Abstract: A flexible printed wiring board according to an aspect includes a base film, a conductive pattern disposed on one surface of the base film, and an extra length absorbing portion protruding from the base film and disposed in a direction of a plane, the extra length absorbing portion including a pattern connected portion connected to the conductive pattern, a coupling portion having a first linear wiring portion, a first arcuate wiring portion, and a second linear wiring portion coupled in this order continuously from the pattern connected portion, and a connecting terminal connected to the coupling portion, the pattern connected portion and the connecting terminal being opposite to each other in a direction in which the extra length absorbing portion protrudes.

Abstract: A ballast water treatment system includes an ultraviolet irradiation device which irradiates ballast water flowing through a treatment line (a pipe) with ultraviolet rays, and a control unit. The ultraviolet irradiation device includes a light source which emits ultraviolet rays, and an illuminance sensor sensing an illuminance of ultraviolet rays received by the ballast water. The control unit controls the ultraviolet irradiation device to maintain at a prescribed dose a dose calculated using an illuminance sensed by the illuminance sensor and a flow rate of ballast water which flows through the ultraviolet irradiation device. When the sensed dose cannot be maintained at the prescribed dose by controlling the ultraviolet irradiation device, the control unit reduces a treatment flow rate of the ballast water which flows through the treatment line.

Abstract: The separation membrane for seawater desalination pretreatment is a separation membrane for seawater desalination pretreatment used in pretreatment for seawater desalination with a reverse osmosis membrane, wherein a standard flux A is 2 m/d or more, which is defined as a maximum value of a flux that can satisfy P2?1.5×P1 where P1 and P2 represent an average intermembrane differential pressure, and a saccharide removal rate B or a granular carbon removal rate C expressed by a prescribed equation is 0.3 or more, and desirably 0.5 or more.

Abstract: A method of manufacturing a superconducting thin film material includes a vapor phase step of forming a superconducting layer by a vapor phase method and a liquid phase step of forming a superconducting layer by a liquid phase method so that the latter superconducting layer is in contact with the former superconducting layer. Preferably, the method further includes the step of forming an intermediate layer between the former superconducting layer and a metal substrate. The metal substrate is made of a metal, and preferably the intermediate layer is made of an oxide having a crystal structure of any of rock type, perovskite type and pyrochlore type, and the former superconducting layer and the latter superconducting layer both have an RE123 composition. Accordingly, the critical current value can be improved.

Abstract: There is provided a water treatment apparatus, including: first membrane filtration means in which a filtration membrane having an average pore diameter of 1 ?m or more is used; second membrane filtration means for treating water filtered by the first membrane filtration means, by using a microfiltration membrane or ultrafiltration membrane; and reverse osmosis membrane filtration means for treating water filtered by the second membrane filtration means. In particular, there is provided a water treatment apparatus, wherein a hydrophobic polymer membrane that is not subjected to hydrophilicizing processing is used as the filtration membrane having an average pore diameter of 1 ?m or more. There is also provided a water treatment method that can be implemented by these water treatment apparatuses.

Abstract: There is provided a cleaning method for a hydrophobic filtration membrane used for membrane filtration of water to be treated such as seawater, discharged water and ballast water including a jelly-like suspended substance and clogged with the suspended substance in the water to be treated, the filtration membrane being brought into contact with limonene-containing water, or backwashing of the filtration membrane with a cleaning liquid being done, and then, a flow having air taken therein being applied onto a surface of the filtration membrane or a water stream from an eductor nozzle being sprayed onto the filtration membrane. There is also provided a membrane filtration apparatus capable of efficiently performing the above-mentioned cleaning method.

Abstract: A superconducting thin film material that can realize attainment of an excellent property such as a high JC and a high IC and reduction of costs at the same time includes an orientated metal substrate and an oxide superconductor film formed on the orientated metal substrate. The oxide superconductor film includes a physical vapor deposition HoBCO layer formed by a physical vapor deposition method, and a metal organic deposition HoBCO layer formed on the physical vapor deposition HoBCO layer by a metal organic deposition method.

Abstract: A superconducting thin film material is provided, including a first superconducting thin film having a surface subjected to smoothing and a second superconducting thin film formed on the surface of the first superconducting thin film subjected to the smoothing. Further, a superconducting wire is provided, including a substrate, an intermediate layer formed on the substrate, and a superconducting layer formed on the intermediate layer, wherein the superconducting layer is made of the superconducting thin film material described above. Furthermore, a method of manufacturing the superconducting thin film material and a method of manufacturing the superconducting wire are provided.

Abstract: A superconductive thin film material which achieves good superconductivity by preventing an element diffusion reaction and a manufacturing method of the superconductive thin film material are provided. A superconductive thin film material is provided with a substrate, an intermediate layer with one layer or at least two layers formed on the substrate, and a superconductive layer formed on the intermediate layer. The intermediate layer has a thickness of not less than 0.4 ?m. The material for forming the intermediate layer is preferably oxide having a crystal structure, which is at least one of a halite type, a fluorite type, a perovskite type, and a pyrochlore type.

