Sheng Zou
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Patent number: 7579759Abstract: A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.Type: GrantFiled: June 11, 2007Date of Patent: August 25, 2009Assignee: City University of Hong KongInventors: Shuit-Tong Lee, Wen-Jun Zhang, You-Sheng Zou, Igor Bello, Kwok Leung Ma, Kar Man Leung, Yat Ming Chong
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Publication number: 20090201496Abstract: The present invention relates to an arrangement of nanomaterials which act as a substrate for a surface-enhanced Raman scattering. A method of Raman scattering and a method of manufacturing the substrate are also disclosed. The substrate comprises a plurality of nanostructures, for example nanowires, and metal nanoparticles are arranged on the surface of the nanostructures. The metal nanoparticles are of a material selected from the group comprising Au, Ag, Cu, Fe, Co, Ni, Ru, Rh, Pd, Pt or an alloy. This nano-on-nano arrangement increase the surface area and provides a significant increase in detection sensitivity. A substrate comprising a nanomaterial substrate form of a plurality of nanostructure of a noble metal and noble metal nanoparticles of a different material on the surface of said nanostructure is also disclosed.Type: ApplicationFiled: April 21, 2008Publication date: August 13, 2009Inventors: Shuit-Tong Lee, Ning Bew Wong, Mingwang Shao, Mingliang Zhang
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Publication number: 20090102356Abstract: Disclosed herein are several organic compounds having electron-transporting and/or hole-blocking performance and their preparation method and use and the OLEDs comprising the organic compound. The organic compounds exhibit high ionization potential (IP), electron affinity (Ea), glass transition temperature (Tg) and high electron mobility, and are a kind of good electron-transporting material with good hole-blocking ability. The devices comprising these compounds as one of the emitting layer, electron-transporting layer (ETL) and hole-blocking layer (HBL) show improved efficiency and better color purity.Type: ApplicationFiled: October 15, 2008Publication date: April 23, 2009Applicant: Technical Institute Of Physics And Chemistry Of Chinese Academy Of SciencesInventors: PengFei WANG, Na LI, Weimin LIU, Shuit-Tong LEE, Chun-Sing Lee
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Publication number: 20090021161Abstract: A simple and efficient method of increasing conductivity of the fluorocarbon film is disclosed. By illuminating the fluorocarbon film under ultraviolet light (UV-CFx), the film conductivity can be increased by five orders of magnitude. Devices using such a UV-treated, conductive fluorocarbon film as a buffer layer give much better performance in terms of lower operational voltage and enhanced operational stability. The improved smoothness and lowered hole injection barrier height with UV-CFx are responsible for the enhanced performance of electroluminescent devices.Type: ApplicationFiled: September 30, 2008Publication date: January 22, 2009Applicant: City University of Hong KongInventors: Chun Sing LEE, Shuit-Tong LEE, Shi Wun TONG, Yeshayahu LIFSHITZ
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Publication number: 20090022969Abstract: A multilayer coating (MLC) is composed of two chemically different layered nanocrystalline materials, nanodiamond (nanoD) and nano-cubic boron nitride (nono-cBN). The structure of the MLC and fabrication sequence of layered structure are disclosed. The base layer is preferably nanoD and is the first deposited layer serving as an accommodation layer on a pretreated substrate. It can be designed with a larger thickness whereas subsequent alternate nano-cBN and nanoD layers are typically prepared with a thickness of 2 to 100 nm. The thickness of these layers can be engineered for a specific use. The deposition of the nanoD layer, by either cold or thermal plasma CVD, is preceded by diamond nucleation on a pretreated and/or precoated substrate, which has the capacity to accommodate the MLC and provides excellent adhesion.Type: ApplicationFiled: July 19, 2007Publication date: January 22, 2009Applicant: City University of Hong KongInventors: Wenjun Zhang, Shuit-Tong Lee, Igor Bello, Kar Man Leung, He-qin Li, You-Shen Zou, Yat Ming Chong, Kwok Leung Ma