Patents by Inventor Shuiyan Huang

Shuiyan Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8193089
    Abstract: Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier layers within a recess using atomic layer deposition. The recess is then filled with tungsten using chemical vapor deposition.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: June 5, 2012
    Assignee: Seagate Technology LLC
    Inventors: Antoine Khoueir, Yongchul Ahn, Peter Nicholas Manos, Shuiyan Huang, Ivan Petrov Ivanov