Abstract: A method of manufacturing a superconducting thin film material includes a vapor phase step of forming a superconducting layer by a vapor phase method and a liquid phase step of forming a superconducting layer by a liquid phase method so that the latter superconducting layer is in contact with the former superconducting layer. Preferably, the method further includes the step of forming an intermediate layer between the former superconducting layer and a metal substrate. The metal substrate is made of a metal, and preferably the intermediate layer is made of an oxide having a crystal structure of any of rock type, perovskite type and pyrochlore type, and the former superconducting layer and the latter superconducting layer both have an RE123 composition. Accordingly, the critical current value can be improved.

Abstract: A method of manufacturing a superconducting thin film material includes the step of forming an intermediate layer, the step of forming one superconducting layer to be in contact with the intermediate layer and the step of forming another superconducting layer by a vapor phase method to be in contact with the one superconducting layer. Between the step of forming the intermediate layer and the step of forming the one superconducting layer, the intermediate layer is kept in a reduced water vapor ambient or reduced carbon dioxide ambient or, between the step of forming one superconducting layer and the step of forming another superconducting layer, the one superconducting layer is kept in a reduced water vapor ambient or reduced carbon dioxide ambient. Thus, the critical current value can be improved.

Abstract: A superconducting thin film material that can realize attainment of an excellent property such as a high JC and a high IC and reduction of costs at the same time includes an orientated metal substrate and an oxide superconductor film formed on the orientated metal substrate. The oxide superconductor film includes a physical vapor deposition HoBCO layer formed by a physical vapor deposition method, and a metal organic deposition HoBCO layer formed on the physical vapor deposition HoBCO layer by a metal organic deposition method.

Abstract: A superconductor and a method for producing the same are provided. The method for producing a superconductor includes the step of forming a superconducting layer on a base layer by performing a film deposition at least three times, wherein the film thickness of a superconducting film in each film deposition is 0.3 ?m or less. In such a case, even when the layer thickness of the superconducting layer is increased, the decrease in the Jc is suppressed and the Ic is increased.

Abstract: A thin film material and a method of manufacturing the thin film material are obtained with which properties of films formed on a substrate can be improved. A superconducting wire 1 includes a substrate 2, an intermediate thin film layer (intermediate layer 3) formed on the substrate and comprised of one layer or at least two layers, and a single-crystal thin film layer (superconducting layer 4) formed on the intermediate thin film layer (intermediate layer 3). An upper surface (ground surface 10) that is the upper surface of at least one layer of the intermediate thin film layer (intermediate layer 3) and is opposite to the single-crystal thin film layer (superconducting layer 4) is ground.

Abstract: A method of manufacturing an oxide superconductive wire includes the step of positioning a metal tape in a position at a distance (L) of at most 100 mm from a target for generating an oxide, and the step of forming an oxide superconductive layer on the metal tape using a vapor deposition method while transferring the metal tape at a transfer speed of at least 5 m/h with keeping the distance (L) between the metal tape and the target of at most 100 mm.

Abstract: A superconducting wire formed of a metal substrate and an overlying superconducting layer, the metal substrate being a textured metal substrate and planarized to have a surface layer extending from a surface thereof to a depth of 300 nm with a crystal axis offset relative to an orientation axis by at most 25° and a surface roughness RP-V of at most 150 nm, and a method of producing the wire. The surface layer's biaxial texture can be maintained while the substrate can have a surface planarized, and a highly superconductive wire and achieve a method of producing the same can thus be achieved.

Abstract: A superconductor and a method for producing the same are provided. The method for producing a superconductor includes the step of forming a superconducting layer on a base layer by performing a film deposition at least three times, wherein the film thickness of a superconducting film in each film deposition is 0.3 ?m or less. In such a case, even when the layer thickness of the superconducting layer is increased, the decrease in the Jc is suppressed and the Ic is increased.

Abstract: Provided is a method of producing an oxide superconducting film on a single-crystal substrate by depositing, on the single-crystal substrate, substances scattered from a raw material due to irradiation with laser beams according to a pulsed-laser deposition method, wherein the irradiation of the raw material is performed in a manner such that the repetition frequency of the pulse irradiation of the laser beams is divided into at least two steps. Thus, an oxide superconducting film having a high critical current density can be produced by the method.

Abstract: A film deposition method and apparatus capable of forming a film on a substrate having a large area are provided. The film deposition method of forming a film by scattering a deposition material from a surface of a target material (14) and depositing the scattered deposition material onto a surface of a substrate (12), comprising a step of arranging the substrate (12) and the target material (14) such that the surface of the substrate (12) forms an angle to the surface of the target material (14), and a deposition step of forming the film on the substrate (12) in such a manner that an area of a film surface is continuously increased in a two-dimensional direction, while moving a relative position of the substrate (12) with respect to the target material (14).

Abstract: An oxide superconducting stranded wire having inter-strand insulation and high critical current is provided. A wire including an oxide superconducting material and a matrix covering the material and consisting essentially of silver or a silver alloy is coated with a paint containing, as a main component, an organometallic polymer such as a silicone polymer or aluminum primary phosphorus in a paint reservoir, and the paint is baked in a baking furnace via a drying furnace. A plurality of such wires with the baked paint are twined into a stranded wire, which is then heated up to a temperature necessary for sintering the oxide superconducting material. The stranded wire thus obtained through the step of sintering may have high critical current. A heat-resisting insulating coating layer may be formed by baking the paint.